公开(公告)号：US08723192B2

公开(公告)日：2014-05-13

申请号：US13320304

申请日：2010-07-19

申请人： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

发明人： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC分类号： H01L29/18

CPC分类号： H01L33/0079 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

摘要： A method for producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier; shaping a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body covers all side areas of the at least one optoelectronic semiconductor chip, and wherein a surface facing away from the carrier at the top side and/or a surface facing the carrier at the underside of the at least one semiconductor chip remains substantially free of the shaped body or is exposed, and removing the carrier.

摘要翻译： 一种光电子半导体部件的制造方法，包括提供载体; 在载体的顶侧布置至少一个光电子半导体芯片; 在所述至少一个光电半导体芯片周围成形成形体，其中所述成形体覆盖所述至少一个光电半导体芯片的所有侧面区域，并且其中，在顶侧处背离所述载体的表面和/或面向所述至少一个光电半导体芯片的表面 在至少一个半导体芯片的下侧的载体保持基本上没有成形体或暴露，并且移除载体。

公开(公告)号：US20130193470A1

公开(公告)日：2013-08-01

申请号：US13816196

申请日：2011-08-10

申请人： Karl Weidner ,  Johann Ramchen ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Gertrud Kraeuter

发明人： Karl Weidner ,  Johann Ramchen ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Gertrud Kraeuter

IPC分类号： H01L33/44 ,  H01L33/00

CPC分类号： H01L33/44 ,  H01L23/29 ,  H01L24/24 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2924/00

摘要： An optoelectronic component includes a protective layer including a material containing hydrophobic groups. Furthermore, a method is described, by means of which an optoelectronic component can be produced, and in which a protective layer including hydrophobic groups is applied.

摘要翻译： 光电子部件包括包含含有疏水基团的材料的保护层。 此外，描述了可以产生光电子部件并且其中施加包括疏水基团的保护层的方法。

公开(公告)号：US20120228666A1

公开(公告)日：2012-09-13

申请号：US13496805

申请日：2010-09-06

申请人： Karl Weidner ,  Matthias Rebhan ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann

发明人： Karl Weidner ,  Matthias Rebhan ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann

IPC分类号： H01L33/36

CPC分类号： H01L33/44 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/24

摘要： An optoelectronic module has at least one carrier with at least one contact location. A semiconductor chip emitting radiation includes a first contact surface and a second contact surface. An electrically insulating layer has a first and a second recess. The first contact surface is disposed on the side of the semiconductor chip emitting radiation facing away from the carrier. The electrically insulating layer is applied at least in places to the carrier. The semiconductor chip includes the first recess in the area of the first contact surface and the second recess in the area of the contact location. A electrically conductive conductor structure is disposed on the electrically insulating layer. The first contact surface electrically contacts the contact location of the carrier. The electrically insulating layer is formed predominately from a ceramic material.

摘要翻译： 光电子模块具有至少一个具有至少一个接触位置的载体。 发射辐射的半导体芯片包括第一接触表面和第二接触表面。 电绝缘层具有第一和第二凹部。 第一接触表面设置在半导体芯片发射背离载体的辐射的一侧。 电绝缘层至少施加到载体的位置。 半导体芯片包括在第一接触表面的区域中的第一凹部和在接触位置的区域中的第二凹部。 导电导体结构设置在电绝缘层上。 第一接触表面电接触载体的接触位置。 电绝缘层主要由陶瓷材料形成。

公开(公告)号：US20100276722A1

公开(公告)日：2010-11-04

申请号：US12678363

申请日：2008-09-24

申请人： Elmar Baur ,  Walter Wegleiter

发明人： Elmar Baur ,  Walter Wegleiter

IPC分类号： H01L33/62 ,  H01L21/50

CPC分类号： H01L24/82 ,  H01L24/24 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/24051 ,  H01L2224/24998 ,  H01L2224/82007 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

摘要翻译： 指定具有对于许多常见应用不是最佳的接触层的半导体芯片。 例如，接触层太薄而不能耐受半导体芯片的工作电流，而不会有相当大的劣化。 还规定了可以集成半导体芯片的光电子部件，从而补偿接触层的次优质量。 在部件中，半导体芯片被施加到载体主体，使得接触层布置在半导体主体的远离载体主体的一侧。 半导体芯片和载体主体至少部分地被电绝缘层覆盖，并且施加到隔离层的电导体横向延伸离开半导体本体并且接触接触层的至少部分表面。 此外，规定了制造组件的有利方法。

