公开(公告)号：US09768343B2

公开(公告)日：2017-09-19

申请号：US14787858

申请日：2014-04-29

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Pawan Kapur ,  Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  B23K26/00 ,  B23K26/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0352 ,  B23K26/0622 ,  B23K101/40 ,  B23K103/00

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/355 ,  B23K2101/40 ,  B23K2103/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: Laser patterning methods utilize a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions to improve cell efficiency by avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

公开(公告)号：US20170243767A1

公开(公告)日：2017-08-24

申请号：US15398681

申请日：2017-01-04

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  H01L21/677 ,  C25F3/12 ,  C25F7/02

CPC classification number: H01L21/67086 ,  C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US09680041B2

公开(公告)日：2017-06-13

申请号：US14578161

申请日：2014-12-19

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  David Xuan-Qi Wang

IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/0468 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/054 ,  H01L31/056

CPC classification number: H01L31/0352 ,  H01L21/00 ,  H01L27/142 ,  H01L31/022458 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0468 ,  H01L31/054 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: A three-dimensional thin-film semiconductor substrate with selective through-holes is provided. The substrate having an inverted pyramidal structure comprising selectively formed through-holes positioned between the front and back lateral surface planes of the semiconductor substrate to form a partially transparent three-dimensional thin-film semiconductor substrate.

公开(公告)号：US20160336465A1

公开(公告)日：2016-11-17

申请号：US14949602

申请日：2015-11-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/068 ,  H01L31/02 ,  H01L31/0352

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

公开(公告)号：US09419165B2

公开(公告)日：2016-08-16

申请号：US13846230

申请日：2013-03-18

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

IPC: H01L31/068 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/056

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.

Abstract translation: 一种制造背接触太阳能电池的方法。 在具有约1微米至100微米范围内的基底厚度的晶体硅背接触太阳能电池基板中形成基极隔离区。 进行晶体硅背接触太阳能电池基板上的物质的脉冲激光烧蚀以形成基底开口，其中所述物质是氧化硅，氮化硅，氧化铝，氮氧化硅或碳化硅中的至少一种。 发射极区域是选择性掺杂的，并且基极区域被选择性掺杂。 为选择性掺杂的基极区域和选择性掺杂的发射极区域形成接触开口。 在选择性掺杂的基极区域和选择性掺杂的发射极区域上形成金属化。

公开(公告)号：US09349887B2

公开(公告)日：2016-05-24

申请号：US13692599

申请日：2012-12-03

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H01L31/0352 ,  G03G21/20

CPC classification number: H01L31/046 ,  G03G21/203 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/042 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/049 ,  H01L31/05 ,  H01L31/0504 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/182 ,  H01L31/1896 ,  H02S40/36 ,  Y02B10/12 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: A three-dimensional thin-film solar cell comprising a three-dimensional thin-film solar cell substrate having a prism array design comprising a plurality dual-aperture unit cells with emitter junction regions and doped base regions. The three-dimensional thin-film solar cell comprises emitter metallization regions and base metallization regions.

Abstract translation: 一种三维薄膜太阳能电池，其包括具有棱镜阵列设计的三维薄膜太阳能电池基板，其包括具有发射极结区域和掺杂基极区域的多个双孔单元电池。 三维薄膜太阳能电池包括发射极金属化区域和基底金属化区域。

公开(公告)号：US20160093763A1

公开(公告)日：2016-03-31

申请号：US14787858

申请日：2014-04-29

Applicant: SOLEXEL, INC.

Inventor： Virendra V. Rana ,  Pawan Kapur ,  Sean M. Seutter ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L31/0352

CPC classification number: H01L31/1864 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/355 ,  B23K2101/40 ,  B23K2103/56 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1868 ,  Y02E10/547

Abstract: The laser patterning methods utilizing a laser absorbent hard mask in combination with wet etching to form patterned solar cell doped regions which may further improve cell efficiency by completely avoiding laser ablation of an underlying semiconductor substrate associated with ablation of an overlying transparent passivation layer.

Abstract translation: 激光图案化方法利用激光吸收硬掩模与湿蚀刻结合形成图案化太阳能电池掺杂区域，其可以通过完全避免与覆盖的透明钝化层的消融相关联的下面的半导体衬底的激光烧蚀来进一步提高电池效率。

公开(公告)号：US20160013335A1

公开(公告)日：2016-01-14

申请号：US14615335

申请日：2015-02-05

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  Sean M. Seutter ,  Pawan Kapur ,  Thom Stalcup ,  David Xuan-Qi Wang ,  George D. Kamian ,  Kamran Manteghi ,  Yen-Sheng Su ,  Pranav Anbalagan ,  Virendra V. Rana ,  Anthony Calcaterra ,  Gerry Olsen ,  Wojciech Worwag

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/1804 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案，将预浸料底板附着到基底电极和发射电极的交错图案上，在预浸料底板上形成孔，其提供对第一层 的导电金属，并且在预浸料背板的背面上沉积第二导电金属层，通过预浸料背板中的孔与第一导电金属层形成电互连。

公开(公告)号：US09214585B2

公开(公告)日：2015-12-15

申请号：US14265331

申请日：2014-04-29

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  Mehrdad M. Moslehi ,  Pawan Kapur ,  Benjamin Rattle ,  Heather Deshazer ,  Solene Coutant

IPC: H01L31/18 ,  H01L31/0445 ,  H01L31/049 ,  H01L33/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/056

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/049 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1896 ,  H01L33/0095 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：US20150349708A1

公开(公告)日：2015-12-03

申请号：US14252750

申请日：2014-04-14

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi

IPC: H02S40/32 ,  H01L31/048 ,  H01L31/05 ,  H02S40/30

CPC classification number: H02S20/26 ,  H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S40/30 ,  H02S40/32 ,  H02S40/34 ,  Y02B10/10 ,  Y02E10/58

Abstract: A solar photovoltaic module laminate for electric power generation is provided. The module comprises a plurality of solar cells embedded within the module laminate and electrically interconnected to form at least one string of electrically interconnected solar cells within said module laminate. And at least one remote-access module switch (RAMS) power electronic circuit embedded within the module laminate electrically interconnected to and powered with said at least one string of electrically interconnected solar cells and serving as a remote-controlled module power delivery gate switch.

Abstract translation: 提供了用于发电的太阳能光伏组件层压板。 模块包括嵌入在模块层叠体内的多个太阳能电池，并且电互连以在所述模块层叠体内形成至少一排电互连的太阳能电池。 并且至少一个远程访问模块开关（RAMS）电力电子电路嵌入在所述模块叠层内，电互连到所述至少一个电互连太阳能电池串并由其供电，并用作遥控模块电力输送门开关。