公开(公告)号：US20070131159A1

公开(公告)日：2007-06-14

申请号：US11638373

申请日：2006-12-14

Applicant: Young-Pil Kim ,  Jin Kim ,  Min-Gu Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee

Inventor： Young-Pil Kim ,  Jin Kim ,  Min-Gu Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee

IPC: C30B13/00 ,  C30B19/00 ,  C30B28/08 ,  C30B23/00

CPC classification number: C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  C30B33/12

Abstract: A method for growing an epitaxial layer includes obtaining a semiconductor substrate having a plurality of insulating and conductive surfaces, adsorbing a first source gas into the plurality of conductive surfaces to grow a first epitaxial layer thereon, such that the first epitaxial layer has lateral portions overhanging the insulating surfaces, etching the first epitaxial layer to form an etched epitaxial layer, such that the etched epitaxial layer has curved surfaces, and supplying a second source gas to trigger additional epitaxial growth in the etched epitaxial layer.

Abstract translation: 一种用于生长外延层的方法包括获得具有多个绝缘和导电表面的半导体衬底，将第一源气体吸附到多个导电表面中以在其上生长第一外延层，使得第一外延层具有悬垂的侧向部分 蚀刻第一外延层以形成蚀刻的外延层，使得蚀刻的外延层具有弯曲表面，并且提供第二源气体以触发蚀刻的外延层中的另外的外延生长。

公开(公告)号：US07192481B2

公开(公告)日：2007-03-20

申请号：US10516799

申请日：2003-06-10

Applicant: Csaba Szeles ,  Kelvin G. Lynn

Inventor： Csaba Szeles ,  Kelvin G. Lynn

IPC: C30B28/08

CPC classification number: H01L31/02966 ,  C30B11/00 ,  C30B29/48 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02576 ,  H01L21/02625 ,  H01L31/0296 ,  H01L31/085 ,  H01L31/1032 ,  H01L31/1832

Abstract: A radiation detector made from a compound, or alloy, comprising CdxZn1−xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Abstract translation: 由CdxZn1-xTe（0 = x = 1）的化合物或合金制成的辐射探测器，浓度在10至10,000原子百分数之间的Pb和至少一种选自（i）Cl 和（ii）周期表第三列元素的浓度为10至10,000原子百分之十十。 辐射探测器在施加的电气偏压和优异的电荷传输下，表现出全电补偿，高电阻率，全耗尽。

公开(公告)号：US20070015069A1

公开(公告)日：2007-01-18

申请号：US11523932

申请日：2006-09-19

Applicant: Su-Gyeong Lee ,  Hyun-Jae Kim ,  Myung-Koo Kang

Inventor： Su-Gyeong Lee ,  Hyun-Jae Kim ,  Myung-Koo Kang

IPC: C30B28/02 ,  C30B28/08 ,  C30B21/04 ,  C30B5/00 ,  G03F1/00 ,  C30B13/00 ,  C30B3/00 ,  C30B1/00

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66757

Abstract: A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.

公开(公告)号：US20060174820A1

公开(公告)日：2006-08-10

申请号：US10565108

申请日：2004-07-12

Applicant: Ken Yoshizawa

Inventor： Ken Yoshizawa

IPC: C30B15/00 ,  C30B13/00 ,  C30B21/06 ,  C30B21/04 ,  C30B27/02 ,  C30B28/08 ,  C30B28/10 ,  C30B30/04

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/34

Abstract: The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free by Dash Necking method using a seed crystal having its crystal axis inclined at a specified angle from a crystal orientation , and the grown FZ silicon single crystal ingot is sliced at the just angle of a crystal orientation to produce a silicon wafer having a crystal orientation , and a silicon wafer produced by the method. Thereby, there are provided a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot made to be dislocation-free at a high success rate by using Dash Necking method by FZ method, and a silicon wafer having an crystal orientation .

Abstract translation: 本发明是一种通过浮选法生长的硅单晶锭（FZ法）制造具有晶体取向<110>的硅晶片的方法，其中至少通过以下步骤生长FZ硅单晶锭： 通过使用晶体从晶体取向<110>倾斜指定角度的晶种的Dash Necking方法使其无位错，并且将生长的FZ硅单晶锭以晶体取向< 制造晶体取向<110>的硅晶片和通过该方法制造的硅晶片。 因此，提供了一种通过使用FZ方法的Dash Necking方法从以高成功率制成无位错的硅单晶锭制造具有晶体取向<110>的硅晶片的方法，以及具有 晶体取向<110>。

公开(公告)号：US08795624B2

公开(公告)日：2014-08-05

申请号：US11663887

申请日：2005-10-05

Applicant: Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

Inventor： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Mitsuru Sawamura ,  Noboru Ohtani

IPC: C01B31/36 ,  H01L21/00 ,  B01J3/04 ,  H01B1/04 ,  H01B1/00 ,  H01L29/16 ,  H01L21/02 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: H01B1/04 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B28/08 ,  C30B29/36 ,  H01B1/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L29/1608 ,  Y10S438/931

