公开(公告)号：US08003958B2

公开(公告)日：2011-08-23

申请号：US12416185

申请日：2009-04-01

Applicant: Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

Inventor： Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

IPC: H01J37/317

CPC classification number: H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32752 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586

Abstract: There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Abstract translation: 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。

公开(公告)号：US07989784B2

公开(公告)日：2011-08-02

申请号：US12494270

申请日：2009-06-30

Applicant: Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

Inventor： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/2006 ,  H01J2237/201 ,  H01J2237/202

Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

Abstract translation: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

公开(公告)号：US20110155897A1

公开(公告)日：2011-06-30

申请号：US12825504

申请日：2010-06-29

Applicant: Stanley Harrison

Inventor： Stanley Harrison

IPC: H05H3/02 ,  G21K5/00

CPC classification number: H01J37/08 ,  H01J37/301 ,  H01J2237/045 ,  H01J2237/0812 ,  H01J2237/083 ,  H01J2237/31

Abstract: A gas-cluster-jet generator with improved vacuum management techniques and apparatus is disclosed. The gas-cluster-jet generator comprises a substantially conically shaped vacuum chamber for housing the nozzle and jet exit portions of the gas-cluster-jet generator. A skimmer may be located at the narrow end of the conical chamber and a close-coupled vacuum pump is located at the wide end of the conical chamber. Support members for the nozzle are high conductivity “spider” supports that provide support rigidity while minimizing gas flow obstruction for high pumping speed. The conically shaped vacuum chamber redirects un-clustered gas in a direction opposite the direction of the gas-cluster-jet for efficient evacuation of the un-clustered gas. The nozzle and a skimmer may have fixed precision relative alignment, or may optionally have a nozzle aiming adjustment feature for aligning the gas-cluster-jet with the skimmer and downstream beamline components. Also disclosed are various configurations of gas-cluster ion-beam processing tools employing the improved gas-cluster-jet generator.

Abstract translation: 公开了一种具有改进的真空管理技术和设备的气体簇射流发生器。 气体簇喷射发生器包括用于容纳喷气发生器的喷嘴和喷射出口部分的大致锥形的真空室。 撇渣器可以位于锥形室的窄端，并且紧密联接的真空泵位于锥形室的宽端。 喷嘴的支撑构件是高导电性“蜘蛛”支撑，其提供支撑刚度，同时最大限度地减少气流阻塞以实现高泵送速度。 圆锥形真空室沿着与气体簇射流方向相反的方向重新定向未聚集的气体，以有效排出未聚集的气体。 喷嘴和撇渣器可以具有固定的精确度相对对准，或者可以可选地具有用于使气体簇射流与分离器和下游束线部件对准的喷嘴瞄准调整特征。 还公开了采用改进的气体 - 簇射流发生器的气体 - 团簇离子束加工工具的各种构造。

公开(公告)号：US20110143527A1

公开(公告)日：2011-06-16

申请号：US12964357

申请日：2010-12-09

Applicant: Wilhelm P. PLATOW ,  Neil J. Bassom ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Craig R. Chaney

Inventor： Wilhelm P. PLATOW ,  Neil J. Bassom ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Craig R. Chaney

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/02

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.

Abstract translation: 本发明公开了一种用于产生均匀离子束的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。 该方法可以包括：将掺杂剂引入到离子源的离子源室中，掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室，稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子，含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底，其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。

公开(公告)号：US07947966B2

公开(公告)日：2011-05-24

申请号：US12183961

申请日：2008-07-31

Applicant: William F. DiVergilio

Inventor： William F. DiVergilio

IPC: H01J27/02

CPC classification number: H01J27/16 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/31701

Abstract: An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.

Abstract translation: 离子源包括包括等离子体产生部件的第一等离子体室和用于接收第一气体的第一气体入口，使得所述等离子体产生部件和所述第一气体相互作用以在所述第一等离子体室内产生第一等离子体，其中所述第一等离子体室 进一步限定用于从所述第一等离子体提取电子的孔，以及包括用于接收第二气体的第二气体入口的第二等离子体室，其中所述第二等离子体室还限定与所述第一等离子体室的孔基本对准的孔，用于 接收从其提取的电子，使得电子和第二气体相互作用以在所述第二等离子体室内产生第二等离子体，所述第二等离子体室还限定用于从所述第二等离子体提取离子的提取孔。

公开(公告)号：US20110117738A1

公开(公告)日：2011-05-19

申请号：US12873573

申请日：2010-09-01

Applicant: Noel Russell ,  John J. Hautala ,  John Gumpher

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/3205

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20110108058A1

公开(公告)日：2011-05-12

申请号：US12616662

申请日：2009-11-11

Applicant: Aseem K. Srivastava ,  William F. DiVergilio ,  Glen R. Gilchrist

Inventor： Aseem K. Srivastava ,  William F. DiVergilio ,  Glen R. Gilchrist

IPC: B08B5/00 ,  C23C16/505 ,  C23C14/00

CPC classification number: C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/0225

Abstract: Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

Abstract translation: 本文公开的一些技术有助于清除分子束成分的残留物。 例如，在示例性方法中，沿着光束路径提供分子束，导致分子束分量上的残留物积聚。 为了减少残留物，分子束组分暴露于氢氟碳等离子体。 基于是否满足第一预定条件，暴露于氢氟烃等离子体结束，第一预定条件指示残留物的去除程度。 还公开了其它方法和系统。

公开(公告)号：US20110101237A1

公开(公告)日：2011-05-05

申请号：US12846525

申请日：2010-07-29

Applicant: Moon-Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

Inventor： Moon-Youn JUNG ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

IPC: H01J27/02 ,  A61N5/00

CPC classification number: H01J27/26 ,  A61N2005/1087 ,  G21K5/04 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  Y10S977/949

Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.

Abstract translation: 提供一种碳离子发生装置和使用其的肿瘤治疗装置。 碳离子产生装置包括碳纳米结构，碳排放结构，电离结构和促进剂。 碳排放结构被配置为从碳纳米结构的一端诱导碳原子的发射。 电离结构被配置成电离发射的碳原子。 加速器被配置为加速电离的碳原子。

公开(公告)号：US20110101213A1

公开(公告)日：2011-05-05

申请号：US12609912

申请日：2009-10-30

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J37/08 ,  B01D59/44

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/0815

Abstract: Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.

Abstract translation: 公开了一种离子注入系统的方法和系统，其能够在不改变离子源处的电荷状态的情况下从离子源增加高于第一电荷状态的最大动能的束电流。 选择具有第一正电荷状态的正离子进入加速器。 第一正电荷状态的正离子在加速阶段加速并剥离，以将其转换成第二电荷状态的正离子。 可以获得高于第一充电状态的最大动能水平的第二动能水平。

公开(公告)号：US07883573B2

公开(公告)日：2011-02-08

申请号：US11697790

申请日：2007-04-09

Applicant: Amitabh Jain

Inventor： Amitabh Jain

IPC: C09D201/00

CPC classification number: H01J37/08 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L21/823418 ,  H01L29/6659 ,  Y10S252/95

Abstract: The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.

Abstract translation: 为了在半导体制造工艺中使用本发明，提供了制备离子注入源材料的方法（100）。 该方法包括提供（110）潮解离子注入源材料，并将潮解离子注入源材料与有机液体混合（110）以形成糊状物。