公开(公告)号：US06552385B2

公开(公告)日：2003-04-22

申请号：US09756082

申请日：2001-01-08

申请人： Gerhard Beitel ,  Martin Franosch ,  Thomas Peter Haneder ,  Gerrit Lange ,  Hans Reisinger ,  Herbert Schäfer ,  Stephan Schlamminger ,  Hermann Wendt

发明人： Gerhard Beitel ,  Martin Franosch ,  Thomas Peter Haneder ,  Gerrit Lange ,  Hans Reisinger ,  Herbert Schäfer ,  Stephan Schlamminger ,  Hermann Wendt

IPC分类号： H01L27108

CPC分类号： H01L28/56 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691

摘要： A DRAM capacitor is described that contains a BaSrTiO3 (BST) dielectric. The dielectric has a three-layer structure enabling the formation of a potential trough in which electrons can be permanently trapped.

摘要翻译： 描述了包含BaSrTiO 3（BST）电介质的DRAM电容器。 该电介质具有能够形成电子槽的三层结构，其中电子可以永久性地被捕获。

公开(公告)号：US08102052B2

公开(公告)日：2012-01-24

申请号：US13026326

申请日：2011-02-14

申请人： Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

发明人： Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661

摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

摘要翻译： 本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。 在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。 单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。 沉积包括形成两个或更多个子层。 可以为每个单独的子层改变工艺参数以优化沉积特性。

公开(公告)号：US20060191868A1

公开(公告)日：2006-08-31

申请号：US11346605

申请日：2006-02-02

申请人： Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann

IPC分类号： B44C1/22 ,  H01L21/302 ,  C23F1/00

CPC分类号： B81C1/00539 ,  B81B2203/0127

摘要： In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical treatment agent through the opening for the removal of the sacrificial material, wherein a mechanical vibration is generated in the wet-chemical treatment agent or in the wet-chemical treatment agent and the material structure during the contacting of the sacrificial material with the wet-chemical treatment agent.

摘要翻译： 在用于在材料结构中湿化学去除牺牲材料的本发明的方法中，首先提供材料结构，其中材料结构具有处理区域，其中牺牲材料可通过开口接近。 随后，牺牲材料通过用于去除牺牲材料的开口与湿化学处理剂接触，其中在湿化学处理剂或湿化学处理剂中产生机械振动， 在牺牲材料与湿化学处理剂接触期间的材料结构。

公开(公告)号：US20050148205A1

公开(公告)日：2005-07-07

申请号：US10821798

申请日：2004-04-09

申请人： Martin Franosch ,  Andreas Meckes ,  Klaus-Gunter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Klaus-Gunter Oppermann

IPC分类号： H03H3/02 ,  H03H3/08 ,  H03H9/10 ,  H01L21/00

CPC分类号： B81C1/00333 ,  B81C2203/0136 ,  H03H3/02 ,  H03H3/08 ,  H03H9/105 ,  H03H9/1092 ,  Y10S156/93 ,  Y10S438/976 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T29/49798 ,  Y10T156/1082 ,  Y10T156/11

摘要： In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first portion covering a first area of the substrate including the device and a second portion extending from the first portion into a second area of the substrate including no device. Then a first cover layer is deposited that encloses the sacrificial structure such that the second portion of the sacrificial structure is at least partially exposed. Then the sacrificial structure is removed, and the structure formed by the removal of the sacrificial structure is closed.

摘要翻译： 在用于生产用于形成在衬底中的器件的保护罩的方法中，首先在衬底上产生牺牲结构，其中牺牲结构包括覆盖包括该器件的衬底的第一区域的第一部分和延伸 从第一部分到不包括器件的衬底的第二区域。 然后沉积包围牺牲结构的第一覆盖层，使得牺牲结构的第二部分至少部分地暴露。 然后去除牺牲结构，并且通过去除牺牲结构形成的结构是封闭的。

公开(公告)号：US08329532B2

公开(公告)日：2012-12-11

申请号：US13314595

申请日：2011-12-08

申请人： Herbert Schaefer ,  Martin Franosch ,  Thomas Meister ,  Josef Boeck

发明人： Herbert Schaefer ,  Martin Franosch ,  Thomas Meister ,  Josef Boeck

IPC分类号： H01L21/8238

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661

摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

公开(公告)号：US08148055B2

公开(公告)日：2012-04-03

申请号：US11771898

申请日：2007-06-29

申请人： Klaus-Guenter Oppermann ,  Martin Franosch

发明人： Klaus-Guenter Oppermann ,  Martin Franosch

IPC分类号： G03F7/32 ,  G03F7/42

CPC分类号： G03F7/325 ,  G03F7/322 ,  G03F7/40

摘要： A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.

