公开(公告)号：US09931666B2

公开(公告)日：2018-04-03

申请号：US14166275

申请日：2014-01-28

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Hong-Kyun Ahn ,  Se-Young Oh

IPC分类号： B05C21/00 ,  H01L51/00 ,  G03F1/20 ,  C23C16/04 ,  C23C14/04 ,  B05D1/32

CPC分类号： B05C21/005 ,  B05D1/32 ,  C23C14/042 ,  C23C16/042 ,  G03F1/20 ,  H01L51/0011

摘要： A mask assembly includes a frame with an opening, at least one support stick in the frame and extending in a first direction to traverse the opening of the frame, the support stick including a communication pattern above the opening of the frame, and a mask positioned on the frame and the at least one support stick, the mask extending in a second direction perpendicular to the first direction to traverse the opening of the frame, and the mask being exposed to the opening of the frame through the communication pattern.

公开(公告)号：US09927698B2

公开(公告)日：2018-03-27

申请号：US15234078

申请日：2016-08-11

申请人： GLOBALFOUNDRIES INC.

发明人： Jed H. Rankin ,  Adam C. Smith

IPC分类号： G03F1/70 ,  G03F1/78 ,  G03F1/20 ,  G03F7/20 ,  H01L21/027 ,  B82Y10/00 ,  G06F17/50 ,  B82Y40/00 ,  H01J37/317

CPC分类号： G03F1/70 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2063 ,  G03F7/7025 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01J37/3174 ,  H01L21/0274 ,  Y10S430/143

摘要： A method and system for: forming a first rectangular shape with photomask writing equipment, using a first sub-threshold dosage on a photoresist layer of a photomask substrate; forming an overlapping second rectangular shape with the photomask writing equipment using a second sub-threshold dosage on the photoresist layer, the second rectangular shape being rotated relative to the first rectangular shape to form one of: a hexagonal overlap area and an octagonal overlap area, that exposes the photoresist layer to at least a threshold dosage; and forming a photomask, based on developing the exposed photoresist layer, to provide optical transmission corresponding to the one of: the hexagonal overlap area of at least the threshold dosage and the octagonal overlap area of at least the threshold dosage, for use by a photolithography system to write any of a contact, a via, or a curvilinear shape on an integrated circuit substrate.

公开(公告)号：US09740098B2

公开(公告)日：2017-08-22

申请号：US15094348

申请日：2016-04-08

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Keiichi Masunaga ,  Satoshi Watanabe ,  Masaaki Kotake ,  Daisuke Domon ,  Takayuki Fujiwara

IPC分类号： G03F7/038 ,  G03F7/004 ,  G03F7/09 ,  G03F7/30 ,  G03F7/32 ,  G03F7/20 ,  G03F1/20 ,  G03F1/22

CPC分类号： G03F7/0045 ,  G03F1/20 ,  G03F1/22 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/09 ,  G03F7/2059 ,  G03F7/30 ,  G03F7/322

摘要： A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

公开(公告)号：US20170168382A1

公开(公告)日：2017-06-15

申请号：US15327519

申请日：2015-07-27

申请人： HOYA CORPORATION

发明人： Toru FUKUI

IPC分类号： G03F1/20 ,  G03F7/004 ,  G03F7/32 ,  G03F7/038 ,  G03F7/20

CPC分类号： G03F1/20 ,  G03F1/00 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/095 ,  G03F7/11 ,  G03F7/2037 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

摘要： A mask blank with resist film, including a substrate having a thin film; and a negative resist film formed on a main surface of the thin film, wherein in the resist film, a photoacid generator-rich region in which concentration of a photoacid generator is high compared to other region of the resist film, is formed at a portion where the resist film is in contact with the thin film.

