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公开(公告)号：US11887855B2
公开(公告)日：2024-01-30
申请号：US17223506
申请日：2021-04-06
Applicant: Applied Materials, Inc.
Inventor： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC: H01L21/285 , H01L21/768 , C23C16/14 , C23C16/455 , H01L21/28 , C23C16/06 , H01L21/3205 , C23C16/02 , C23C16/34 , C23C16/42
CPC classification number: H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/4557 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
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公开(公告)号：US11598003B2
公开(公告)日：2023-03-07
申请号：US15702234
申请日：2017-09-12
Applicant: APPLIED MATERIALS, INC.
Inventor： Faruk Gungor , Dien-Yeh Wu , Joel M. Huston , Mei Chang , Xiaoxiong Yuan , Kazuya Daito , Avgerinos V. Gelatos , Takashi Kuratomi , Yu Chang , Bin Cao
IPC: C23C16/455 , C23C16/505 , C23C16/46 , C23C16/458
Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.
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公开(公告)号：US11430661B2
公开(公告)日：2022-08-30
申请号：US16705119
申请日：2019-12-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Takashi Kuratomi , I-Cheng Chen , Avgerinos V. Gelatos , Pingyan Lei , Mei Chang , Xianmin Tang
IPC: H01L21/44 , H01L21/285 , H01J37/32 , C23C16/42 , H01L21/67
Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.
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公开(公告)号：US11059061B2
公开(公告)日：2021-07-13
申请号：US15910398
申请日：2018-03-02
Applicant: Applied Materials, Inc.
Inventor： Kenric Choi , Xiaoxiong Yuan , Daping Yao , Mei Chang
Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.
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公开(公告)号：US10985023B2
公开(公告)日：2021-04-20
申请号：US15461842
申请日：2017-03-17
Applicant: Applied Materials, Inc.
Inventor： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC: H01L21/285 , H01L21/3205 , C23C16/42 , H01L21/768 , C23C16/14 , C23C16/455 , H01L21/28 , C23C16/06 , C23C16/02 , C23C16/34
Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
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Patent Agency Ranking
公开(公告)号：US20180145034A1
公开(公告)日：2018-05-24
申请号：US15817985
申请日：2017-11-20
Applicant: Applied Materials, Inc.
Inventor： Yi Xu , Feiyue Ma , Yu Lei , Kazuya Daito , Vikash Banthia , Kai Wu , Jenn Yue Wang , Mei Chang
IPC: H01L23/532 , H01L21/02 , H01L21/768 , H01L21/3205 , H01L23/528 , H01L21/285
Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.
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公开(公告)号：US09857027B2
公开(公告)日：2018-01-02
申请号：US14476215
申请日：2014-09-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Martin Jeff Salinas , Youqun Dong , David Thompson , Mei Chang
CPC classification number: F17C6/00 , C23C16/4481 , F24F6/025 , G05D9/02 , G05D9/12 , Y10T137/6416 , Y10T137/7306
Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.
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公开(公告)号：US09824889B2
公开(公告)日：2017-11-21
申请号：US14686870
申请日：2015-04-15
Inventor： Andrew C. Kummel , Mary Edmonds , Mei Chang , Jessica S. Kachian
CPC classification number: H01L21/0262 , H01L21/02387 , H01L21/02532 , H01L21/02658
Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1-xAs, InxGa1-xSb, InxGa1-xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.
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公开(公告)号：US09683287B2
公开(公告)日：2017-06-20
申请号：US14058406
申请日：2013-10-21
Applicant: Applied Materials, Inc.
Inventor： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
IPC: C23C16/12 , C23C16/30 , C23C16/455
CPC classification number: C23C16/30 , C23C16/45531 , C23C16/45534
Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.
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公开(公告)号：US09252024B2
公开(公告)日：2016-02-02
申请号：US13897327
申请日：2013-05-17
Applicant: Applied Materials, Inc.
Inventor： Hyman Lam , Nicholas R. Denny , Joseph AuBuchon , Mei Chang
IPC: C23C16/00 , H01L21/3205 , C23C16/48 , H01L21/67 , H01L21/768
CPC classification number: H01L21/32051 , C23C16/482 , H01L21/67115 , H01L21/76862
Abstract: Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.
Abstract translation: 描述了用于处理半导体晶片的装置和方法，使得膜可以沉积在晶片上，并且膜可以被UV处理，而不需要将晶片移动到单独的处理位置。 该装置和方法包括通过惰性气体流与活性气体隔离的窗口。
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