公开(公告)号：US20100175755A1

公开(公告)日：2010-07-15

申请号：US12643380

申请日：2009-12-21

Applicant: Kaushal K. SINGH ,  Omkaram NALAMASU ,  Nety M. KRISHNA ,  Michael SNURE ,  Ashutosh TIWARI

Inventor： Kaushal K. SINGH ,  Omkaram NALAMASU ,  Nety M. KRISHNA ,  Michael SNURE ,  Ashutosh TIWARI

IPC: H01L31/032 ,  H01L21/16 ,  H01L29/786

CPC classification number: H01L51/4226 ,  C25B1/003 ,  H01G9/2031 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

Abstract translation: 铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。 具有CuBO 2薄膜的器件包括p型透明薄膜晶体管（TTFT），其包括作为沟道层的薄膜CuBO 2和具有CuBO 2 p层的薄膜太阳能电池。 还描述了包括“核 - 壳”和“纳米对”“颗粒的各种形式的CuBO 2的固态染料敏化太阳能电池（SS-DSSC）和制造方法。

公开(公告)号：US20100096256A1

公开(公告)日：2010-04-22

申请号：US12255865

申请日：2008-10-22

Applicant: OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

Inventor： OMKARAM NALAMASU ,  Steven Verhaverbeke ,  Majeed Foad ,  Mahalingam Venkatesan ,  Nety M. Krishna

IPC: C23F1/02

CPC classification number: G11B5/84 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  H01F41/34

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

公开(公告)号：US07042645B2

公开(公告)日：2006-05-09

申请号：US10740600

申请日：2003-12-22

Applicant: Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

Inventor： Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

IPC: G02B27/00

CPC classification number: G02B3/0031 ,  G02B3/0056

Abstract: A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.

Abstract translation: 描述微透镜阵列和制造方法。 微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。 微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。 主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。 去除弹性体材料提供多个空腔，其填充有包括纳米颗粒的环氧树脂。 环氧树脂的固化完成了微透镜阵列的制造。 微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。

公开(公告)号：US06700708B2

公开(公告)日：2004-03-02

申请号：US10157015

申请日：2002-05-30

Applicant: Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

Inventor： Francis M. Houlihan ,  Madanagopal V. Kunnavakkam ,  James A. Liddle ,  Omkaram Nalamasu

IPC: G02B2710

CPC classification number: G02B3/0031 ,  G02B3/0056

Abstract: A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.

Abstract translation: 描述微透镜阵列和制造方法。 微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。 微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。 主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。 去除弹性体材料提供多个空腔，其填充有包括纳米颗粒的环氧树脂。 环氧树脂的固化完成了微透镜阵列的制造。 微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。

公开(公告)号：US20160293798A1

公开(公告)日：2016-10-06

申请号：US15183594

申请日：2016-06-15

Applicant: Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

公开(公告)号：US20130285065A1

公开(公告)日：2013-10-31

申请号：US13868385

申请日：2013-04-23

Applicant: Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

Inventor： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandla ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC: H01L21/02 ,  H01L29/205

CPC classification number: H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract translation: 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

公开(公告)号：US20130224665A1

公开(公告)日：2013-08-29

申请号：US13762446

申请日：2013-02-08

Applicant: Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

Inventor： Banqiu Wu ,  Ajay Kumar ,  Omkaram Nalamasu

IPC: G03F7/16

CPC classification number: G03F7/16 ,  G03F7/0035 ,  G03F7/165 ,  G03F7/167

Abstract: Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.

