公开(公告)号：US10522375B2

公开(公告)日：2019-12-31

申请号：US15840215

申请日：2017-12-13

Applicant: Applied Materials, Inc.

Inventor： Edward W. Budiarto ,  Majeed A. Foad ,  Ralf Hofmann ,  Thomas Nowak ,  Todd Egan ,  Mehdi Vaez-Iravani

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/66 ,  G03F1/22 ,  G03F1/24

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

公开(公告)号：US20190130731A1

公开(公告)日：2019-05-02

申请号：US16220351

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

IPC: G08B25/00 ,  G06F17/15 ,  G08B13/196 ,  G06F16/44 ,  G06F16/435 ,  G06Q50/00 ,  G06F16/2457 ,  G06F16/25 ,  G08B31/00 ,  G06F16/248

Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.

公开(公告)号：US10197907B2

公开(公告)日：2019-02-05

申请号：US15438248

申请日：2017-02-21

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

IPC: G03F1/22 ,  G03F1/24 ,  G03F7/20 ,  C23C14/04 ,  C23C16/04 ,  C23C28/00

Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.

公开(公告)号：US10012908B2

公开(公告)日：2018-07-03

申请号：US15410048

申请日：2017-01-19

Applicant: Applied Materials, Inc.

Inventor： Ralf Hofmann ,  Vinayak Vishwanath Hassan ,  Cara Beasley ,  Majeed A. Foad

IPC: G03F1/24 ,  G02B1/14 ,  G03F7/20 ,  C23C16/44 ,  H01J37/32 ,  H01J37/34 ,  C23C14/06 ,  C23C14/14 ,  G21K1/06 ,  G03F1/48 ,  G03F1/52 ,  G02B5/08

CPC classification number: G03F7/702 ,  C23C14/0605 ,  C23C14/0635 ,  C23C14/14 ,  C23C16/44 ,  G02B1/14 ,  G02B5/085 ,  G02B5/0891 ,  G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F7/70033 ,  G03F7/70316 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062 ,  H01J37/32798 ,  H01J37/3429

Abstract: An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.

公开(公告)号：US20180114711A1

公开(公告)日：2018-04-26

申请号：US15840215

申请日：2017-12-13

Applicant: Applied Materials, Inc.

Inventor： Edward W. Budiarto ,  Majeed A. Foad ,  Ralf Hofmann ,  Thomas Nowak ,  Todd Egan ,  Mehdi Vaez-lravani

IPC: H01L21/67 ,  H01L21/033 ,  H01L21/285 ,  H01L21/66 ,  G03F1/22 ,  H01L21/02 ,  G03F1/24

CPC classification number: H01L21/67253 ,  G03F1/22 ,  G03F1/24 ,  H01L21/02631 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2855 ,  H01L22/12 ,  H01L22/26

Abstract: A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.

公开(公告)号：US20170365491A1

公开(公告)日：2017-12-21

申请号：US15689550

申请日：2017-08-29

Applicant: Applied Materials, Inc.

Inventor： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC: H01L21/673 ,  C23C16/54 ,  C23C16/458 ,  H01L21/677 ,  C23C16/455

CPC classification number: H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

公开(公告)号：US09690016B2

公开(公告)日：2017-06-27

申请号：US14696331

申请日：2015-04-24

Applicant: Applied Materials, Inc.

Inventor： Ralf Hofmann ,  Cara Beasley ,  Vinayak Vishwanath Hassan ,  Majeed A. Foad

IPC: G02B5/08 ,  C23C16/24 ,  C23C16/455 ,  G03F7/20 ,  C23C14/06 ,  C23C14/14 ,  G21K1/06 ,  H05G2/00

CPC classification number: G02B5/0891 ,  C23C14/06 ,  C23C14/14 ,  C23C16/24 ,  C23C16/45525 ,  G02B5/0833 ,  G02B5/0875 ,  G03F7/7015 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067 ,  H05G2/008

Abstract: An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.

公开(公告)号：US20170168383A1

公开(公告)日：2017-06-15

申请号：US15444864

申请日：2017-02-28

Applicant: Applied Materials, Inc.

Inventor： Ralf Hofmann ,  Kevin Moraes

IPC: G03F1/22 ,  C23C14/16 ,  C23C14/35 ,  C23C14/54 ,  G03F7/20 ,  C23C14/22

CPC classification number: G03F1/22 ,  C23C14/16 ,  C23C14/165 ,  C23C14/221 ,  C23C14/35 ,  C23C14/352 ,  C23C14/541 ,  G03F7/70958

Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.

公开(公告)号：US20170131627A1

公开(公告)日：2017-05-11

申请号：US15405860

申请日：2017-01-13

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Majeed Foad ,  Cara Beasley ,  Ralf Hofmann

IPC: G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/38

CPC classification number: G03F1/24 ,  C23C16/06 ,  C23C16/44 ,  G03F1/22 ,  G03F1/38

Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.

公开(公告)号：US09612522B2

公开(公告)日：2017-04-04

申请号：US14620114

申请日：2015-02-11

Applicant: Applied Materials, Inc.

Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

IPC: G03F1/54 ,  G03F1/24 ,  G03F1/22 ,  C23C14/04 ,  C23C16/04 ,  C23C28/00

CPC classification number: G03F1/24 ,  C23C14/042 ,  C23C16/042 ,  C23C28/00 ,  C23C28/322 ,  C23C28/34 ,  C23C28/42 ,  C23C28/44 ,  G03F1/22 ,  G03F1/54 ,  G03F7/70033

Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.