公开(公告)号：US08643194B2

公开(公告)日：2014-02-04

申请号：US13088737

申请日：2011-04-18

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Akiyoshi Yamamoto ,  Tomokazu Takahashi

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Akiyoshi Yamamoto ,  Tomokazu Takahashi

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/561 ,  H01L23/3164 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/16225 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2924/14 ,  Y10T428/2809 ,  H01L2924/00

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer on the base material; and a film for flip chip type semiconductor back surface, which is provided on the pressure-sensitive adhesive layer, in which at least a part of the pressure-sensitive adhesive layer has been cured beforehand by irradiation with a radiation ray.

摘要翻译： 本发明提供了一种用于半导体背面的切割带一体化膜，包括：在基材上包括基材和压敏粘合剂层的切割带; 以及设置在压敏粘合剂层上的倒装芯片型半导体背表面的膜，其中至少一部分粘合剂层已经通过辐射线照射被预先固化。

公开(公告)号：US20110008949A1

公开(公告)日：2011-01-13

申请号：US12830543

申请日：2010-07-06

申请人： Toshimasa SUGIMURA ,  Tomokazu Takahashi ,  Noriyoshi Kawashima ,  Fumiteru Asai

发明人： Toshimasa SUGIMURA ,  Tomokazu Takahashi ,  Noriyoshi Kawashima ,  Fumiteru Asai

IPC分类号： H01L21/78 ,  C09J7/02

CPC分类号： C09J7/29 ,  C09J2201/162 ,  C09J2203/326 ,  C09J2400/226 ,  C09J2423/006 ,  C09J2467/006 ,  C09J2479/086 ,  Y10T428/264 ,  Y10T428/269 ,  Y10T428/2848

摘要： An adhesive sheet for dicing a semiconductor wafer having a laminate comprises; a base film, an intermediate layer and an adhesive layer, the intermediate layer is formed by a thermoplastic resin having a melting point of 50 to 100° C.; and the base film has a higher melting point than the intermediate layer as well as a method for dicing a semiconductor wafer comprises the steps of: adhering the adhesive sheet according to the above to a corrugated surface of a semiconductor wafer, and dicing the semiconductor wafer.

摘要翻译： 用于切割具有层压板的半导体晶片的粘合片包括： 基膜，中间层和粘合剂层，中间层由熔点为50〜100℃的热塑性树脂形成。 并且基膜具有比中间层更高的熔点以及用于切割半导体晶片的方法，包括以下步骤：将根据上述的粘合片粘合到半导体晶片的波纹状表面，并且切割半导体晶片 。

公开(公告)号：US20100028669A1

公开(公告)日：2010-02-04

申请号：US12509742

申请日：2009-07-27

申请人： Takashi HABU ,  Tomokazu Takahashi ,  Fumiteru Asai ,  Takamasa Hirayama

发明人： Takashi HABU ,  Tomokazu Takahashi ,  Fumiteru Asai ,  Takamasa Hirayama

IPC分类号： B32B27/30 ,  C08J3/28

CPC分类号： C09J133/066 ,  C08L2312/06 ,  Y10T428/2809

摘要： A re-releasable adhesive agent comprises a radiation-reactive polymer and a radiation polymerization initiator, the radiation-reactive polymer has a side chain derived from at least one monomer expressed by the formula (1): CH2═CR1COOR2 (1), where R1 is a hydrogen atom or a methyl group, and R2 is a C6 or higher alkyl group, and a side chain having one carbon-carbon double bond, and the monomer of formula (1) is contained in a ratio of less than 50 mol % with respect to the total monomer constituting the main chain of the radiation-reactive polymer.