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 Ωcm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract translation: 提供了含有掺杂剂元素的单晶碳化硅锭，其中掺杂剂元素的最大浓度小于5×10 17原子/ cm 3，最大浓度是掺杂剂元素的最小浓度的50倍或更小。 还提供了通过切割和抛光单晶碳化硅锭制成的单晶碳化硅晶片，其中晶片的室温下的电阻率为5×10 3Ω·cm以上。 还提供了一种用于制造单晶碳化硅的方法，包括通过升华法从升华材料在晶种上生长单晶碳化硅。 升华材料包括含有掺杂剂元素的固体材料，并且含有掺杂元素的固体材料的比表面积为0.5m 2 / g以下。

公开(公告)号：US08562768B2

公开(公告)日：2013-10-22

申请号：US12934885

申请日：2009-04-16

Applicant: Pierre Yvart ,  Joel Renouard ,  Helene Blanchard ,  Hugues Rocton

Inventor： Pierre Yvart ,  Joel Renouard ,  Helene Blanchard ,  Hugues Rocton

IPC: C30B13/00 ,  C30B21/04 ,  C30B28/08 ,  C30B19/00 ,  D03D23/00 ,  D03D43/00

CPC classification number: C06D5/06 ,  C01B3/065 ,  C01B6/00 ,  H01M8/0606 ,  H01M2008/1095 ,  Y02E60/324 ,  Y02E60/362 ,  Y02E60/364

Abstract: The main subject of the present invention are solid compounds capable of generating hydrogen by a self-sustaining combustion reaction. Their composition comprises borazane and/or polyaminoborane and at least one inorganic oxidant, advantageously chosen from ammonium nitrate, alkali metal nitrates, alkaline-earth metal nitrates, metal nitrates, metal oxides, oxidants of the family of dinitramines and mixtures thereof. It also relates to the generation of hydrogen by self-sustaining combustion of at least one such compound.

Abstract translation: 本发明的主要课题是能够通过自持燃烧反应产生氢的固体化合物。 它们的组成包括硼氮烷和/或聚氨基硼烷以及至少一种无机氧化剂，有利地选自硝酸铵，碱金属硝酸盐，碱土金属硝酸盐，金属硝酸盐，金属氧化物，二硝基胺族的氧化剂及其混合物。 它还涉及通过至少一种这种化合物的自维持燃烧产生氢。

公开(公告)号：US20130201634A1

公开(公告)日：2013-08-08

申请号：US13701663

申请日：2010-12-30

Applicant: James S. Im ,  Paul C. Van Der Wilt

Inventor： James S. Im ,  Paul C. Van Der Wilt

IPC: C30B28/08 ,  B23K26/067 ,  B23K26/00

CPC classification number: C30B28/08 ,  B23K26/067 ,  B23K26/354 ,  C30B1/08 ,  C30B13/24

Abstract: The disclosure relates to methods and systems for single-scan line-scan crystallization using superimposed scanning elements. In one aspect, the method includes generating a plurality of laser beam pulses from a pulsed laser source, wherein each laser beam pulse has a fluence selected to melt the thin film and, upon cooling, induce crystallization in the thin film; directing a first laser beam pulse onto a thin film using a first beam path; advancing the thin film at a constant first scan velocity in a first direction; and deflecting a second laser beam pulse from the first beam path to a second beam path using an optical scanning element such that the deflection results in the film experiencing a second scan velocity of the laser beam pulses relative to the thin film, wherein the second scan velocity is less than the first scan velocity.

Abstract translation: 本公开涉及使用叠加的扫描元件的单扫描线扫描结晶的方法和系统。 在一个方面，该方法包括从脉冲激光源产生多个激光束脉冲，其中每个激光束脉冲具有选择的能量来熔化薄膜，并且在冷却时，在薄膜中引起结晶; 使用第一光束路径将第一激光束脉冲引导到薄膜上; 以恒定的第一扫描速度沿第一方向推进薄膜; 以及使用光学扫描元件将第二激光束脉冲从第一光束路径偏转到第二光束路径，使得偏转导致膜经历相对于薄膜的激光束脉冲的第二扫描速度，其中第二扫描 速度小于第一扫描速度。

公开(公告)号：US08349080B1

公开(公告)日：2013-01-08

申请号：US12313766

申请日：2008-11-24

Applicant: John C. Price

Inventor： John C. Price

IPC: C30B35/00 ,  C30B13/28 ,  C30B15/30 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: G02B21/26 ,  G02B21/22 ,  G02B21/32 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/108

Abstract: A micro-manipulator machine for harvesting and cryofreezing crystals for cryogenic storage and subsequent analysis includes a micropositioner mechanism for converting motions manually input to a position control knob to fractionally-scaled motions of a follower mechanism which includes a tool head support arm and tool head that releasably holds a filamentary polymer cryoloop for immersion into a liquid crystal growth media and extraction of a liquid drop containing a selected crystal from the media. A first automatic actuator mechanism orbits the tool head support arm, tool head, cryoloop, liquid drop and harvested crystal from a harvesting location to a retrieval location when the micropositioner input control arm has been moved manually away from the crystal harvesting location by the operator after extracting a crystal drop, and a second automatic actuator mechanism pivots the toll head into a flowing stream of a cryogenic gas to freeze the liquid drop and crystal.

