Abstract:
An electronic device includes a first electronic component and a second electronic. Each electronic component includes a carrier substrate having a back side and a front side, an electronic chip including an integrated optical element, an overmolded transparent block encapsulating the electronic chip above the carrier substrate, and electrical connections between the electronic chip and electrical contacts of the carrier substrate. An overmolded grid encapsulates and holds the first and second electronic components. The grid is configured so that sides of the first and second electronic components are at least partially exposed.
Abstract:
A non-conductive encapsulation cover is mounted on a support face of a support substrate to delimit, with the support substrate, an internal housing. An integrated circuit chip is mounted to the support substrate within the internal housing. A metal pattern is mounted to an internal wall of the non-conductive encapsulation cover in a position facing the support face. At least two U-shaped metal wires are provided within the internal housing, located to a side of the integrated circuit chip, and fixed at one end to the metallic pattern and at another end to the support face.
Abstract:
An integrated circuit chip includes a front face having an electrical connection pad. An overmolded encapsulation block encapsulates the integrated circuit chip and includes a front layer at least partially covering a front face of the integrated circuit chip. A through-hole the encapsulation block is located above the electrical connection pad of the integrated circuit chip. A wall of the through-hole is covered with an inner metal layer that is joined to the front pad of the integrated circuit chip. A front metal layer covers a local zone of the front face of the front layer, with the front metal layer being joined to the inner metal layer to form an electrical connection. The inner metal layer and the front metal layer are attached or anchored to activated additive particles that are included in the material of the encapsulation block.
Abstract:
An optoelectronic device includes an emitter of light rays and a receiver of light rays. The emitter is encapsulated in a transparent block. An opaque conductive layer is applied to a top surface and a side surface of the transparent block. The receiver is mounted to the opaque conductive layer at the top surface. An electrical connection is made between the receiver and the opaque conductive layer. A conductive strip is also mounted to the side surface of the transparent block and isolated from the opaque conductive layer. A further electrical connection is made between the receiver and the conductive strip.
Abstract:
An opaque dielectric carrier and confinement substrate is formed by a stack of layers laminated on each other. The stack includes a solid back layer and a front frame having a peripheral wall and an intermediate partition which delimits two cavities located on top of the solid back layer and on either side of the intermediate partition. Electronic integrated circuit (IC) chips are located inside the cavities and mounted on top of the solid back layer. Each IC chip includes an integrated optical element. Electrical connections are provided between the IC chips and back electrical contacts of the solid back layer. Transparent encapsulation blocks are molded in the cavities to embed the IC chips.
Abstract:
An integrated circuit chip includes a front face having an electrical connection pad. An overmolded encapsulation block encapsulates the integrated circuit chip and includes a front layer at least partially covering a front face of the integrated circuit chip. A through-hole the encapsulation block is located above the electrical connection pad of the integrated circuit chip. A wall of the through-hole is covered with an inner metal layer that is joined to the front pad of the integrated circuit chip. A front metal layer covers a local zone of the front face of the front layer, with the front metal layer being joined to the inner metal layer to form an electrical connection. The inner metal layer and the front metal layer are attached or anchored to activated additive particles that are included in the material of the encapsulation block.
Abstract:
An electronic device is formed by a stack of an integrated circuit chip and an optical plate. The integrated circuit chip includes integrated circuits (such as optical circuits) formed on or in a semiconductor substrate plate. The optical integrated circuits may form an optical sensor. An electrical connection network is provided on the top side of the semiconductor substrate plate. Electrical connection lugs, which are connected to the electrical connection network through electrical connection vias, are mounted on the back side of the semiconductor substrate plate. The vias are through silicon vias situated at a distance from the periphery of the semiconductor substrate plate. The optical plate is configured to allow light radiation to pass to the optical integrated circuits.
Abstract:
A stack of chips is formed by a first integrated-circuit chip and a second integrated-circuit chip. The chips have opposing faces which are separated from each other by an interposed spacer. The spacer is fastened by adhesion to only one of the opposing faces. The opposing faces are fastened to each other by a local adhesive which is separate from spacer.
Abstract:
An electronic system includes a first integrated-circuit chip and a second integrated-circuit chip. A first substrate wafer is positioned between the first and second integrated-circuit chips and configured with a first connection network to make electrical connection to the first integrated-circuit chip. A second substrate wafer, configured with a second connection network to make electrical connection to the second integrated-circuit chip, is positioned facing the first substrate wafer. The connection networks of the first and second substrate wafers are electrically connected through connection structures. A third substrate wafer, including a third connection network, is thermally in contact with the first integrated-circuit chip and electrically connected to the first connection network of the first substrate wafer through further connection structures. The further connection structure may be formed using another substrate wafer.