摘要翻译： 可再释放的粘合剂包括辐射反应性聚合物和辐射聚合引发剂，辐射反应性聚合物具有衍生自由式（1）表示的至少一种单体的侧链：CH2-CR1COOR2（1），其中R1 是氢原子或甲基，R2是C6或更高级的烷基，具有一个碳 - 碳双键的侧链和式（1）的单体的含量小于50摩尔％ 相对于构成辐射反应性聚合物主链的总单体。

公开(公告)号：US09293387B2

公开(公告)日：2016-03-22

申请号：US13191791

申请日：2011-07-27

申请人： Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  C09J163/00 ,  H01L23/00

CPC分类号： H01L23/3157 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/31504 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00

摘要： The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜， 其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。

公开(公告)号：US08986486B2

公开(公告)日：2015-03-24

申请号：US13170581

申请日：2011-06-28

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： B32B38/04 ,  C09J7/02 ,  H01L21/56 ,  H01L21/683 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L23/544

CPC分类号： H01L21/6836 ,  B32B37/1284 ,  B32B38/0004 ,  B32B38/10 ,  B32B2405/00 ,  B32B2457/14 ,  C09J7/20 ,  C09J165/00 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/5448 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/73204 ,  H01L2224/81095 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1075 ,  Y10T156/1077 ,  Y10T156/1082 ,  Y10T156/1093 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/1495 ,  Y10T428/15 ,  Y10T428/21 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099

摘要： The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

摘要翻译： 本发明涉及一种用于半导体器件生产的膜，其包括：隔板; 以及多个粘附层附着的切割带，每个粘合剂层附着的切割带包括层合在切割带上的切割带和粘合剂层，它们以预定的间隔层压在隔板上，使得粘合剂层附着到隔板上，其中 分离器具有沿着切割带的外周形成的切口，并且切割深度为隔板的厚度的至多。。

公开(公告)号：US08513816B2

公开(公告)日：2013-08-20

申请号：US13173226

申请日：2011-06-30

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L23/48 ,  H01L21/50 ,  C09K5/00 ,  B32B7/12 ,  B32B3/00

CPC分类号： C08K3/22 ,  C08K2201/001 ,  C08K2201/005 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/295 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2224/83022 ,  H01L2224/83102 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/24355 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

摘要： The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on the back surface of a semiconductor element to be flip chip-connected onto an adherend, the film containing a resin and a thermoconductive filler, in which the content of the thermoconductive filler is at least 50% by volume of the film, and the thermoconductive filler has an average particle size relative to the thickness of the film of at most 30% and has a maximum particle size relative to the thickness of the film of at most 80%.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，其将被设置在半导体元件的背面上以便倒装芯片连接到被粘物上，该薄膜含有树脂和导热填料，其中 导电填料的含量至少为膜的50体积％，并且导热填料相对于膜厚度的平均粒径为至多30％，并且具有相对于膜的厚度的最大粒径 电影最多80％。

公开(公告)号：US20120028380A1

公开(公告)日：2012-02-02

申请号：US13192530

申请日：2011-07-28

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L21/78 ,  B32B3/00 ,  B32B37/00 ,  H01L21/66

CPC分类号： H01L21/6836 ,  B32B5/022 ,  B32B5/028 ,  B32B7/12 ,  B32B15/08 ,  B32B25/08 ,  B32B25/12 ,  B32B25/14 ,  B32B25/18 ,  B32B27/08 ,  B32B27/10 ,  B32B27/12 ,  B32B27/281 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B29/002 ,  B32B37/12 ,  B32B2250/44 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2307/306 ,  B32B2307/414 ,  B32B2307/514 ,  B32B2307/54 ,  B32B2307/732 ,  B32B2457/14 ,  H01L21/78 ,  H01L22/20 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01L2924/014 ,  Y10T156/10 ,  Y10T428/24355

摘要： The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of the dicing tape, in which the dicing tape has a haze of at most 45%.

