A SEMICONDUCTOR PACKAGE OF A FLIPPED MOSFET
    203.
    发明申请
    A SEMICONDUCTOR PACKAGE OF A FLIPPED MOSFET 有权
    襟翼MOSFET的半导体封装

    公开(公告)号:US20140361418A1

    公开(公告)日:2014-12-11

    申请号:US13913183

    申请日:2013-06-07

    Abstract: The invention relates to a semiconductor package of a flip chip and a method for making the semiconductor package. The semiconductor chip comprises a metal-oxide-semiconductor field effect transistor. On a die paddle including a first base, a second base and a third base, half-etching or punching is performed on the top surfaces of the first base and the second base to obtain plurality of grooves that divide the top surface of the first base into a plurality of areas comprising multiple first connecting areas, and divide the top surface of the second base into a plurality of areas comprising at least a second connecting area. The semiconductor chip is connected to the die paddle at the first connecting areas and the second connecting area.

    Abstract translation: 本发明涉及倒装芯片的半导体封装以及制造半导体封装的方法。 半导体芯片包括金属氧化物半导体场效应晶体管。 在包括第一基底,第二基底和第三基底的裸片上,在第一基底和第二基底的顶表面上进行半蚀刻或冲孔,以获得多个凹槽,该凹槽将第一基底 进入包括多个第一连接区域的多个区域,并且将第二基座的顶表面分成包括至少第二连接区域的多个区域。 半导体芯片在第一连接区域和第二连接区域处连接到管芯焊盘。

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