Abstract:
A method of stacking a chip, including an integrated circuit, onto a substrate including applying an anisotropic conductive film (ACF) or a solder-filled conductive film onto a surface thereof, the surface being configured to electrically couple to the film, placing the chip onto the film, the chip being configured to electrically couple to the film, compressively pressurizing the chip, the film and the surface such that the chip is electrically coupled to the surface via the film,, testing the chip to determine whether the chip is operating normally, reworking the placement of the chip onto the film and repeating the compressive pressurization if the chip is determined to not be operating normally, repeating the testing to determine whether the chip is operating normally, and once the chip is determined to be operating normally, bonding the chip, the film and the surface.
Abstract:
A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.
Abstract:
A method is provided for making ferrules for connecting optical fibers to other optical fibers or to an optical input device such as an optical chip. The method utilizes ceramic greensheets or silicon wafers. In one method, the greensheets are stacked and laminated and then fiber optic through openings are provided in the laminate for holding the fibers. The laminate is then sintered forming the ferrule.
Abstract:
A plate for use in mixing and testing materials in the pharmaceutical industry is formed by a method in which apertures in a set of greensheets are formed by a material removal process, at least some of the apertures being filled with a composite material combining a durable matrix material that remains in the final structure and a temporary material that is removed after the sintering step. An array of apertures is formed in a template plate by photolithographic means and transferred to an adjacent greensheet.
Abstract:
A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC) includes attaching the handler to the wafer using an adhesive comprising a polymer; performing edge processing to remove an excess portion of the adhesive from an edge of the handler and wafer; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer. A system for releasing a handler from a wafer, the wafer comprising an IC includes a handler attached to a wafer using an adhesive comprising a polymer; an edge processing module, the edge processing module configured to remove an excess portion of the adhesive from the edge of the handler and wafer; and a laser, the laser configured to ablate the adhesive through the handler.
Abstract:
A method for removing a thinned silicon structure from a substrate, the method includes selecting the silicon structure with soldered connections for removal; applying a silicon structure removal device to the silicon structure and the substrate, wherein the silicon structure removal device comprises a pre-determined temperature setpoint for actuation within a range from about eighty percent of a melting point of the soldered connections to about the melting point; heating the silicon structure removal device and the soldered connections of the silicon structure to within the range to actuate the silicon structure removal device; and removing the thinned silicon structure. Also disclosed is a structure including a plurality of layers, at least one layer including a thinned silicon structure and solder coupling the layer to another layer of the plurality; wherein the solder for each layer has a predetermined melting point.
Abstract:
A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.
Abstract:
A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
Abstract:
Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step. One or more of the plurality of decoupling capacitors are selectively deactivated.
Abstract:
Disclosed are microelectronic structures based on improved design and material combinations to provide improved current capabilities per I/O. The preferred embodiment of the invention uses a combination of one or more of the following: (1) Underbump metallurgy which enhances current per I/O by increasing via diameter or by having multiple via openings under BLM; (2) Thicker underbump metallurgy, where use of good conductor metallurgies can be used with increased thickness; (3) Utilizing larger via diameter under bump metallurgy, larger solder bump diameter and/or other current enhancing features for power and/or ground via connections; and (4) Using additives in Pb-free alloys to alter microstructure to minimize migration of atoms in the solder or at intermetallic transitions.