Copper-nickel alloys for brazed articles
    24.
    发明授权
    Copper-nickel alloys for brazed articles 失效
    用于钎焊制品的铜镍合金

    公开(公告)号:US4578320A

    公开(公告)日:1986-03-25

    申请号:US587750

    申请日:1984-03-09

    CPC classification number: B23K35/302 C22C9/06 Y10T428/12903

    Abstract: The present invention relates to copper-nickel alloys having improved ductility at elevated temperatures. The alloys consist essentially of about 5% to about 45%, preferably about 5% to 35% nickel, about 0.4% to about 1.1%, preferably about 0.6% to about 1% manganese, about 0.003% to about 0.04%, preferably about 0.008% to about 0.03% phosphorous and the balance essentially copper. The alloys described herein have particular utility in brazed articles or assemblies.

    Abstract translation: 本发明涉及在升高的温度下具有改善的延展性的铜 - 镍合金。 合金基本上由约5%至约45%,优选约5%至35%的镍,约0.4%至约1.1%,优选约0.6%至约1%的锰,约0.003%至约0.04%,优选约 0.008%至约0.03%的磷,余量基本上为铜。 本文所述的合金在钎焊制品或组件中具有特别的用途。

    Highly dilutable polishing concentrates and slurries
    26.
    发明授权
    Highly dilutable polishing concentrates and slurries 有权
    高度可稀释的抛光浓缩液和浆液

    公开(公告)号:US08404143B2

    公开(公告)日:2013-03-26

    申请号:US13402365

    申请日:2012-02-22

    CPC classification number: H01L21/30625 C09G1/02 H01L21/3212 H01L21/7684

    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

    Abstract translation: 本公开提供了用于化学机械抛光浆料的浓缩物,以及将该浓缩物稀释到使用点浆料的方法。 浓缩物包括研磨剂,络合剂和缓蚀剂,浓缩物用水和氧化剂稀释。 这些组分的存在量使得浓缩物可以以非常高的稀释比稀释,而不影响抛光性能。

    HIGHLY DILUTABLE POLISHING CONCENTRATES AND SLURRIES
    27.
    发明申请
    HIGHLY DILUTABLE POLISHING CONCENTRATES AND SLURRIES 有权
    高灵敏度的抛光浓度和流动性

    公开(公告)号:US20120145951A1

    公开(公告)日:2012-06-14

    申请号:US13402365

    申请日:2012-02-22

    CPC classification number: H01L21/30625 C09G1/02 H01L21/3212 H01L21/7684

    Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

    Abstract translation: 本公开提供了用于化学机械抛光浆料的浓缩物,以及将该浓缩物稀释到使用点浆料的方法。 浓缩物包括研磨剂,络合剂和缓蚀剂,浓缩物用水和氧化剂稀释。 这些组分的存在量使得浓缩物可以以非常高的稀释比稀释,而不影响抛光性能。

    Slurry compositions and method for the chemical-mechanical polishing of
copper and copper alloys
    29.
    发明授权
    Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys 有权
    铜和铜合金化学机械抛光的浆料组成和方法

    公开(公告)号:US06083840A

    公开(公告)日:2000-07-04

    申请号:US200518

    申请日:1998-11-25

    CPC classification number: C09K3/1463 C09G1/02 C09K3/1436 H01L21/3212

    Abstract: The present invention relates to an improved chemical-mechanical polishing (CMP) method for polishing a copper coated wafer containing a copper adhesion-promoting layer and a silicon-based layer. The method polishes copper layers with high removal rates, low defect densities and reduced amounts of dishing and erosion. The method involves a two step process. The first step is to utilize a bulk copper removal slurry that rapidly removes the majority the copper on the substrate. The second step utilizes a 1:1:1 selectivity copper/tantalum/silicon dioxide (Cu/Ta/SiO.sub.2) slurry that has approximately the same polishing rates for the copper layer, the adhesion-promoting layer and the silicon-based substrate. The second slurry reduces the amount of dishing and erosion that occurs in the copper trenches and dense copper arrays.

    Abstract translation: 本发明涉及一种用于抛光含铜粘合促进层和硅基层的铜涂层晶片的改进的化学机械抛光(CMP)方法。 该方法以高去除率,低缺陷密度和减少的凹陷和侵蚀量抛光铜层。 该方法涉及两步法。 第一步是使用快速去除基底上大部分铜的大量铜去除浆液。 第二步采用对铜层,粘合促进层和硅基底板具有大致相同抛光速率的1:1:1选择性铜/钽/二氧化硅(Cu / Ta / SiO2)浆料。 第二种浆料减少了在铜沟槽和致密铜阵列中发生的凹陷和腐蚀的量。

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