公开(公告)号：US08969212B2

公开(公告)日：2015-03-03

申请号：US13834206

申请日：2013-03-15

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已经被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US12146219B2

公开(公告)日：2024-11-19

申请号：US16745141

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib M. Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US11264213B2

公开(公告)日：2022-03-01

申请号：US16511990

申请日：2019-07-15

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/40 ,  H01J37/32 ,  B05B1/00 ,  C23C16/455 ,  C23C16/452 ,  B05B1/18 ,  C23C16/50 ,  H01L21/67

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US10113236B2

公开(公告)日：2018-10-30

申请号：US14577828

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin Krishnarao Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/46 ,  C23C16/455 ,  H01L21/677 ,  H01L21/02 ,  C23C16/44 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US10056233B2

公开(公告)日：2018-08-21

申请号：US15635410

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

公开(公告)号：US09741545B2

公开(公告)日：2017-08-22

申请号：US15359186

申请日：2016-11-22

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Saurabh Garg ,  Jang-Gyoo Yang

IPC: H01L21/00 ,  H01J37/32 ,  C23C16/452 ,  C23C16/455 ,  C23C16/505 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32422 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/517 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31691 ,  H01L21/67017 ,  H01L21/67069 ,  H01L22/26 ,  H01L27/11502 ,  H01L28/55 ,  H01L43/12

Abstract: Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power.

公开(公告)号：US20160126118A1

公开(公告)日：2016-05-05

申请号：US14996621

申请日：2016-01-15

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Jang-Gyoo Yang ,  Alexander Tam ,  Elisha Tam

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract translation: 对半导体处理装置的基板支撑组件进行说明。 组件可以包括底座和与底座联接的杆。 基座可以被配置成提供具有独立控制的温度的多个区域。 每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。 流体通道可以包括以平行逆流装置构造的多个部分。 基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。

公开(公告)号：US20140141621A1

公开(公告)日：2014-05-22

申请号：US13834206

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

Abstract translation: 描述了蚀刻暴露的图案化异质结构的方法，并且包括由反应性前体形成的远程等离子体蚀刻。 等离子体功率是脉冲的，而不是连续地保持。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物选择性地比另一种更快地去除一种材料。 蚀刻选择性是由等离子体功率脉冲到远程等离子体区域而产生的，这已被发现抑制了到达衬底的离子充电物质的数量。 蚀刻选择性也可能由位于远程等离子体的一部分与基板处理区域之间的离子抑制元件的存在引起。

公开(公告)号：US20140057447A1

公开(公告)日：2014-02-27

申请号：US13829669

申请日：2013-03-14

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Xinglong Chen ,  Soonam Park ,  Jonghoon Baek ,  Saurabh Garg ,  Shankar Venkataraman

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32091 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/67075

Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.

Abstract translation: 描述了包括处理室的半导体处理系统。 处理室可以包括盖组件，栅格电极，导电插入件和接地电极。 每个部件可以与可操作以在处理室内产生等离子体的一个或多个电源耦合。 每个部件可以通过定位多个绝缘部件而被电隔离。 一个或多个电源可以利用开关机构与处理室电耦合。 开关可以切换以将一个或多个电源电耦合到处理室的组件。

公开(公告)号：US20140021673A1

公开(公告)日：2014-01-23

申请号：US13723516

申请日：2012-12-21

Applicant: Applied Materials, Inc.

Inventor： Xinglong Chen ,  Jang-Gyoo Yang ,  Alex Tam ,  Elisha Tam

IPC: F28D15/00

CPC classification number: H01L21/67103 ,  F28D15/00 ,  H01L21/67109

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract translation: 对半导体处理装置的基板支撑组件进行说明。 组件可以包括底座和与底座联接的杆。 基座可以被配置成提供具有独立控制的温度的多个区域。 每个区域可以包括流体通道，以通过循环从杆中的内部通道接收的温度控制的流体来在区域内提供基本均匀的温度控制。 流体通道可以包括以平行逆流装置构造的多个部分。 基座还可以包括可被配置为在基座的区域之间提供热隔离的流体吹扫通道。