公开(公告)号：US08598605B2

公开(公告)日：2013-12-03

申请号：US13601454

申请日：2012-08-31

Applicant: Naoharu Sugiyama ,  Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Shinya Nunoue

Inventor： Naoharu Sugiyama ,  Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Shinya Nunoue

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/32 ,  H01L33/06 ,  H01L33/12

Abstract: According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

公开(公告)号：US20130229106A1

公开(公告)日：2013-09-05

申请号：US13601433

申请日：2012-08-31

Applicant: Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

Inventor： Iwao MITSUISHI ,  Naotoshi MATSUDA ,  Yumi FUKUDA ,  Keiko ALBESSARD ,  Aoi OKADA ,  Masahiro KATO ,  Ryosuke HIRAMATSU ,  Yasushi HATTORI ,  Shinya NUNOUE

IPC: C09K11/77 ,  H05B33/12

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05B33/12 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to one embodiment, the luminescent material emits light having an luminescence peak within a wavelength range of 550 to 590 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material has a composition represented by the following formula 1. (Sr1-xEux)aSibAlOcNd  formula 1 wherein x, a, b, c and d satisfy following condition: 0

Abstract translation: 根据一个实施例，当在具有250至520nm的波长范围内的发射峰的光激发时，发光材料发射具有在550至590nm的波长范围内的发光峰的光。 发光材料具有由下式1表示的组成。（Sr1-xEux）aSibAlOcNdformula 1其中x，a，b，c和d满足以下条件：0

公开(公告)号：US08526477B2

公开(公告)日：2013-09-03

申请号：US13034329

申请日：2011-02-24

Applicant: Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

Inventor： Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

IPC: H01S5/028 ,  H01S5/22 ,  H01S5/00

CPC classification number: H01S5/164 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

Abstract translation: 一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。 该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。 端面垂直于脊条形状的延伸方向。 端面层具有比有源层宽的带隙。 端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

公开(公告)号：US08525197B2

公开(公告)日：2013-09-03

申请号：US13035304

申请日：2011-02-25

Applicant: Yoshiyuki Harada ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

Inventor： Yoshiyuki Harada ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L31/072

CPC classification number: H01L33/08 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

公开(公告)号：US08470625B2

公开(公告)日：2013-06-25

申请号：US13037687

申请日：2011-03-01

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/18 ,  H01L33/06 ,  H01L21/268 ,  H01L21/428

CPC classification number: H01L33/0079 ,  H01L33/20 ,  H01L33/22

Abstract: A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.

Abstract translation: 通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一 电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层 基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上形成从第一基板上的第一金属层相反的表面侧的凹槽 并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

公开(公告)号：US08466477B2

公开(公告)日：2013-06-18

申请号：US13398239

申请日：2012-02-16

Applicant: Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

Inventor： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L29/22

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

Abstract: A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US08461615B2

公开(公告)日：2013-06-11

申请号：US12875632

申请日：2010-09-03

Applicant: Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/36 ,  H01L33/38

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

公开(公告)号：US08455911B2

公开(公告)日：2013-06-04

申请号：US12873586

申请日：2010-09-01

Applicant: Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L31/022466 ,  B82Y20/00 ,  H01L31/035236 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light-emitting device using an ITON layer for a transparent conductor and realizing low drive voltage, high luminance efficiency, and uniformed light emission intensity distribution is provided. The semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and whose uppermost part is a p-type GaN layer; an ITON (Indium Tin Oxynitride) layer formed on the p-type GaN layer; an ITO (Indium Tin Oxide) layer formed on the ITON layer; a first metal electrode formed on a part on the ITO layer; and a second metal electrode formed in contact with the n-type semiconductor layer.

Abstract translation: 根据一个实施例，提供了一种使用用于透明导体的ITON层并实现低驱动电压，高亮度效率和均匀的发光强度分布的半导体发光器件。 半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 在有源层上形成的p型半导体层，其最上部是p型GaN层; 形成在p型GaN层上的ITON（铟锡氧氮化物）层; 形成在ITON层上的ITO（氧化铟锡）层; 形成在所述ITO层的一部分上的第一金属电极; 以及形成为与n型半导体层接触的第二金属电极。

公开(公告)号：US08450918B2

公开(公告)日：2013-05-28

申请号：US12874778

申请日：2010-09-02

Applicant: Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

Inventor： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC: F21V9/16 ,  G02B26/00

CPC classification number: G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

Abstract: According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

Abstract translation: 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

公开(公告)号：US20130087806A1

公开(公告)日：2013-04-11

申请号：US13404607

申请日：2012-02-24

Applicant: Toshihide ITO ,  Hiroshi Katsuno ,  Shinya Nunoue

Inventor： Toshihide ITO ,  Hiroshi Katsuno ,  Shinya Nunoue

IPC: H01L33/32 ,  H01L33/60

CPC classification number: H01L33/32 ,  H01L33/0075 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.