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43 条记录 (耗时 0.024 秒)

    Substrate treatment apparatus
    21.
    发明授权
    Substrate treatment apparatus 有权

    公开(公告)号：US06620288B2

    公开(公告)日：2003-09-16

    申请号：US09812327

    申请日：2001-03-19

    申请人： Hisato Shinohara ,  Naoto Kusumoto ,  Masato Yonezawa

    发明人： Hisato Shinohara ,  Naoto Kusumoto ,  Masato Yonezawa

    IPC分类号： H01L21306

    CPC分类号： H01L21/67017 ,  C23C14/562 ,  C23C16/545 ,  H01J37/32458 ,  H01J37/34

    摘要： In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the substrate treatment chambers and the buffer chamber, and gas inlets are respectively provided for the connection tubes. A gas (308) for treating a substrate flows from the connection tube (304a) into the substrate treatment chamber (301) and the buffer chamber (302), while a gas (309) for treating a substrate flows from the connection tube (304b) into the substrate treatment chamber (303) and the buffer chamber (302). Accordingly, the gas does not move from the substrate treatment chamber to the buffer chamber against a gas flow, thereby allowing the separation between ambiences.

    Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
    22.
    发明授权
    Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation 失效
    在氢气混合气体中使用激光退火然后氮化物形成的硅薄膜器件的制造方法

    公开(公告)号：US06444506B1

    公开(公告)日：2002-09-03

    申请号：US08735680

    申请日：1996-10-23

    申请人： Naoto Kusumoto ,  Toru Takayama ,  Masato Yonezawa

    发明人： Naoto Kusumoto ,  Toru Takayama ,  Masato Yonezawa

    IPC分类号： H01L2184

    CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/67739 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

    摘要： A crystalline silicon film is obtained by laser-annealing a non-single-crystal silicon film by illuminating it with a laser beam in a hydrogen-inclusive atmosphere. Further, the above laser annealing step and a step of forming an insulating film to become a gate insulating film are performed consecutively. As a result, hydrogen is effectively confined in a channel forming region and the boundary between the channel forming region and the gate insulating film is given superior characteristics, which lead to proper threshold voltage control, a reduction in S-value, and an increase in mobility. The hydrogen confinement can be made more effective by employing a silicon nitride film or a multi-layer film including a silicon nitride film as the insulating film to become the gate insulating film.

    摘要翻译： 通过在包含氢的气氛中用激光束照射非单晶硅膜来获得晶体硅膜。 此外，连续执行上述激光退火步骤和形成绝缘膜以成为栅极绝缘膜的步骤。 结果，氢被有效地限制在沟道形成区域中，并且沟道形成区域和栅极绝缘膜之间的边界被赋予优异的特性，这导致适当的阈值电压控制，S值的降低和增加 流动性 通过使用氮化硅膜或包含氮化硅膜作为绝缘膜的多层膜来形成栅极绝缘膜，可以使氢限制更有效。

    Substrate processing system, control method for substrate processing apparatus and program stored on medium
    28.
    发明授权
    Substrate processing system, control method for substrate processing apparatus and program stored on medium 有权
    基板处理系统，基板处理装置的控制方法和存储在介质上的程序

    公开(公告)号：US07953512B2

    公开(公告)日：2011-05-31

    申请号：US12230788

    申请日：2008-09-04

    申请人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

    发明人： Yuichi Takenaga ,  Tatsuya Yamaguchi ,  Wenling Wang ,  Toshihiko Takahashi ,  Masato Yonezawa

    IPC分类号： G06F19/00 ,  B05C11/00

    CPC分类号： H01L21/67276

    摘要： The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

    摘要翻译： 本发明提供了一种基板处理系统，用于基板处理装置的控制方法和用于该系统和/或方法的程序，其中每一个旨在实现对经处理的基板上的成膜量的有效控制。 基板处理系统包括适于在多个基板中的每一个上形成薄膜的基板处理单元; 图案获取单元，用于获得关于所述多个基板中未处理的基板和处理的基板的布置的布置图案的信息; 以及存储单元，其适于在其中存储表示通过未处理的基板和处理的基板在多个基板之间的布置来指示对基板上的成膜量的影响的布置/成膜量模型。 计算单元根据布置/成膜量模型，在布置图案的情况下，计算基板上的估计成膜量。 然后，确定单元确定由计算单元计算的估计成膜量是否在预定范围内。 如果将由计算单元计算的估计成膜量确定为在预定范围内，则控制单元将控制和驱动基板处理单元来处理基板。

    Plasma CVD device and discharge electrode
    30.
    发明授权
    Plasma CVD device and discharge electrode 有权
    等离子体CVD装置和放电电极

    公开(公告)号：US07594479B2

    公开(公告)日：2009-09-29

    申请号：US09820520

    申请日：2001-03-28

    申请人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

    发明人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/3244 ,  C23C16/4401 ,  C23C16/50 ,  C23C16/545 ,  H01J2237/022

    摘要： In a film formation chamber, a gas flow to be introduced is rectified in a direction away from the film formation surface of the substrate on which the film is to be formed, so as to exhaust the fine particles generated in the discharge space and the fragmental particles generated by exfoliation of the film from the wall of the vacuum chamber and the discharge electrode, thereby preventing the particles from adhering the film formation surface of the substrate. The fine particles and fragmental particles are sucked and exhausted from a plurality of apertures provided on the entire surface of the discharge electrode to establish a steady state in which the amount of a film deposited on the discharge electrode and the amount of an exfoliating film to be exhausted are equal to each other, thereby allowing continuous film formation without cleaning the discharge electrode over a long period.

    摘要翻译： 在成膜室中，将导入的气流沿着与要形成膜的基板的成膜面相反的方向被整流，从而排出在放电空间中产生的微粒和碎片 通过从真空室的壁和放电电极剥离膜而产生的颗粒，从而防止颗粒粘附基材的成膜表面。 从设置在放电电极的整个表面上的多个孔吸引和排出细颗粒和碎片颗粒，以建立稳定状态，其中沉积在放电电极上的膜的量和剥离膜的量为 排气量相等，从而允许连续成膜而不用长时间清洗放电电极。