公开(公告)号：US20170125212A1

公开(公告)日：2017-05-04

申请号：US15128713

申请日：2015-02-06

申请人： NIPPON CONTROL SYSTEM CORPORATION

发明人： Dai TSUNODA

IPC分类号： H01J37/302 ,  H01J37/317 ,  G03F1/20 ,  G03F7/20 ,  G03F1/84

CPC分类号： H01J37/3026 ,  G03F1/20 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2037 ,  G06T7/13 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/221 ,  H01J2237/28 ,  H01J2237/2817

摘要： In order to solve the problem that information indicating three or more points on a contour of a figure drawn by an electron beam writer cannot be more precisely acquired, an information processing apparatus includes: an accepting unit that accepts pattern information indicating a pattern figure, and actually observed contour information acquired using an image obtained by capturing an image of a figure drawn by an electron beam writer; a transforming information acquiring unit that acquires transforming information, which is information that minimizes the sum of squares of differences between convolution values corresponding to three or more corrected contour points of a given point spread function in a region indicated by the pattern figure indicated by the pattern information and a threshold regarding the convolution values; a corrected contour point acquiring unit that acquires corrected contour point information, which is information indicating three or more corrected contour points respectively corresponding to three or more actually observed contour points, using the transforming information; and an output unit that outputs the corrected contour point information. Accordingly, it is possible to more precisely acquire information indicating three or more points on a contour of a figure drawn by an electron beam writer.

公开(公告)号：US20170059990A1

公开(公告)日：2017-03-02

申请号：US15352662

申请日：2016-11-16

申请人： FUJIFILM Corporation

发明人： Tomotaka TSUCHIMURA

IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F1/22 ,  G03F7/16 ,  G03F1/20 ,  G03F7/32 ,  C08F212/14

CPC分类号： G03F7/0382 ,  C08F12/20 ,  C08F12/22 ,  C08F12/24 ,  C08F12/30 ,  C08F212/14 ,  C08F220/06 ,  C08F220/58 ,  C08F2220/301 ,  C08F2220/303 ,  C08F2220/382 ,  C09D125/18 ,  G03F1/20 ,  G03F1/22 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/162 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/322 ,  C08F212/32 ,  C08F244/00 ,  C08F212/08

摘要： A radiation-sensitive or actinic ray-sensitive resin composition contains a polymer compound (A) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain and a repeating unit (b) that is represented by the following Formula (I), in the formula, R3 represents a hydrogen atom, an organic group, or a halogen atom, A1 represents an aromatic ring group or an alicyclic group. R1 and R2 each independently represent an alkyl group, a cycloalkyl group, or an aryl group, at least two of A1, R1, or R2 may be bonded to each other to form a ring. B1 and L1 each independently represent a single bond or a divalent linking group, X represents a hydrogen atom or an organic group, n represents an integer of 1 or greater.

摘要翻译： 辐射敏感性或活性光敏感性树脂组合物含有具有结构部位（a）的聚合物化合物（A），其通过活性光线或辐射的照射而分解，并在侧链上产生酸性阴离子， 通式（I）表示的重复单元（b）。 在该式中，R 3表示氢原子，有机基团或卤素原子。 A1表示芳环基或脂环基。 R1和R2各自独立地表示烷基，环烷基或芳基。 A1，R1和R2中的至少两个可以结合在一起形成环。 B1和L1各自独立地表示单键或二价连接基团。 X表示氢原子或有机基团。 n表示1或更大的整数。 当n表示2以上的整数时，L1的多个实例，R1的多个实例，R2的多个实例以及X的多个实例可以彼此相同或不同。

公开(公告)号：US09530610B2

公开(公告)日：2016-12-27

申请号：US14953959

申请日：2015-11-30

申请人： NuFlare Technology, Inc. ,  NTT Advanced Technology Corporation

发明人： Kazuhiro Chiba ,  Hiroshi Matsumoto ,  Munehiro Ogasawara ,  Ryoichi Yoshikawa ,  Hirofumi Morita ,  Hirokazu Yamada ,  Teruaki Safu ,  Toshifumi Konishi ,  Takaaki Matsushima ,  Kazuhisa Kudo ,  Masaki Yano ,  Katsuyuki Machida

IPC分类号： H01J37/04 ,  H01J37/09 ,  G03F1/20

CPC分类号： H01J37/045 ,  H01J2237/043 ,  H01J2237/0432 ,  H01J2237/0437 ,  H01J2237/303 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.

