摘要:
A projection lens unit for a pica-projector includes a plurality of plastic lenses and a single glass lens to minimize a change in focal length due to the heat generated inside the pico-projector. The lens array includes: a 1st lens with negative (−) refractive power, a 2nd lens with positive (+) refractive power, a 3rd fens with negative (−) refractive power, a 4th lens with negative (−) refractive power, and a 5th lens with positive (+) refractive power, wherein the 1st to 5th lenses are arranged in order from a screen upon which an image is projected, the 1st to 4th lenses are plastic lenses and the 5th lens is a glass lens.
摘要:
A semiconductor package includes a first semiconductor chip mounted to a substrate, a first encapsulant covering the first semiconductor chip and have first to fourth sidewall surfaces, and a chip stack mounted to the substrate and disposed on the first encapsulant. The chip stack includes a plurality of second semiconductor chips. A second encapsulant covers the chip stack. The second encapsulant may cover the first sidewall surface of the first encapsulant and expose the third sidewall surface of the first encapsulant.
摘要:
A driving circuit of a liquid crystal display includes: a timing controller to output a gate control signal and a data control signal to control driving of a gate driving unit and a data driving unit and to output digital video data; a pair of gate driving units to be alternately driven by using at least one frame as a period to supply gate signals to gate lines of a liquid crystal panel in response to the gate control signal; and a data driving unit to supply pixel signals to data lines of the liquid crystal panel in response to the data control signal. Degradation of characteristics of transistors constituting each gate driver can be prevented.
摘要:
A fuse circuit includes a program unit, a sensing unit and a control unit. The program unit is programmed in response to a program signal, and outputs a program output signal in response to a sensing enable signal. The sensing unit includes a variable resistor unit that has a resistance that varies based on a control signal, and generates a sensing output signal based on the resistance of the variable resistor unit and the program output signal. The control unit generates the control signal having a value changed depending on operation modes, and performs a verification operation with respect to the program unit based on the sensing output signal to generate a verification result. The program unit may be re-programmed based on the verification result.
摘要:
An acid generating agent represented by the following formula (1) or (2) is provided, which is included in chemically amplified resist compositions: wherein in the formula (1) and (2), X represents an unsubstituted or substituted alkyl group having 1 to 20 carbon atoms and selected from alkyl, haloalkyl and alkylsulfonyl, which may have at least one hydrogen atom substituted by an ether group, an ester group, a carbonyl group, an acetal group, a nitrile group, a cyano group, a hydroxyl group, a carboxyl group or an aldehyde group, or represents a perfluoroalkyl group having 1 to 4 carbon atoms; R6 represents an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a heteroatom selected from nitrogen, sulfur, fluorine and oxygen; m is an integer from 0 to 2; and A+ is an organic counterion.
摘要翻译:提供了由下列通式(1)或(2)表示的酸产生剂,其包括在化学放大型抗蚀剂组合物中:其中在式(1)和(2)中,X表示未取代或取代的具有1 20个碳原子,选自烷基,卤代烷基和烷基磺酰基,其可以具有至少一个被醚基取代的氢原子,酯基,羰基,缩醛基,腈基,氰基,羟基 ,羧基或醛基,或者表示碳原子数1〜4的全氟烷基。 R 6表示碳原子数1〜10的烷基,碳原子数1〜10的烷氧基或氮,硫,氟和氧的杂原子。 m为0〜2的整数; 而A +是一种有机的抗衡离子。
摘要:
An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.
摘要:
A vertical NAND flash memory device includes a substrate having a face and a string of serially connected flash memory cells on the substrate. A first flash memory cell is adjacent the face, and a last flash memory cell is remote from the face. The flash memory cells include repeating layer patterns that are stacked on the face, and a pillar that extends through the series of repeating layer patterns. The pillar includes at least one oblique wall. At least two of the series of repeating layer patterns in the string are of different thicknesses. Other vertical microelectronic devices and related fabrication methods are also described.
摘要:
A mobile communication device is provided. The mobile communication device includes a terminal body, and a speaker module located in the terminal body. The speaker module includes an enclosure located in the terminal body, the enclosure defining a chamber therein, and a speaker having a front surface and a rear surface, the speaker being located in the enclosure such that the front surface of the speaker is exposed from the enclosure and the rear surface thereof is positioned within the chamber, to allow a sound generated from the rear surface to resonate within the chamber. A mutual interference between the sound generated from the front side of the sound emission part and the sound emitted from the rear side thereof can be reduced to thereby improve the performance of the middle and low sound.
摘要:
In one embodiment a semiconductor device includes odd contacts and respective odd lines. Spacers are formed on sidewalls of the odd lines and even openings for even lines are formed by performing an etching process. Even contacts are formed in the even openings and then even lines are formed.
摘要:
In a method of forming a layer, a titanium layer and a titanium nitride layer may be successively formed on a first wafer. By-products adhered to the inside of a chamber during the formation of the titanium nitride layer may be removed from the chamber. Processes of forming the titanium layer, forming the titanium nitride layer, and removing the by-products may be repeated relative to a second wafer.