摘要翻译： 用于显影光致抗蚀剂的方法包括将第一显影剂施加到光致抗蚀剂以去除光致抗蚀剂的非交联区域，以及将第二显影剂施加到光致抗蚀剂以除去光致抗蚀剂的剩余非交联区域，其中第一 开发者和第二个开发者的组成不同。

公开(公告)号：US07745321B2

公开(公告)日：2010-06-29

申请号：US11972793

申请日：2008-01-11

申请人： Alfred Martin ,  Barbara Hasler ,  Martin Franosch ,  Klaus-Guenter Oppermann

发明人： Alfred Martin ,  Barbara Hasler ,  Martin Franosch ,  Klaus-Guenter Oppermann

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H05K3/3452 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06136 ,  H01L2224/10125 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/11332 ,  H01L2224/11334 ,  H01L2224/11422 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/8109 ,  H01L2224/81205 ,  H01L2224/8123 ,  H01L2224/81815 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K3/3484 ,  H05K2201/0989 ,  H05K2201/2081 ,  H05K2203/043 ,  H01L2924/00014 ,  H01L2224/05552

摘要： An integrated circuit that comprises a substrate and a structured layer on the substrate. The structured layer comprises an opening to the substrate, a first field and a second field on the substrate, wherein the first field and the second field, at least in part, overlap with the opening. The integrated circuit further comprises a first material in the area of the first field and a second material in the area of the second field. The first material impedes a wetting by a solder material, and the second provides a wetting by the solder material.

摘要翻译： 一种集成电路，包括衬底和衬底上的结构化层。 结构化层包括到基板的开口，在基板上的第一场和第二场，其中第一场和第二场至少部分地与开口重叠。 集成电路还包括第一场区域中的第一材料和第二场区域中的第二材料。 第一种材料阻碍焊料材料的润湿，第二种材料通过焊料材料而被润湿。

公开(公告)号：US07728485B2

公开(公告)日：2010-06-01

申请号：US12130756

申请日：2008-05-30

申请人： Martin Handtmann ,  Martin Franosch

发明人： Martin Handtmann ,  Martin Franosch

IPC分类号： H01L41/053 ,  H03H9/02 ,  H01L41/22 ,  H04R17/10 ,  C23F1/00

CPC分类号： H03H9/174 ,  H03H9/0207 ,  H03H9/02125 ,  H03H9/172 ,  H03H9/175 ,  H03H9/588 ,  H03H9/589 ,  Y10T29/42

摘要： A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.

摘要翻译： BAW器件包括具有表面区域的半导体衬底，形成在表面区域上的绝缘层和由第一和第二电极夹在中间的压电层，其中第二电极形成在绝缘层上。 执行表面区域，使得基板和第二电极之间的电容的电压依赖性被基本上抑制。

公开(公告)号：US07692317B2

公开(公告)日：2010-04-06

申请号：US11864448

申请日：2007-09-28

申请人： Martin Franosch ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

IPC分类号： H01L23/28

CPC分类号： B81C1/00293 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/0271 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10S438/977

摘要： Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.

摘要翻译： 用于容纳微机械结构的装置，以及用于制造外壳的方法。 该装置具有基板，其上形成有微机械结构的主侧面，围绕微机械结构的光致抗蚀剂材料结构，与基板和光刻胶材料结构之间的基板一起形成空腔，其中空腔分离 微机械结构和光致抗蚀剂材料结构并具有开口，以及用于封闭开口以封闭空腔的封闭件。

公开(公告)号：US20100013032A1

公开(公告)日：2010-01-21

申请号：US12174359

申请日：2008-07-16

申请人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

发明人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

IPC分类号： H01L29/84 ,  H01L21/60

CPC分类号： H01L23/498 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/315 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H03H9/1007 ,  H03H9/105 ,  H03H9/1085 ,  H01L2924/014 ,  H01L2224/05099

摘要： A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a component area on a first main surface of the first substrate, and wherein first contact pads are arranged outside of the component area, forming an open top frame structure around the component area on the first main surface of the first substrate, providing a second substrate having second contact pads, arranged symmetrically to the first contact pads and electrically and mechanically connecting the first main surface of the first substrate with the first main surface of the second substrate, so that the frame structure and the second substrate from a cavity or recess around the electronic component on the first substrate.

摘要翻译： 一种用于在装置封装中容纳电子部件的方法，包括提供第一基板，其中所述电子部件布置在所述第一基板的第一主表面上的部件区域中，并且其中第一接触焊盘布置在所述部件区域的外部， 在所述第一基板的所述第一主表面上的所述部件区域周围形成开放的顶部框架结构，提供具有第二接触焊盘的第二基板，所述第二接触焊盘对称地布置在所述第一接触焊盘上，并且将所述第一基板的所述第一主表面与 第二基板的第一主表面，使得框架结构和第二基板来自第一基板上的电子部件周围的空腔或凹部。