Integrated cirucit package and method for fabrication thereof
    21.
    发明申请
    Integrated cirucit package and method for fabrication thereof 有权
    集成cirucit封装及其制造方法

    公开(公告)号:US20080230860A1

    公开(公告)日:2008-09-25

    申请号:US11878568

    申请日:2007-07-25

    Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device, a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

    Abstract translation: 本发明提供一种集成电路封装及其制造方法。 集成电路封装包括其上具有光敏器件的集成电路芯片; 形成在所述集成电路芯片的上表面上并且电连接到所述感光装置的焊盘,形成在所述焊盘和所述感光装置之间的屏障; 以及形成在集成电路芯片的侧壁上并电连接到接合焊盘的导电层。 阻挡层阻止粘合剂层溢出到形成有感光装置的区域中,以提高制造集成电路封装的成品率。

    INTEGRATED CIRCUIT PACKAGE AND METHOD FOR FABRICATION THEREOF
    28.
    发明申请
    INTEGRATED CIRCUIT PACKAGE AND METHOD FOR FABRICATION THEREOF 有权
    集成电路封装及其制造方法

    公开(公告)号:US20100276774A1

    公开(公告)日:2010-11-04

    申请号:US12836477

    申请日:2010-07-14

    Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.

    Abstract translation: 本发明提供一种集成电路封装及其制造方法。 集成电路封装包括其上具有光敏器件的集成电路芯片; 焊盘,形成在集成电路芯片的上表面上并电连接到感光器件; 在焊盘和感光装置之间形成的屏障; 以及形成在集成电路芯片的侧壁上并电连接到接合焊盘的导电层。 阻挡层阻止粘合剂层溢出到形成有感光装置的区域中,以提高制造集成电路封装的成品率。

    Methods of forming planarized multilevel metallization in an integrated circuit
    30.
    发明授权
    Methods of forming planarized multilevel metallization in an integrated circuit 有权
    在集成电路中形成平面化多层金属化的方法

    公开(公告)号:US07314813B2

    公开(公告)日:2008-01-01

    申请号:US10976539

    申请日:2004-10-29

    CPC classification number: H01L21/76816 H01L21/0276 H01L21/32139 H01L21/7685

    Abstract: A method is provided for forming a semiconductor device that reduces metal-stress-induced photo misalignment by incorporating a multi-layered anti-reflective coating over a metal layer. The method includes providing a substrate with a conductive layer formed over the substrate, depositing a multi-layered anti-reflective coating (including alternating layers of titanium and titanium nitride), defining a plurality of conductive lines in connection with a first etching step, depositing a dielectric layer, and defining at least one via in connection with a second etching step.

    Abstract translation: 提供了一种形成半导体器件的方法,该半导体器件通过在金属层上并入多层抗反射涂层来减少金属应力诱导的光失准。 该方法包括:在衬底上形成导电层的衬底,沉积多层抗反射涂层(包括钛和氮化钛的交替层),与第一蚀刻步骤相结合形成多条导电线,沉积 介电层,并且与第二蚀刻步骤相关地限定至少一个通孔。

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