公开(公告)号：US20210404090A1

公开(公告)日：2021-12-30

申请号：US17467979

申请日：2021-09-07

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA

IPC分类号： C30B29/40 ,  H01L21/02 ,  C30B25/18

摘要： Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3.

公开(公告)号：US20210404089A1

公开(公告)日：2021-12-30

申请号：US17467895

申请日：2021-09-07

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA

IPC分类号： C30B29/40 ,  H01L21/02 ,  C30B25/18

摘要： Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, or a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

公开(公告)号：US20210355602A1

公开(公告)日：2021-11-18

申请号：US17443828

申请日：2021-07-28

申请人： NGK INSULATORS, LTD.

发明人： Hiroshi FUKUI ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC分类号： C30B25/18 ,  C30B29/40 ,  C30B29/16 ,  C30B29/60

摘要： Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

公开(公告)号：US20210301422A1

公开(公告)日：2021-09-30

申请号：US17303967

申请日：2021-06-11

申请人： NGK INSULATORS, LTD.

发明人： Risa MIYAKAZE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE

IPC分类号： C30B29/36 ,  C30B23/02

摘要： A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.

公开(公告)号：US20180244579A1

公开(公告)日：2018-08-30

申请号：US15903146

申请日：2018-02-23

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kiyoshi MATSUSHIMA ,  Kei SATO ,  Tsutomu NANATAKI

IPC分类号： C04B35/115 ,  C04B35/645

摘要： A method for producing a transparent alumina sintered body according to the present invention includes (a) a step of preparing an alumina raw material powder containing a plate-like alumina powder having an aspect ratio of 3 or more and a fine alumina powder having an average particle diameter smaller than that of the plate-like alumina powder so that, when a mixing ratio of the plate-like alumina powder to the fine alumina powder in terms of mass ratio is assumed to be T:(100−T), T is 0.001 or more and less than 1, and so that a mass ratio R1 of F relative to A1 in the alumina raw material powder is less than 15 ppm; (b) a step of forming a raw material for forming containing the alumina raw material powder into a compact; and (c) a step of sintering the compact so as to obtain a transparent alumina sintered body.

公开(公告)号：US20170174524A1

公开(公告)日：2017-06-22

申请号：US15446539

申请日：2017-03-01

申请人： NGK INSULATORS, LTD.

发明人： Hiroshi FUKUI ,  Kei SATO ,  Morimichi WATANABE ,  Tsutomu NANATAKI

IPC分类号： C01F7/02 ,  C30B33/00 ,  C30B1/10 ,  C30B29/20 ,  C01F7/30 ,  C30B1/02

CPC分类号： C01F7/021 ,  C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2004/03 ,  C01P2004/22 ,  C01P2004/24 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80 ,  C04B35/111 ,  C04B35/115 ,  C04B35/6261 ,  C04B35/62675 ,  C04B2235/3217 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/787 ,  C30B1/026 ,  C30B1/10 ,  C30B29/20 ,  C30B33/00

摘要： A plate-like alumina powder production method of the present invention comprises placing a transition alumina and a fluoride in a container such that the transition alumina and the fluoride do not come into contact with each other and then performing heat treatment to obtain a plate-like α-alumina powder. The transition alumina is preferably at least one selected from the group consisting of gibbsite, boehmite, and γ-alumina. It is preferable that the amount of the fluoride used is set such that the percentage ration of F in the fluoride to the transition alumina is 0.017% by mass or more. The container preferably has a volume such that a value obtained by dividing the mass of F in the fluoride by the volume of the container is 6.5×10−5 g/cm3 or more. The heat treatment is preferably performed at the temperature of 750 to 1,650° C.

公开(公告)号：US20170053801A1

公开(公告)日：2017-02-23

申请号：US15346831

申请日：2016-11-09

申请人： NAGOYA INSTITUTE OF TECHNOLOGY ,  NGK INSULATORS, LTD.

发明人： Masaki TANEMURA ,  Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C14/58 ,  C23C14/22 ,  C23C14/08

CPC分类号： H01L21/02554 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/22 ,  C23C14/325 ,  C23C14/5806 ,  H01J37/32055 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02631

摘要： There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.

摘要翻译： 提供了能够稳定地形成p型氧化锌膜的制造方法，并且也适合于扩大膜的面积。 根据本发明的p型氧化锌膜的制造方法包括以下步骤：将含有锌源和基板的靶放置在含有氮源和氧源的气体气氛中，气体压力为0.1 Pa至100Pa，并将靶暴露于电弧放电，从而在衬底上形成含有锌和氧的前体膜; 并在氧化气氛中退火前体膜，由此形成p型氧化锌膜。

公开(公告)号：US20160172541A1

公开(公告)日：2016-06-16

申请号：US15016722

申请日：2016-02-05

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI ,  Katsuhiro IMAI ,  Tomohiko SUGIYAMA ,  Takashi YOSHINO ,  Yukihisa TAKEUCHI ,  Kei SATO

IPC分类号： H01L33/32 ,  H01L33/00 ,  C30B29/40 ,  C30B19/12 ,  C30B9/00 ,  C30B25/20 ,  H01L33/16 ,  C30B19/02

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

公开(公告)号：US20140290863A1

公开(公告)日：2014-10-02

申请号：US14246639

申请日：2014-04-07

申请人： NGK Insulators, Ltd.

发明人： Morimichi WATANABE ,  Asumi JINDO ,  Yuji KATSUDA ,  Yosuke SATO ,  Yoshinori ISODA ,  Atsushi WATANABE

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  C04B35/053 ,  C04B35/58 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3865 ,  C04B2235/6586 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/9607 ,  H01L21/6833

摘要： A ceramic member 30 according to the present invention includes a ceramic base 32, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrode 34 disposed on a portion of the ceramic base 32 and containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic base 32 may have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CiKα ray at 2θ=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

摘要翻译： 根据本发明的陶瓷构件30包括陶瓷基底32，其包含其中Al和N成分溶解在作为主相的氧化镁中的固溶体Mg（Al）O（N）和设置在 陶瓷基体32的一部分并且包含氮化物，碳化物，碳氮化物和金属中的至少一种作为电极组分。 陶瓷基底32可以具有使用2θ时的CiKα射线测量的（111），（200）或（220）面的Mg（Al）O（N）的XRD峰; = 36.9〜39,42.9〜44.8， 或分别为氧化镁立方晶体晶体和氮化铝立方晶体晶体之间的62.3〜65.2度。

公开(公告)号：US20220328310A1

公开(公告)日：2022-10-13

申请号：US17805234

申请日：2022-06-03

申请人： NGK Insulators, Ltd.

发明人： Kiyoshi MATSUSHIMA ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC分类号： H01L21/02

摘要： A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×1016 atoms/cm3 to 1×1019 atoms/cm3 inclusive and a concentration of Al is from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 inclusive.