公开(公告)号：US20100267199A1

公开(公告)日：2010-10-21

申请号：US12682256

申请日：2008-10-07

申请人： Keiichi Hatakeyama ,  Yuuki Nakamura

发明人： Keiichi Hatakeyama ,  Yuuki Nakamura

IPC分类号： H01L21/50 ,  H01L21/302 ,  B32B5/00

CPC分类号： H01L21/67132 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B28D5/0052 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10156 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The method for producing a semiconductor chip with an adhesive film of the present invention comprises steps of: preparing a laminate in which a semiconductor wafer, an adhesive film for a semiconductor and a dicing tape are laminated in that order, the adhesive film for a semiconductor having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load, and the semiconductor wafer having a reformed section for dividing the semiconductor wafer into the plurality of semiconductor chips, which is formed by irradiating with laser light; dividing the semiconductor wafer into the plurality of semiconductor chips without dividing the adhesive film for a semiconductor by expanding the dicing tape in a direction in which the plurality of semiconductor chips are each separated; and dividing the adhesive film for a semiconductor by picking up the plurality of semiconductor chips in a laminating direction of the laminate, thereby preparing a semiconductor chip with an adhesive film.

摘要翻译： 本发明的具有粘合膜的半导体芯片的制造方法包括以下步骤：制备半导体晶片，半导体用粘合膜和切割带依次层叠的层叠体，半导体用粘接膜 厚度为1〜15μm，断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％，半导体晶片具有重整部分 用于将半导体晶片分成通过用激光照射形成的多个半导体芯片; 通过在多个半导体芯片分离的方向上扩展切割带，将半导体晶片分割成多个半导体芯片，而不分割半导体用粘合膜; 并且通过在层叠体的层压方向上拾取多个半导体芯片来分割半导体用粘合膜，由此制备具有粘合剂膜的半导体芯片。

公开(公告)号：US20100120229A1

公开(公告)日：2010-05-13

申请号：US12594634

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/78 ,  B32B7/10

CPC分类号： C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

摘要翻译： 提供了一种允许以高产率从半导体晶片获得半导体芯片的方法，同时充分抑制了芯片裂纹和毛刺的产生。 制造半导体芯片的方法包括制备具有半导体晶片的层叠体，半导体用粘合膜和切割带，其顺序层叠，将半导体晶片划分成多个半导体芯片，并由半导体形成沟槽 使得至少一部分用于半导体的粘合膜在其厚度方向上保持未切割，并且在使多个半导体芯片分开的方向上伸出切割带的步骤，以分离用于 沿着凹口的半导体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。

公开(公告)号：US08232185B2

公开(公告)日：2012-07-31

申请号：US12594634

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/46 ,  H01L21/78

CPC分类号： C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

摘要翻译： 提供了一种允许以高产率从半导体晶片获得半导体芯片的方法，同时充分抑制了芯片裂纹和毛刺的产生。 制造半导体芯片的方法包括制备具有半导体晶片的层叠体，半导体用粘合膜和切割带，其顺序层叠，将半导体晶片划分成多个半导体芯片，并由半导体形成沟槽 使得至少一部分用于半导体的粘合膜在其厚度方向上保持未切割，并且在使多个半导体芯片分开的方向上伸出切割带的步骤，以分离用于 沿着凹口的半导体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。

公开(公告)号：US20110193244A1

公开(公告)日：2011-08-11

申请号：US13025783

申请日：2011-02-11

申请人： Takashi MASUKO ,  Keisuke Ookubo ,  Keiichi Hatakeyama ,  Masami Yusa

发明人： Takashi MASUKO ,  Keisuke Ookubo ,  Keiichi Hatakeyama ,  Masami Yusa

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/6835 ,  C09J7/10 ,  C09J7/35 ,  C09J2201/36 ,  C09J2463/00 ,  C09J2479/08 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2221/68395 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83856 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00014

摘要： An object of the present invention is to provide a die-adhering adhesive film which can be laminated on a back of a wafer at a temperature lower than a softening temperature of a protecting tape for an ultra-thin wafer, or a dicing tape to be laminated, can reduce a thermal stress such as warpage of a wafer, can simplify a step of manufacturing a semiconductor device, and is excellent in heat resistance and humidity resistance reliance, an adhesive sheet in which the adhesive film and a dicing tape are laminated, as well as a semiconductor device.

摘要翻译： 本发明的目的是提供一种芯片粘附粘合剂膜，其可以在低于超薄晶片的保护带的软化温度或切割胶带的温度下层压在晶片的背面上 可以降低晶片的翘曲等热应力，能够简化半导体装置的制造工序，耐热性和耐湿性依赖性优异，粘贴薄膜和切割胶带的粘合片层叠， 以及半导体器件。

公开(公告)号：US20100112783A1

公开(公告)日：2010-05-06

申请号：US12594847

申请日：2008-03-31

申请人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

发明人： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC分类号： H01L21/78 ,  B32B7/12 ,  C08G77/26 ,  C08L83/08

CPC分类号： C09J183/10 ,  C08G73/106 ,  C08G77/26 ,  C08G77/452 ,  C09D183/08 ,  C09J179/08 ,  C09J183/08 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/296 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/2826 ,  Y10T428/2896 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4′-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below.

