公开(公告)号：US08384212B2

公开(公告)日：2013-02-26

申请号：US13173647

申请日：2011-06-30

申请人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

发明人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

IPC分类号： H01L23/10

CPC分类号： H01L23/427 ,  H01L21/50 ,  H01L21/54 ,  H01L23/045 ,  H01L23/10 ,  H01L2224/45124 ,  H01L2224/48 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.

摘要翻译： 提供具有高传热效应和击穿电压的半导体设备及其制造方法。 半导体设备包括：密封容器; 通过杆周边部连接到密封容器的杆; 以及安装在所述杆的顶表面上的所述密封容器内的半导体芯片。 半导体芯片电连接到设置在杆上的引线，与外壳材料不同的材料的茎周边部分沿密封容器的材料粘结， 并且密封容器中填充有包括乙醇，全氟化碳和氟醚中的至少一种的工作流体。

公开(公告)号：US07737037B2

公开(公告)日：2010-06-15

申请号：US12178151

申请日：2008-07-23

申请人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

发明人： Akira Furuya ,  Nobuyuki Otsuka ,  Hiroshi Okamura ,  Shinichi Ogawa

IPC分类号： H01L21/44

CPC分类号： H01L21/022 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76862 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas.

摘要翻译： 本发明的目的是提供一种包括具有高粘合性和扩散阻挡性的阻挡金属的半导体器件和制造半导体器件的方法。 本发明提供一种半导体器件制造方法，包括在基体上形成由含硅的材料制成的第一层; 在所述第一层上形成含有金属和氮的第二层; 并将第二层暴露于包括还原气体的气氛中从等离子体获得的活性物质。

公开(公告)号：US20060231862A1

公开(公告)日：2006-10-19

申请号：US10542063

申请日：2004-04-14

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L31/00

CPC分类号： H01L29/7371 ,  H01L29/2003 ,  H01L29/7376

摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

摘要翻译： 本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103） 在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层 （307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

公开(公告)号：US06586774B2

公开(公告)日：2003-07-01

申请号：US10021006

申请日：2001-12-19

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US5438952A

公开(公告)日：1995-08-08

申请号：US189147

申请日：1994-01-31

申请人： Nobuyuki Otsuka

发明人： Nobuyuki Otsuka

IPC分类号： H01L21/203 ,  C30B25/02 ,  H01L21/205 ,  H01L21/338 ,  H01L21/363 ,  H01L29/778 ,  H01L29/812 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01S5/00

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/0262

摘要： A method of fabricating a compound semiconductor device includes the steps of supplying an amine-adduct of a compound that contains a constituent element of a crystal layer that forms the semiconductor device, to a substrate on which the semiconductor device is formed, as a source material of the crystal layer, decomposing the amine-adduct in the vicinity of the substrate such that the constituent element is released, and depositing the constituent element on the substrate to cause a growth of the crystal layer on the substrate.

摘要翻译： 一种制备化合物半导体器件的方法包括以下步骤：将含有形成半导体器件的晶体层的构成元素的化合物的胺加合物作为源材料提供给形成有半导体器件的基板 的结晶层，分解基板附近的胺加合物使得构成元素被释放，并将构成元素沉积在基板上，以使晶体层在基板上生长。

公开(公告)号：US07414261B2

公开(公告)日：2008-08-19

申请号：US10542063

申请日：2004-04-14

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L29/06

CPC分类号： H01L29/7371 ,  H01L29/2003 ,  H01L29/7376

摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.

摘要翻译： 本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103） 在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层 （307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

公开(公告)号：US07009216B2

公开(公告)日：2006-03-07

申请号：US10718581

申请日：2003-11-24

申请人： Nobuyuki Otsuka ,  Shigeo Yoshii ,  Toshiya Yokogawa

发明人： Nobuyuki Otsuka ,  Shigeo Yoshii ,  Toshiya Yokogawa

IPC分类号： H01L33/00 ,  H01S3/19

CPC分类号： H01S5/187 ,  H01S5/028 ,  H01S5/105 ,  H01S5/124 ,  H01S5/2201 ,  H01S5/42

摘要： A semiconductor light emitting device of the present invention comprises a n-type InP substrate (1), and a stripe structure (10) formed in the stripe shape on the n-type InP substrate (1) and comprised of a n-type InP lower cladding layer (3), an active layer (4) having a resonator in a direction parallel to the n-type InP substrate (1), and a p-type InP upper cladding layer (5). The stripe structure (10) has a photonic crystal structure (2) with concave portions 9 arranged in rectangular lattice shape, and the direction in which the concave portions (9) of the photonic crystal structure (2) are arranged corresponds with a resonator direction. A stripe-shaped upper electrode (6) is formed on the stripe structure (10) to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate (1).