摘要翻译： 一种用于制造用于多光束的消隐孔阵列器件的方法包括使用基板依次形成第一绝缘膜，第一金属膜，第二绝缘膜和第二金属膜，基板上依次层叠电极和焊盘 第二金属膜，去除第二金属膜的一部分，使用作为掩模的电极，焊盘和第二金属膜的剩余部分去除第二绝缘膜，并且形成开口，每个开口分别位于一对 电极，其中，第二金属膜的一部分被蚀刻，使得其中的一部分保留在每个连接电极中的一个和一个焊盘的区域中，并且除了开口本身之外还形成有开口本身的整个开口的区域 电极，焊盘以及第一和第二金属膜，使得绝缘膜不被暴露。

公开(公告)号：US20160363856A1

公开(公告)日：2016-12-15

申请号：US15175072

申请日：2016-06-07

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hisashi Yagi ,  Daijitsu Harada ,  Masaki Takeuchi ,  Kazuo Shirota ,  Kazuhiko Aoki

IPC分类号： G03F1/60 ,  G03F1/20 ,  G01N21/23 ,  B05D1/28 ,  C03C17/32

CPC分类号： G03F1/60 ,  B05D1/28 ,  C03C17/32 ,  G01N21/23 ,  G03F1/20 ,  G03F7/0002

摘要： A synthetic quartz glass substrate is prepared by furnishing a synthetic quartz glass block, coating two opposite surfaces of the block with a liquid having a transmittance of at least 99.0%/mm at the wavelength of birefringence measurement, measuring a birefringence distribution on the block by letting light enter one coated surface and exit the other coated surface, and sorting the block to an acceptable group or unacceptable group, based on the measured birefringence distribution.

摘要翻译： 制备合成石英玻璃基板，通过提供合成石英玻璃块，在双折射测量波长下，将具有透射率至少为99.0％/ mm的液体在块的两个相对表面上涂覆，测量块上的双折射分布，测量块上的双折射分布 使光进入一个涂覆的表面并离开另一个涂覆的表面，并且基于测量的双折射分布将块分选成可接受的组或不可接受的组。

公开(公告)号：US20160259238A1

公开(公告)日：2016-09-08

申请号：US15157190

申请日：2016-05-17

申请人： D2S, Inc.

发明人： Akira Fujimura

IPC分类号： G03F1/20 ,  H01J37/317 ,  G06F17/50

CPC分类号： G03F1/20 ,  G03F1/70 ,  G06F17/5009 ,  G06F17/5068 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31769 ,  H01J2237/31774 ,  H01J2237/31776

摘要： A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.

摘要翻译： 公开了一种用于压裂或掩模数据准备的方法和系统，其中输入用于衬底的期望的衬底图案。 然后确定多个带电粒子束照射，其将在掩模版上形成掩模版图案，其中标线图案将使用光学光刻工艺在衬底上产生衬底图案，其中衬底图案在预期的公差范围内 底物图案。 还公开了用于在掩模版上形成图案的类似方法和类似系统。

公开(公告)号：US20160147142A1

公开(公告)日：2016-05-26

申请号：US14943331

申请日：2015-11-17

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Teppei Adachi ,  Satoshi Watanabe ,  Daisuke Domon ,  Keiichi Masunaga

IPC分类号： G03F1/78 ,  G03F1/80 ,  G03F1/20

CPC分类号： G03F1/78 ,  G03F1/20 ,  G03F1/80 ,  G03F7/0046 ,  G03F7/0392

摘要： A photomask blank has a chemically amplified positive resist film comprising (A) a polymer comprising recurring units having a specific substituent group on aromatic ring and recurring units having at least one fluorine atom, (B) a base resin which is decomposed under the action of acid to increase its solubility in alkaline developer, (C) an acid generator, and (D) a basic compound. The resist film is improved in age stability and antistatic film-receptivity.

摘要翻译： 光掩模坯料具有化学放大正型抗蚀剂膜，其包含（A）包含在芳香环上具有特定取代基的重复单元和具有至少一个氟原子的重复单元的聚合物，（B）在具有至少一个氟原子的作用下分解的基础树脂 酸，以增加其在碱性显影剂中的溶解度，（C）酸产生剂，和（D）碱性化合物。 抗蚀剂膜的年龄稳定性和抗静电感光度得到改善。