公开(公告)号：US5423945A

公开(公告)日：1995-06-13

申请号：US941501

申请日：1992-09-08

申请人： Jeffrey Marks ,  Kenneth S. Collins ,  Chan-Lon Yang ,  David W. Groechel ,  Peter R. Keswick

发明人： Jeffrey Marks ,  Kenneth S. Collins ,  Chan-Lon Yang ,  David W. Groechel ,  Peter R. Keswick

IPC分类号： C23C16/30 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46 ,  H01L21/00

CPC分类号： H01J37/32871 ,  H01J37/32082 ,  H01J37/321 ,  H01L21/31116 ,  H05H1/46 ,  H01J2237/334 ,  H01J2237/3346 ,  H01J2237/3347

摘要： A method of etching an oxide over a nitride with high selectivity comprising plasma etching the oxide with a carbon and fluorine-containing etchant gas in the presence of a scavenger for fluorine, thereby forming a carbon-rich polymer which passivates the nitride. This polymer is inert to the plasma etch gases and thus provides high selectivity to the etch process.

摘要翻译： 一种以高选择性蚀刻氮化物上的氧化物的方法，包括在氟清除剂的存在下用含碳和含氟蚀刻剂气体等离子体蚀刻氧化物，从而形成钝化氮化物的富碳聚合物。 该聚合物对等离子体蚀刻气体是惰性的，因此为蚀刻工艺提供高选择性。

公开(公告)号：US20240304456A1

公开(公告)日：2024-09-12

申请号：US18026171

申请日：2022-03-07

申请人： Hitachi High-Tech Corporation

发明人： Koichi TAKASAKI ,  Makoto MIURA ,  Makoto SATAKE

IPC分类号： H01L21/3213 ,  H01J37/32 ,  H01L29/423

CPC分类号： H01L21/32136 ,  H01J37/3211 ,  H01J37/32651 ,  H01J2237/3341 ,  H01J2237/3346 ,  H01L29/42392

摘要： An object of the present invention is to provide a highly controllable plasma processing method capable of selectively removing a metal-containing layer. In the plasma processing method for plasma etching a metal-containing film formed on a formed pattern and covered with a carbon-containing film, after the carbon-containing film is removed, the metal-containing film is removed by etching with radicals generated from plasma.

公开(公告)号：US20240234163A1

公开(公告)日：2024-07-11

申请号：US18410031

申请日：2024-01-11

申请人： Tokyo Electron Limited

发明人： Shoi SUZUKI ,  Taku GOHIRA

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/033

CPC分类号： H01L21/31144 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01J37/32724 ,  H01J2237/3346

摘要： An etching method includes providing a substrate including a first region and a second region below the first region, the first region containing a first material and having an opening, and the second region containing a second material different from the first material, and etching the second region through the opening while forming a carbon-containing layer and a metal-containing layer below the carbon-containing layer on a sidewall of the opening, by supplying, onto the substrate, plasma generated from a processing gas containing a carbon-containing gas, a metal halide gas, and a halogen scavenging gas that scavenges halogen.

公开(公告)号：US20240162047A1

公开(公告)日：2024-05-16

申请号：US18422013

申请日：2024-01-25

申请人： Tokyo Electron Limited

发明人： Takahiro YOKOYAMA ,  Masafumi URAKAWA ,  Yuki CHIBA

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/033

CPC分类号： H01L21/31144 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32926 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01J2237/3346

摘要： An etching method includes providing a substrate including an etching target layer including a silicon-containing layer, and a mask located on the etching target layer, comprising a metal, and having an opening defined by a side wall of the mask, supplying a process gas including a metal-containing gas, and etching, with plasma generated from the process gas, the etching target layer through the opening while forming a protective layer comprising a metal on a top of the mask and on the side wall of the mask.

公开(公告)号：US20240120181A1

公开(公告)日：2024-04-11

申请号：US17961335

申请日：2022-10-06

申请人： Tokyo Electron Limited

发明人： Sergey Voronin ,  Qi Wang

IPC分类号： H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32715 ,  H01L21/6831 ,  H01J37/321 ,  H01J2237/3346

摘要： A method of plasma processing includes delivering direct current voltage to a substrate holder including an upper side configured to support a substrate disposed within a plasma processing chamber. The upper side is divided into a plurality of zones by a plurality of conductors electrically isolated from each other. The method further includes pulsing the direct current voltage as first direct current pulses to a first conductor of the plurality of conductors using first pulse parameters, and pulsing the direct current voltage as second direct current pulses to a second conductor of the plurality of conductors using second pulse parameters that are different from the first pulse parameters. The direct current voltage is pulsed to the second conductor while pulsing the direct current voltage to the first conductor.