公开(公告)号：US07435605B2

公开(公告)日：2008-10-14

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20070264740A1

公开(公告)日：2007-11-15

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US4929300A

公开(公告)日：1990-05-29

申请号：US389451

申请日：1989-08-04

申请人： Walter Wegleiter

发明人： Walter Wegleiter

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L21/78 ,  H01L21/3043 ,  H01L27/156 ,  H01L33/005 ,  H01L33/0062

摘要： LED chip arrangements fabricated monolithically on a semiconductor substrate wafer are to be separated from one another by scribing in such a way that they can be properly arrayed to obtain a tight image-dot grid over several LED chip arrangements. The metallization of the back side of the semiconductor substrate wafer is exposed in the area of a prescribed separation track. Prior to the separation, a depression is etched into the back side of the semiconductor substrate wafer.The process according to the invention is particularly useful in the manufacture of high-resolution LED arrays.

摘要翻译： 在半导体衬底晶片上单片地制造的LED芯片布置将通过划线彼此分离，使得它们可以被适当地排列以在几个LED芯片布置上获得紧密的图像点格栅。 半导体衬底晶片的背面的金属化在规定的分离轨道的区域中露出。 在分离之前，凹陷被蚀刻到半导体衬底晶片的背面。 根据本发明的方法在制造高分辨率LED阵列方面特别有用。

公开(公告)号：US20130214323A1

公开(公告)日：2013-08-22

申请号：US13816839

申请日：2011-08-12

申请人： Karl Weidner ,  Hans Wulkesch ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Johann Ramchen

发明人： Karl Weidner ,  Hans Wulkesch ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Johann Ramchen

IPC分类号： H01L31/0232 ,  H01L33/48

CPC分类号： H01L31/0232 ,  H01L21/76804 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0095 ,  H01L33/48 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0066 ,  H01L2224/82 ,  H01L2924/00

摘要： A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

摘要翻译： 制造光电子半导体部件的方法包括提供具有顶侧，与顶侧相对设置的下侧以及沿横向彼此并排布置的多个连接区域的载体; 施加在顶侧沿横向彼此一定距离地布置的多个光电子部件，所述部件具有背离载体的接触区域; 将保护元件施加到触点和连接区域; 将电绝缘层施加到载体，接触区域和保护元件的暴露位置; 通过去除保护元件在绝缘层中产生开口; 以及在所述绝缘层和所述开口中布置导电材料，其中所述导电材料将接触区域连接到所分配的连接区域。

公开(公告)号：US20110309377A1

公开(公告)日：2011-12-22

申请号：US13121128

申请日：2009-08-25

申请人： Bert Braune ,  Jörg Erich Sorg ,  Walter Wegleiter ,  Karl Weidner ,  Oliver Wutz

发明人： Bert Braune ,  Jörg Erich Sorg ,  Walter Wegleiter ,  Karl Weidner ,  Oliver Wutz

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L2224/24105 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4). One of the conductive structures (8) electrically conductively connects at least the first contact area (21) of a radiation-emitting semiconductor component (2) to a further first contact area (21) of a further radiation-emitting semiconductor component (2) or to a conductor track of the carrier substrate (1). Furthermore, a method for producing such a module is specified.

摘要翻译： 规定了光电子模块，其包括载体衬底（1）和多个辐射发射半导体部件（2）。 载体基板（1）包括结构化的导体轨道。 辐射发射半导体部件（2）各自包括适于产生电磁辐射的有源层（2a），第一接触区域（21）和第二接触区域（22），其中第一接触区域（21）在每个 辐射发射半导体部件（2）的远离载体基板（1）的那一侧的情况。 辐射发射半导体部件（2）设置有电绝缘层（4），其在每种情况下在第一接触区域（21）的区域中具有切口。 导电结构（8）布置在电绝缘层（4）上的区域中。 导电结构（8）中的一个导电地将辐射发射半导体部件（2）的至少第一接触区域（21）导电连接到另外的辐射发射半导体部件（2）的另外的第一接触区域（21） 或载体衬底（1）的导体轨道。 此外，规定了这种模块的制造方法。

公开(公告)号：US07932526B2

公开(公告)日：2011-04-26

申请号：US12087293

申请日：2006-12-13

申请人： Reiner Windisch ,  Günther Grönninger ,  Peter Heidborn ,  Christian Jung ,  Walter Wegleiter

发明人： Reiner Windisch ,  Günther Grönninger ,  Peter Heidborn ,  Christian Jung ,  Walter Wegleiter

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L25/0756 ,  H01L33/0016 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

摘要： An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction.

摘要翻译： 一种LED半导体本体，包括第一辐射生成有源层和第二辐射生成有源层，所述第一有源层和所述第二有源层在垂直方向上彼此上下布置。