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    Semiconductor optical device
    11.
    发明申请
    Semiconductor optical device 有权
    半导体光学器件

    公开(公告)号：US20090219967A1

    公开(公告)日：2009-09-03

    申请号：US12320438

    申请日：2009-01-26

    申请人： Jun-ichi Hashimoto

    发明人： Jun-ichi Hashimoto

    IPC分类号： H01S5/125

    CPC分类号： H01S5/2202 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/2231 ,  H01S2302/00

    摘要： To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate. This can avoid the substrate-mode excitation, thereby suppressing its resulting laser characteristic deteriorations such as destabilization of oscillation wavelengths.

    摘要翻译： 为了提供能够抑制激光特性在基板模式中被激励而劣化的半导体光学器件，并且可以减少制造步骤的数量。 半导体光学器件包括设置在半导体衬底上的第一DBR层，其具有交替堆叠的第一和第二半导体层，第一覆层，有源层和第二覆层。 半导体衬底的带隙高于有源层的带隙。 第一DBR层对具有发射波长的光是透明的，而第一和第二半导体层具有彼此不同的折射率。 由于第一DBR层设置在半导体衬底和第一覆层之间，所以到达第一覆层的下端的导光（如果有的话）被第一DBR层反射，由此可以抑制光泄漏到 半导体衬底。 这可以避免衬底模式激励，从而抑制其产生的激光特性恶化，例如振荡波长的不稳定性。

    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
    14.
    发明申请
    Laser diode and semiconductor light-emitting device producing visible-wavelength radiation 有权
    产生可见光波长的激光二极管和半导体发光器件

    公开(公告)号：US20040228381A1

    公开(公告)日：2004-11-18

    申请号：US10866901

    申请日：2004-06-15

    发明人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

    IPC分类号： H01S005/00

    CPC分类号： H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

    摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

    摘要翻译： 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，形成在蚀刻阻挡层上的一对电流阻挡区域，以便在其间限定条带区域，形成在一对电流阻挡区上的覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

    Semiconductor laser device
    15.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US06414977B1

    公开(公告)日：2002-07-02

    申请号：US09828218

    申请日：2001-04-09

    申请人： Motoharu Miyashita ,  Motoko Sasaki ,  Ken-ichi Ono

    发明人： Motoharu Miyashita ,  Motoko Sasaki ,  Ken-ichi Ono

    IPC分类号： H01S500

    CPC分类号： H01S5/2202 ,  H01S5/221 ,  H01S5/2218 ,  H01S5/2231 ,  H01S5/32325

    摘要： A semiconductor laser device exhibiting a reduced threshold current with less deterioration in temperature properties in current-optical output performance and excellent beam properties. The semiconductor laser device has a current blocking layer of n-AlInP having a stripe-shaped opening disposed on a first upper cladding layer, the first upper cladding layer and the current blocking layer facing the opening respectively are covered by a buffer layer of p-Al0.7Ga0.5As and a second upper cladding layer of p-(Al0.7Ga0.3)0.5In0.5P is disposed on the buffer layer, to prevent lattice defect formation during growth of a crystalline layer on the surface of the current blocking layer facing the opening.

    摘要翻译： 一种半导体激光器件，具有降低的阈值电流，并且在电流 - 光输出性能和优异的光束性能下具有较低的温度特性劣化。 半导体激光器件具有n-AlInP的电流阻挡层，其具有设置在第一上包层上的条形开口，第一上覆层和面对开口的电流阻挡层分别被p型缓冲层覆盖， Al0.7Ga0.5As和p（Al0.7Ga0.3）0.5In0.5P的第二上包层设置在缓冲层上，以防止在电流阻塞表面上的晶体层生长期间的晶格缺陷形成 层面朝开口。

    Stripe-guide TJS laser
    18.
    发明授权
    Stripe-guide TJS laser 失效
    条纹导向TJS激光

    公开(公告)号：US4504952A

    公开(公告)日：1985-03-12

    申请号：US383778

    申请日：1982-06-01

    申请人： Robert L. Hartman ,  Louis A. Koszi ,  Bertram Schwartz

    发明人： Robert L. Hartman ,  Louis A. Koszi ,  Bertram Schwartz

    IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19 ,  H01S3/18

    CPC分类号： H01S5/2203 ,  H01S5/24 ,  H01S5/2202 ,  H01S5/2237

    摘要： A TJS light emitting diode (laser or LED) comprises an isotype double heterostructure (DH) and a V-groove which penetrates the intermediate layer of the DH. The groove is filled with a region of semiconductor material which enables carrier injection to occur from the region into the intermediate layer, or conversely, depending on the relative bandgaps of the layer and region. Real-refractive index guiding by the groove is described.

    摘要翻译： TJS发光二极管（激光或LED）包括穿透DH的中间层的同型双异质结构（DH）和V形槽。 沟槽填充有半导体材料的区域，其使载流子注入从区域发生到中间层，或相反地取决于层和区域的相对带隙。 描述了由凹槽引导的实际折射率。