Abstract translation: 一种用于收集和冻结晶体以用于低温储存和随后分析的微操纵机器包括微定位器机构，用于将手动输入的运动转换到位置控制旋钮到从动机构的分数运动，其包括工具头支撑臂和工具头， 可释放地保持用于浸入液晶生长介质的丝状聚合物冷冻液并从介质中萃取含有选定晶体的液滴。 当微型定位器输入控制臂在操作者手动移离晶体收集位置之后，第一自动致动器机构将工具头支撑臂，工具头，冷冻液，液滴和收集的晶体从收获位置旋转到检索位置。 提取出水滴，第二自动致动器机构将收费头枢转成低温气体的流动流，以冻结液滴和晶体。

公开(公告)号：US07635414B2

公开(公告)日：2009-12-22

申请号：US10789638

申请日：2004-02-27

Applicant: David L. Bender

Inventor： David L. Bender

IPC: C30B21/06 ,  C30B11/00 ,  C30B28/08

CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B15/02 ,  C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/108 ,  Y10T117/1088 ,  Y10T117/1092

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract translation: 基于用于连续生长单晶锭的切克劳斯基方法的改进的系统包括低纵横比，大直径和基本平坦的坩埚，包括围绕晶体的可选堰。 低长宽比坩埚基本上消除了对流，并降低了成品单晶硅锭中的氧含量。 单独的水平控制的硅预熔化室向生长坩埚提供连续的熔融硅源，有利地消除了在晶体拉制过程中垂直行进和坩埚升高系统的需要。 坩埚下面的多个加热器在熔体上建立相应的热区。 加热器的热输出被单独控制，以提供跨熔体和晶体/熔融界面的最佳热分布，以改善晶体生长。 提供多个晶体拉伸室用于连续处理和高通量。

公开(公告)号：US07300858B2

公开(公告)日：2007-11-27

申请号：US10525283

申请日：2003-08-19

Applicant: James S. Im

Inventor： James S. Im

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC classification number: H01L21/02686 ,  B23K26/066 ,  B23K26/067 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/78675

Abstract: A process and system for processing a thin film sample, as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Each irradiation beam pulse may be masked to define a first plurality of beamlets and a second plurality of beamlets. The first and second plurality of beamlets of each of the irradiation pulses being provided for impinging the film sample and having an intensity which is sufficient to at least partially melt irradiated portions of the section of the film sample. A particular portion of the section of the film sample is irradiated with the first beamlets of a first pulse of the irradiated beam pulses to melt first areas of the particular portion, the first areas being at least partially melted, leaving first unirradiated regions between respective adjacent ones of the first areas, and being allowed to resolidify and crystallize. After the irradiation of the particular portion with the first beamlets, the particular portion is again irradiated with the second beamlets of a second pulse of the irradiated beam pulses to melt second areas of the particular portion, the second areas being at least partially melted, leaving second unirradiated regions between respective adjacent ones of the second areas, and being allowed to resolidify and crystallize. The first irradiated and re-solidified areas and the second irradiated and re-solidified areas are intermingled with one another within the section of the film sample. In addition, the first areas correspond to first pixels, and the second areas correspond to second pixels.

Abstract translation: 提供了一种用于处理薄膜样品的方法和系统，以及薄膜结构。 特别地，可以控制光束发生器以预定的重复率发射连续的照射光束脉冲。 每个照射束脉冲可以被掩蔽以限定第一多个子束和第二多个子束。 每个照射脉冲的第一和第二多个子束被提供用于冲击薄膜样品并且具有足以至少部分地熔化薄膜样品部分的照射部分的强度。 用所述照射束脉冲的第一脉冲的第一子束照射所述膜样品的所述部分的特定部分，以熔化所述特定部分的第一区域，所述第一区域至少部分地熔化，从而在相邻的相邻区域之间留下第一未照射区域 第一个地区，被允许重新确定和结晶。 在用第一子束照射特定部分之后，特定部分再次用照射束脉冲的第二脉冲的第二子束照射以熔化特定部分的第二区域，第二区域至少部分地熔化，留下 在相邻的相邻的第二区域之间的第二未照射区域，并被允许再凝固和结晶。 第一次照射和再固化的区域以及第二次照射和再固化的区域在膜样品的部分内彼此混合。 此外，第一区域对应于第一像素，第二区域对应于第二像素。