公开(公告)号：US20240038546A1

公开(公告)日：2024-02-01

申请号：US18012445

申请日：2021-06-24

申请人： SHOWA DENKO K.K.

发明人： Kazuma MATSUI ,  Yuki OKA

IPC分类号： H01L21/3213 ,  H01J37/32 ,  G03F7/36 ,  C09K13/00

CPC分类号： H01L21/32136 ,  H01J37/32422 ,  G03F7/36 ,  C09K13/00 ,  H01J2237/3346

摘要： There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

公开(公告)号：US20230290643A1

公开(公告)日：2023-09-14

申请号：US18009300

申请日：2021-05-27

申请人： SHOWA DENKO K.K.

发明人： Kazuma MATSUI

IPC分类号： H01L21/311 ,  H01J37/32 ,  C09K13/00

CPC分类号： H01L21/31116 ,  C09K13/00 ,  H01J37/32816 ,  H01J2237/3346

摘要： An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol% or more to 40 vol% or less, and the etching target has silicon nitride.

公开(公告)号：US20230215699A1

公开(公告)日：2023-07-06

申请号：US18079142

申请日：2022-12-12

申请人： SEMES CO., LTD.

发明人： Myoungsub NOH ,  Seong Gil LEE ,  Dong-Hun KIM ,  Dong Sub OH ,  Jountaek KOO ,  Wan Jae PARK

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32834 ,  H01J37/32082 ,  H01J2237/3346 ,  H01J2237/3341

摘要： According to one aspect of the present invention, a method of treating a substrate within a chamber includes performing a unit cycle at least one time, in which the unit cycle includes a substrate treatment step of supplying a reaction gas in which radicals constituting plasma of a first treatment gas are mixed with a second treatment gas onto the substrate, wherein the substrate includes a first thin film, and a second thin film having a lower reactivity to the reaction gas than the first thin film.

公开(公告)号：US20170207099A1

公开(公告)日：2017-07-20

申请号：US15411241

申请日：2017-01-20

申请人： Tokyo Electron Limited

发明人： Hiroto Ohtake ,  Takuya Mori

IPC分类号： H01L21/306 ,  H01J37/32

CPC分类号： H01L21/30621 ,  H01J37/32146 ,  H01J37/32183 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/3464 ,  H01J2237/3346 ,  H01L21/3065

摘要： A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.

公开(公告)号：US20160211151A1

公开(公告)日：2016-07-21

申请号：US15005981

申请日：2013-07-26

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yasutoshi TSUBOTA ,  Yuichi WADA ,  Kenji KAMEDA ,  Shin HIYAMA

IPC分类号： H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/32135 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L27/10852

摘要： Etching having high selectivity is performed within a plane of a substrate. To this end, a substrate processing apparatus includes a substrate support where a substrate including a first film containing at least silicon and a second film having a silicon content ratio lower than that of the first film is placed; a process chamber wherein the substrate support is disposed; a gas supply system configured to supply an etching gas to the substrate; a coolant channel disposed in the substrate support and having a coolant flowing therein; a coolant flow rate controller configured to control a flow rate of the coolant supplied to the coolant channel; a control unit configured to control at least the coolant flow rate controller such that a temperature of the substrate is maintained whereat an etch rate of the first film is higher than that of the second film while the etching gas is in contact with the substrate; and an exhaust system configured to exhaust an inner atmosphere of the process chamber.

摘要翻译： 在基板的平面内进行具有高选择性的蚀刻。 为此，衬底处理设备包括：衬底支撑体，其中放置包括至少含有硅的第一膜的衬底和具有低于第一膜的硅含量比的第二膜; 处理室，其中设置所述衬底支撑件; 气体供给系统，其构造成向所述基板供给蚀刻气体; 冷却剂通道，其设置在所述基板支撑件中并且具有在其中流动的冷却剂; 冷却剂流量控制器，被配置为控制供应到冷却剂通道的冷却剂的流量; 控制单元，被配置为至少控制所述冷却剂流量控制器，使得在所述蚀刻气体与所述基板接触的同时保持所述第一膜的蚀刻速率高于所述第二膜的蚀刻速率的基板的温度; 以及构造成排出处理室的内部气氛的排气系统。