公开(公告)号：US08138004B2

公开(公告)日：2012-03-20

申请号：US12821201

申请日：2010-06-23

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 该制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

公开(公告)号：US08049157B2

公开(公告)日：2011-11-01

申请号：US12949301

申请日：2010-11-18

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08 ,  H03K17/78 ,  H01J40/14 ,  H04N3/14 ,  H01L31/062

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US07985664B2

公开(公告)日：2011-07-26

申请号：US12627473

申请日：2009-11-30

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US20100330729A1

公开(公告)日：2010-12-30

申请号：US12821201

申请日：2010-06-23

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US20090121119A1

公开(公告)日：2009-05-14

申请号：US12350271

申请日：2009-01-08

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US07492028B2

公开(公告)日：2009-02-17

申请号：US11276036

申请日：2006-02-10

申请人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

发明人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

IPC分类号： H01L27/14

CPC分类号： H01L31/1133 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14687

摘要： A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

摘要翻译： 提供了具有可以抑制静电放电损坏的结构的光传感器。 通常，在光接收区域的整个表面上形成透明电极; 然而，在本发明中，不形成透明电极，并且使用光电转换层的p型半导体层和n型半导体层作为电极。 因此，在根据本发明的光电传感器中，电阻增加可以抑制静电放电损坏。 此外，用作电极的p型半导体层和n型半导体层的位置被保留; 因此，电阻增加，并且可以提高耐受电压。

公开(公告)号：US20080308851A1

公开(公告)日：2008-12-18

申请号：US12078090

申请日：2008-03-27

申请人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01L27/146

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L27/12 ,  H01L27/14618 ,  H01L27/14643 ,  H01L31/02005 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/16 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/0106 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/12043 ,  H01L2924/15787 ,  H01L2224/13099 ,  H01L2924/00015 ,  H01L2924/00

摘要： A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.

摘要翻译： 证明了半导体器件，特别是具有半导体层的光电转换元件。 本发明的光电转换元件在基板上包括光电转换层和电连接到光电转换层的第一和第二电极。 光电转换元件还包括配置有第三和第四电极的布线板。 本发明的特征在于，在第一和第二电极上形成有与导电材料形成合金的接合层。 该接合层改善了第一和第三电极与第二和第四电极之间的接合强度，这有助于防止基板和布线板之间的连接缺陷，从而导致光电转换元件的高可靠性。

公开(公告)号：US07354857B2

公开(公告)日：2008-04-08

申请号：US11206999

申请日：2005-08-19

申请人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

发明人： Hisao Morooka ,  Hiroshi Yamada ,  Kazuo Nishi

IPC分类号： H01L21/44

CPC分类号： C23C16/42 ,  C23C16/505 ,  H01L21/28556 ,  Y02E10/548

摘要： A solar cell comprises a substrate, and a metal electrode layer, a p-i-n junction, and a transparent electrode layer which are successively laminated on the substrate. The p-i-n junction comprises an n layer, an i layer, and a p layer which are laminated in this order. The i layer is made of an amorphous iron silicide film containing hydrogen in accordance with the present invention, and is formed on the n layer by supplying an iron vapor into a plasma of a material gas in which a silane type gas and a hydrogen gas are mixed. In the i layer, dangling bonds of silicon atoms and/or iron atoms are terminated with hydrogen, whereby a number of trap levels which may occur in the amorphous iron silicide film are eliminated.

摘要翻译： 太阳能电池包括依次层压在基板上的基板和金属电极层，p-i-n结和透明电极层。 p-i-n结包括依次层叠的n层，i层和p层。 i层由根据本发明的含有氢的非晶硅化硅膜制成，并且通过将铁蒸气供给到硅烷型气体和氢气的原料气体的等离子体中而形成在n层上 混合 在i层中，硅原子和/或铁原子的悬挂键用氢终止，由此可以消除在非晶硅化铁膜中可能发生的多个陷阱水平。

公开(公告)号：US07335951B2

公开(公告)日：2008-02-26

申请号：US10957747

申请日：2004-10-05

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

IPC分类号： H01L27/01

CPC分类号： H01L31/0203 ,  H01L27/1446 ,  H01L27/14618 ,  H01L31/048 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

公开(公告)号：US20080001148A1

公开(公告)日：2008-01-03

申请号：US11579141

申请日：2005-05-16

申请人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

发明人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

IPC分类号： H01L31/02 ,  H01L21/30 ,  H01L31/04

CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。