Abstract translation: 在本公开中提供了用于执行原子层沉积光刻工艺的方法和装置。 在一个实施例中，用于在器件中的材料层上形成特征的方法包括将第一反应气体混合物脉动到设置在处理室中的衬底的表面，以在衬底表面上形成材料层的第一单层， 高能辐射以处理第一单层的第一区域，以及将第二反应气体混合物脉冲至衬底表面以在第一单层的第二区域上选择性地形成第二单层。

公开(公告)号：US08334017B2

公开(公告)日：2012-12-18

申请号：US12885139

申请日：2010-09-17

Applicant: Victor L. Pushparaj ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

Inventor： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

IPC: C23C16/00

CPC classification number: C23C16/545 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/035227 ,  H01L31/075 ,  H01L31/1876 ,  H01L31/206 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract translation: 提供了一种用于在基底上形成复合材料的方法和装置。 复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。 在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。 纤维网被引导通过各种处理室以形成复合材料。 在另一个实施例中，大规模衬底包括离散衬底。 离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。 复合材料可用于形成储能装置和/或光伏器件。

公开(公告)号：US20120080092A1

公开(公告)日：2012-04-05

申请号：US13250748

申请日：2011-09-30

Applicant: Kaushal K. Singh ,  Robert Jan Visser ,  Srikant Rao ,  Bhaskar Kumar ,  Claire J. Carmalt ,  Ranga Rao Arnepalli ,  Omkaram Nalamasu ,  Gaurav Saraf ,  Sanjayan Sathasivam ,  Christopher Stuart Blackman

Inventor： Kaushal K. Singh ,  Robert Jan Visser ,  Srikant Rao ,  Bhaskar Kumar ,  Claire J. Carmalt ,  Ranga Rao Arnepalli ,  Omkaram Nalamasu ,  Gaurav Saraf ,  Sanjayan Sathasivam ,  Christopher Stuart Blackman

IPC: H01L31/0264 ,  H01L31/18 ,  B82Y40/00

CPC classification number: H01L29/78681 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/301 ,  C23C16/56 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/3245 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/207 ,  H01L29/454 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696 ,  H01L31/022425 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1864 ,  H01L51/0048 ,  H01L51/424 ,  Y02E10/544 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

Abstract translation: 本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。 由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。 在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层 在GaAs基层上掺杂的掺杂剂的类型。

公开(公告)号：US07971489B2

公开(公告)日：2011-07-05

申请号：US12201242

申请日：2008-08-29

Applicant: Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

Inventor： Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

IPC: G01L1/20 ,  G01M5/00

CPC classification number: G01L1/20 ,  G01L1/18 ,  G01L5/0076 ,  Y10S977/953 ,  Y10S977/956

Abstract: A robust, stand-alone load cell comprises a block of aligned carbon nanotubes with parallel electrodes on opposing sides of the block and an electrical circuit connected between the electrodes for measuring the electrical resistance of the block. The nanotubes are preferably aligned perpendicular to the electrodes. Carbon nanotube-based load cells may be incorporated into a wafer assembly for characterizing semiconductor processing equipment. Such a wafer assembly includes two parallel wafers with a plurality of carbon nanotube load cells positioned between and attached to both wafers. The load cells are independently electrically connected to a device which monitors and records the resistivity of the load cell. According to further aspects of the invention, each of the load cell's parallel electrodes may be comprised of many small electrodes, where each small electrode on one side of the block has a corresponding small electrode on the opposing side of the block; corresponding pairs of small electrodes are connected in series to form a chain; an electrical circuit, connected to both ends of the chain of opposing pairs of electrodes, is used to measure the electrical resistance of the chain.

Abstract translation: 坚固的独立测力传感器包括在块的相对侧上具有平行电极的对准碳纳米管块和连接在电极之间的用于测量块的电阻的电路。 纳米管优选垂直于电极取向。 可以将碳纳米管基称重传感器结合到用于表征半导体加工设备的晶片组件中。 这种晶片组件包括两个平行的晶片，其中多个碳纳米管负载单元位于两个晶片之间并附着在两个晶片上。 称重传感器独立地电连接到监测和记录称重传感器的电阻率的装置。 根据本发明的另外的方面，每个负载传感器的平行电极可以由许多小电极组成，其中块的一侧上的每个小电极在块的相对侧具有相应的小电极; 相应的一对小电极串联连接形成链条; 连接到相对电极对的链的两端的电路用于测量链的电阻。