利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

37 条记录 (耗时 0.031 秒)

    Semiconductor device
    21.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09312372B2

    公开(公告)日：2016-04-12

    申请号：US14766023

    申请日：2013-02-13

    申请人： Keisuke Kimura ,  Satoru Kameyama

    发明人： Keisuke Kimura ,  Satoru Kameyama

    IPC分类号： H01L29/73 ,  H01L29/739 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

    CPC分类号： H01L29/7397 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095

    摘要： A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction.

    摘要翻译： 提出了在半导体衬底上形成至少包含IGBT区域的元件区域的半导体器件。 IGBT区域包括：集电极层; 漂移层 身体层 位于从所述半导体衬底的前表面延伸到所述漂移层的沟槽内的栅电极; 发射极层; 以及具有比体层更高的杂质浓度的接触层。 在半导体器件中，假设x方向是沟槽沿着半导体衬底的前表面延伸的方向，并且ay方向是沿着半导体衬底的前表面与x方向正交的方向，距离 沿x方向到发射极层的接触层大于在y方向上从接触层到沟槽的距离。

    Semiconductor device
    22.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09041053B2

    公开(公告)日：2015-05-26

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    Overhead scanner
    23.
    发明授权
    Overhead scanner 有权
    架空扫描仪

    公开(公告)号：US08736918B2

    公开(公告)日：2014-05-27

    申请号：US13464742

    申请日：2012-05-04

    申请人： Keisuke Kimura

    发明人： Keisuke Kimura

    IPC分类号： H04N1/04

    CPC分类号： H04N1/00535 ,  H04N1/00814 ,  H04N1/00997 ,  H04N1/193 ,  H04N2201/0436 ,  H04N2201/0444

    摘要： An overhead scanner includes a main body, a rotation unit supported by the main body and being rotatable around a rotation axis, an imaging unit mounted on the rotation unit and is configured to read a medium placed on a placement surface below the rotation unit, a light source that irradiates the medium with light, a driving unit that moves the rotation unit around the rotation axis toward a placement side, where the medium is placed, and a posture change detecting unit that detects posture change of the main body. When it is determined that the main body falls down based on the posture change detected, while the rotation unit is located at a readable position for reading the medium, the driving unit moves the rotation unit toward the standby position where the rotation unit is located when the imaging unit does not read the medium.

    摘要翻译： 顶置式扫描仪包括：主体，由主体支撑并可围绕旋转轴旋转的旋转单元;安装在旋转单元上的成像单元，用于读取放置在旋转单元下方的放置表面上的介质; 用光照射介质的光源;驱动单元，其使旋转单元绕旋转轴线朝向放置介质的放置侧移动;以及姿势变化检测单元，其检测主体的姿势变化。 当确定主体基于检测到的姿态变化而下降时，当旋转单元位于用于读取介质的可读位置时，驱动单元将旋转单元朝向旋转单元所在的待机位置移动， 成像单元不读介质。

    Semiconductor device
    30.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09153575B2

    公开(公告)日：2015-10-06

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06

    CPC分类号： H01L27/0664 ,  H01L29/0646 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    摘要翻译： 当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面，并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。