摘要翻译： 本发明的半导体发光器件包括n型InP衬底（1）和在n型InP衬底（1）上形成为条形的条形结构（10），并且由n型InP衬底 下包层（3），在与n型InP衬底（1）平行的方向上具有谐振器的有源层（4）和p型InP上覆层（5）。 条状结构（10）具有光子晶体结构（2），其具有矩形格子状的凹部9，并且配置有光子晶体结构（2）的凹部（9）的方向与谐振器方向 。 条状上电极（6）形成在条状结构（10）上以沿谐振器方向延伸。 如此构造的本发明的半导体发光器件被配置为沿垂直于n型InP衬底（1）的方向辐射光。

公开(公告)号：US06953954B2

公开(公告)日：2005-10-11

申请号：US10745567

申请日：2003-12-29

申请人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

发明人： Shigeo Yoshii ,  Nobuyuki Otsuka ,  Koichi Mizuno ,  Asamira Suzuki ,  Toshiya Yokogawa

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/80 ,  H01L29/43

CPC分类号： H01L29/1029 ,  H01L29/2003 ,  H01L29/7785

摘要： A plasma oscillation switching device of the present invention comprises semiconductor substrate 101; first barrier layer 103 that is composed of a III-V compound semiconductor and formed on the substrate; channel layer 104 that is composed of a III-V compound semiconductor and formed on the first barrier layer; second barrier layer 105 that is composed of a III-V compound semiconductor and formed on the channel layer; source electrode 107, gate electrode 109 and drain electrode 108 provided on the second barrier layer, wherein the first barrier layer includes n-type diffusion layer 103a, the second barrier layer includes p-type diffusion layer 105a, the band gap of the channel layer is smaller than the band gaps of the first and the second barrier layers, two-dimensional electron gas EG is accumulated at the conduction band at the boundary between the first barrier layer and the channel layer, two-dimensional hole gas HG is accumulated at the valence band at the boundary between the second barrier layer and the channel layer, and these electrodes are formed on the barrier layer through the insulating layer 106.

摘要翻译： 本发明的等离子体振荡切换装置包括半导体基板101， 第一阻挡层103，其由III-V族化合物半导体构成并形成在基板上; 沟道层104，其由III-V族化合物半导体形成并形成在第一阻挡层上; 第二阻挡层105，其由III-V族化合物半导体形成并形成在沟道层上; 源极电极107，栅电极109和漏电极108，其中第一阻挡层包括n型扩散层103a，第二阻挡层包括p型扩散层105a，第二势垒层包括p型扩散层105a， 通道层比第一和第二阻挡层的带隙小，二维电子气体EG在第一阻挡层和沟道层之间的边界处的导带处累积，二维空穴气体HG被积聚 在第二阻挡层和沟道层之间的边界处的价带处，并且这些电极通过绝缘层106形成在阻挡层上。

公开(公告)号：US20050142682A1

公开(公告)日：2005-06-30

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01S5/30 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00 ,  H01L21/336

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

公开(公告)号：US06861679B2

公开(公告)日：2005-03-01

申请号：US10817035

申请日：2004-04-05

申请人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

发明人： Nobuyuki Otsuka ,  Koichi Mizuno ,  Shigeo Yoshii ,  Asamira Suzuki

IPC分类号： H01L29/812 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L31/0328

CPC分类号： H01L29/7785 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462 ,  H01L29/7784

摘要： A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaxIn1−xNyA1−y in which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.

摘要翻译： 根据本发明的异质场效应晶体管包括InP衬底，设置在InP衬底上的沟道层，其中缓冲层设置在InP衬底和沟道层之间，间隔层由具有大于 形成为与沟道层异质连接的沟道层的沟道层和与间隔层相邻形成的载流子供给层，其中沟道层包括由式GaxIn1-xNyA1表示的化合物半导体构成的预定半导体层 -Y，其中A为As或Sb，组成x满足0 <= x <= 0.2，组成y满足0.03 <= Y＆LE; 0.10。