Abstract:
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, formed in a region in the opening on the electrode so that an upper surface of the metal layer is at a position lower than an upper surface of the insulating covering layer in a peripheral edge portion of the opening; and a dome-shaped bump containing Sn and Ti, formed in a region in the opening on the under bump metal layer, wherein an end portion of a boundary between the under bump metal layer and the bump is in contact with an inner wall of the opening portion in the insulating covering layer.
Abstract:
A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.
Abstract:
A coating having a layered structure including a palladium layer is provided to a conductor. The highly stable palladium layer is amorphous and contains phosphorus in a concentration ranging from 7.3% by mass to 11.0% by mass. An electronic component may include the conductor coated with the coating. The conductor coated with the coating has superior corrosion resistance and superior reliability in electrical connection with external apparatuses.
Abstract:
An electroconductive substrate, including: a base material; a foundation layer disposed on the base material; a trench formation layer disposed on the foundation layer, and an electroconductive pattern layer including metal plating. A trench including a bottom surface to which the foundation layer is exposed, is formed. The trench is filled with the electroconductive pattern layer. The foundation layer includes a mixed region which is formed from a surface of the foundation layer on the electroconductive pattern layer side towards the inside thereof, and contains metal particles which contain a metal configuring the electroconductive pattern layer, and enter the foundation layer.
Abstract:
Disclosed herein is a coil component that includes a substrate, a coil pattern formed on one surface of the substrate, and a magnetic layer comprising a composite material obtained by dispersing magnetic particles in resin and formed on the one surface of the substrate so as to cover the coil pattern. The coil pattern has a flat shape in which a thickness thereof is smaller than a radial width. Each of the magnetic particles has a flat shape in which a thickness thereof in a direction perpendicular to the one surface of the substrate is smaller than a diameter in a direction parallel to the one surface of the substrate. Some of the magnetic particles exist within a height range of the coil pattern with respect to the one surface of the substrate.
Abstract:
A sheet material includes a resin layer containing a binder and catalyst particles, an electroless plating film on the side of one main surface of the resin layer and including first electroless plating films and a second electroless plating film, and a base material on the side of the other main surface of the resin layer.
Abstract:
A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.
Abstract:
A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.
Abstract:
Disclosed herein is a wiring component that includes a base material and a planar coil pattern formed on the base material. The planar coil pattern includes a coil wiring portion having one end, other end, and first to third connecting positions, the second connecting position being closer to the other end compared with the first connecting position, the third connecting position being closer to the one end compared with the second connecting position; a power-feed wiring portion connected to the first connecting position; and a connection wiring portion that short-circuits the second connecting position and the third connecting position. A cross-section structure of the planar coil pattern has a base resin layer formed on the base material, and a conductive layer formed on the base resin layer.
Abstract:
A method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a smooth surface formation process of forming a smooth surface on the microbump, a lamination process of laminating three or more of the semiconductor chips by overlaying the microbump of one of the semiconductor chips on the microbump of another one of the semiconductor chips, and a bonding process of bonding the semiconductor chips to each other via the microbumps by heating to melt the microbumps, in which in the lamination process, of one of the semiconductor chips and another one of the semiconductor chips, the smooth surface is formed on at least one of the microbump, and one of the microbump contacts another one of the microbump on the smooth surface.