摘要翻译： 提供了一种用于半导体的粘合膜，其可以在低温下附着到半导体晶片，并且允许从半导体晶片以高产率获得半导体芯片，同时充分抑制芯片裂纹和毛刺的产生。 半导体用粘合膜包括聚酰亚胺树脂，其可以通过以下化学式（I）表示的含有4,4'-氧联二邻苯二甲酸二酐的四羧酸二酐和由以下通式（II）表示的含有硅氧烷二胺的二胺 ），并且可以在100℃或更低温度下连接到半导体晶片。

公开(公告)号：US20100003771A1

公开(公告)日：2010-01-07

申请号：US12306285

申请日：2007-06-20

申请人： Akira Nagai ,  Masaaki Yasuda ,  Keiichi Hatakeyama ,  Tetsuya Enomoto

发明人： Akira Nagai ,  Masaaki Yasuda ,  Keiichi Hatakeyama ,  Tetsuya Enomoto

IPC分类号： H01L21/60 ,  H01L21/301 ,  H01L21/683 ,  C08L63/00

CPC分类号： H01L21/6835 ,  H01L21/67092 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2224/83885 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： To provide a method of manufacturing semiconductor devices, the method being capable of efficiently obtaining a singulated semiconductor chip upon which an adhesive is adhered and also capable of excellently bonding a semiconductor chip to a wiring substrate, and provide an adhesive film. A layered product 60 in which a dicing tape 9, an adhesive layer 3, and a semiconductor wafer 6 are stacked in this order so that a circuit surface 6a of the semiconductor wafer 6 may face the dicing tape 9 side. A cutting position is recognized by recognizing a circuit pattern P in the circuit surface 6a from a rear surface 6b of the semiconductor wafer 6. At least the semiconductor wafer 6 and the adhesive layer 3 are cut in the thickness direction of the layered product 60. The dicing tape 9 is cured to peel off the dicing tape 9 and the adhesive layer 3. A projection electrode 4 of a semiconductor chip 26 is aligned with a wiring 12 of a wiring substrate 40. The wiring substrate 40 and the semiconductor chip 26 are bonded via an adhesive layer 23 so that the wiring 12 and the projection electrode 4 may be electrically connected to each other.

摘要翻译： 为了提供一种制造半导体器件的方法，该方法能够有效地获得附着有粘合剂的单片半导体芯片，并且还能够将半导体芯片优良地接合到布线基板，并且提供粘合膜。 依次层叠有切割带9，粘合层3和半导体晶片6的层叠体60，使半导体晶片6的电路面6a面向切割带9侧。 通过从半导体晶片6的后表面6b识别电路表面6a中的电路图案P来识别切割位置。至少半导体晶片6和粘合剂层3在层叠体60的厚度方向上被切割。 将切割胶带9固化以剥离切割胶带9和粘合剂层3.半导体芯片26的投影电极4与布线基板40的布线12对准。布线基板40和半导体芯片26是 通过粘合剂层23粘合，使得布线12和突起电极4可以彼此电连接。

公开(公告)号：US20070098995A1

公开(公告)日：2007-05-03

申请号：US10560073

申请日：2004-06-10

申请人： Takashi Masuko ,  Keisuke Ookubo ,  Keiichi Hatakeyama ,  Masami Yusa

发明人： Takashi Masuko ,  Keisuke Ookubo ,  Keiichi Hatakeyama ,  Masami Yusa

IPC分类号： B32B27/00 ,  C08L63/00 ,  C08L79/08 ,  B32B37/00

CPC分类号： H01L21/6835 ,  C09J7/10 ,  C09J7/35 ,  C09J2201/36 ,  C09J2463/00 ,  C09J2479/08 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2221/68395 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83856 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00014

摘要： An object of the present invention is to provide a die-adhering adhesive film which can be laminated on a back of a wafer at a temperature lower than a softening temperature of a protecting tape for an ultra-thin wafer, or a dicing tape to be laminated, can reduce a thermal stress such as warpage of a wafer, can simplify a step of manufacturing a semiconductor device, and is excellent in heat resistance and humidity resistance reliance, an adhesive sheet in which the adhesive film and a dicing tape are laminated, as well as a semiconductor device.

摘要翻译： 本发明的目的是提供一种芯片粘附粘合剂膜，其可以在低于超薄晶片的保护带的软化温度或切割胶带的温度下层压在晶片的背面上 可以降低晶片的翘曲等热应力，能够简化半导体装置的制造工序，耐热性和耐湿性依赖性优异，粘贴薄膜和切割胶带的粘合片层叠， 以及半导体器件。