摘要翻译： 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，包括：具有凹凸形成面的基材和层叠在基材上的粘合剂层的切割带，以及用于 半导体背表面层叠在切割带的压敏粘合剂层上，其中切割带的雾度为至多45％。

公开(公告)号：US20090221215A1

公开(公告)日：2009-09-03

申请号：US12394762

申请日：2009-02-27

申请人： Noriyoshi Kawashima ,  Fumiteru Asai

发明人： Noriyoshi Kawashima ,  Fumiteru Asai

IPC分类号： B32B7/12 ,  B24B1/00

CPC分类号： H01L21/304 ,  C09J7/29 ,  C09J2203/326 ,  C09J2423/006 ,  C09J2431/006 ,  C09J2433/00 ,  C09J2433/006 ,  H01L21/6835 ,  H01L2221/6834 ,  Y10T428/28

摘要： The invention provides an adhesive sheet for grinding a back surface of a semiconductor wafer, which is to be adhered to a circuit forming surface of the semiconductor wafer when the back surface of the semiconductor wafer is ground, in which the adhesive sheet contains an adhesive layer, an intermediate layer and a substrate in this order from the circuit forming surface side, the intermediate layer has a JIS-A hardness of more than 55 to less than 80, and the intermediate layer has a thickness of 300 to 600 μm. Furthermore, the invention also provides a method for grinding a back surface of a semiconductor wafer, including adhering the above-mentioned adhesive sheet to a circuit forming surface of the semiconductor wafer, followed by grinding the back surface of the semiconductor wafer.

摘要翻译： 本发明提供了一种用于研磨半导体晶片的背面的粘合片，当半导体晶片的背面被研磨时，半导体晶片的后表面将粘附到半导体晶片的电路形成表面，其中粘合片含有粘合层 ，中间层和基板，从电路形成表面侧开始，中间层的JIS-A硬度大于55至小于80，中间层的厚度为300-600μm。 此外，本发明还提供了一种用于研磨半导体晶片的背面的方法，包括将上述粘合片粘合到半导体晶片的电路形成表面，随后研磨半导体晶片的背表面。

公开(公告)号：US07156669B2

公开(公告)日：2007-01-02

申请号：US10936946

申请日：2004-09-09

申请人： Fumiteru Asai ,  Masato Noro

发明人： Fumiteru Asai ,  Masato Noro

IPC分类号： H01R9/09

CPC分类号： H01R13/2414 ,  G01R1/0735 ,  G01R1/07371 ,  G01R3/00 ,  H01L21/486 ,  H01L23/49827 ,  H01L24/28 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/81101 ,  H01L2224/838 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

摘要： The present invention provides an anisotropic conductive film for testing an electronic component, which comprises a film substrate comprising an insulating resin and plural conductive paths insulated from each other and penetrating the film substrate in the thickness direction, preferably, an anisotropic conductive film wherein the plural conductive paths are disposed in a houndstooth check pattern and the distance between conductive paths between adjacent rows of conductive paths is smaller than the distance between conductive paths within a row of conductive paths. In another preferable embodiment, the insulating resin comprises a naphthalene skeleton epoxy resin crosslinked with a phenol resin and an acrylic rubber, and both ends of the plural conductive paths are exposed on both the front and the back surfaces of the film substrate.

摘要翻译： 本发明提供了一种用于电子部件测试的各向异性导电膜，其包括具有绝缘树脂的薄膜基板和彼此绝缘并且在厚度方向上穿透薄膜基板的多个导电路径，优选为各向异性导电膜，其中多个 导电路径被设置在冗长的支路图案中，并且相邻行导电路径之间的导电路径之间的距离小于一行导电路径内的导电路径之间的距离。 在另一个优选的实施方案中，绝缘树脂包括用酚醛树脂和丙烯酸橡胶交联的萘骨架环氧树脂，并且多个导电路径的两端都暴露在膜基材的前表面和后表面上。

公开(公告)号：US08722517B2

公开(公告)日：2014-05-13

申请号：US13088738

申请日：2011-04-18

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/78 ,  H01L23/544 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/28 ,  H01L2924/00

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

摘要翻译： 本发明提供了一种用于半导体背面的切割带集成膜，包括用于倒装芯片型半导体背表面的膜，用于保护连接到被粘物上的半导体元件倒装芯片的后表面和切割带，切割带 包括基材和设置在基材上的压敏粘合剂层，在压敏粘合剂层上形成用于倒装芯片型半导体背表面的膜，其中压敏粘合剂层是可辐射固化压力 敏感粘合剂层，其通过用辐射线照射而降低了对于倒装芯片型半导体背表面的膜的压敏粘合力。