公开(公告)号：US07435999B2

公开(公告)日：2008-10-14

申请号：US11120774

申请日：2005-05-02

申请人： Reiner Windisch ,  Ralph Wirth ,  Walter Wegleiter

发明人： Reiner Windisch ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/387

摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

摘要翻译： 一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。 用于薄膜层的载体被布置在其后侧并与其连接。 在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。 沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

公开(公告)号：US07242034B2

公开(公告)日：2007-07-10

申请号：US10770693

申请日：2004-02-02

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20060145164A1

公开(公告)日：2006-07-06

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20050258444A1

公开(公告)日：2005-11-24

申请号：US11120774

申请日：2005-05-02

申请人： Reiner Windisch ,  Ralph Wirth ,  Walter Wegleiter

发明人： Reiner Windisch ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/387

摘要： A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

摘要翻译： 一种具有薄膜层的光电子半导体芯片，其中形成发射电磁辐射的区域，并且具有将后侧与发射侧连接的发射侧，后侧和侧面。 用于薄膜层的载体被布置在其后侧并与其连接。 在发射侧形成至少一个电前侧接触结构，并且在后侧形成至少一个沟槽。 沟槽限定至少一个基本上不与前侧接触结构重叠的部分区域。

公开(公告)号：US20050090031A1

公开(公告)日：2005-04-28

申请号：US10770693

申请日：2004-02-02

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/20 ,  H01L29/24 ,  H01L31/0304

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20180261648A1

公开(公告)日：2018-09-13

申请号：US15533025

申请日：2015-12-02

申请人： Britta Göötz ,  Walter Wegleiter ,  Stefan Grötsch

发明人： Britta Göötz ,  Walter Wegleiter ,  Stefan Grötsch

IPC分类号： H01L27/15 ,  H01L33/50 ,  H01L33/60 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

CPC分类号： H01L27/156 ,  H01L25/167 ,  H01L33/08 ,  H01L33/382 ,  H01L33/505 ,  H01L33/60

摘要： An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side. The conversion element covers at least one emission field at least partially and is connected to said emission field in a mechanically robust fashion. The underside of the conversion element in the region of the covered emission field juts out from the partitions in a direction away from the main side by no more than 10% of the height of the partitions.

公开(公告)号：US09105771B2

公开(公告)日：2015-08-11

申请号：US13816839

申请日：2011-08-12

申请人： Karl Weidner ,  Hans Wulkesch ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Johann Ramchen

发明人： Karl Weidner ,  Hans Wulkesch ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Johann Ramchen

IPC分类号： H01L31/0232 ,  H01L33/00 ,  H01L33/62 ,  H01L23/00 ,  H01L21/768 ,  H01L33/48

CPC分类号： H01L31/0232 ,  H01L21/76804 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0095 ,  H01L33/48 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0066 ,  H01L2224/82 ,  H01L2924/00

摘要： A method of producing an optoelectronic semiconductor component includes providing a carrier having a top side, an underside situated opposite the top side, and a plurality of connection areas arranged at the top side alongside one another in a lateral direction; applying a plurality of optoelectronic components arranged at a distance from one another in a lateral direction at the top side, the components having a contact area facing away from the carrier; applying protective elements to the contact and connection areas; applying an electrically insulating layer to exposed locations of the carrier, contact areas and protective elements; producing openings in the insulating layer by removing protective elements; and arranging an electrically conductive material on the insulating layer and in the openings, wherein the electrically conductive material connects a contact area to an assigned connection area.

摘要翻译： 制造光电子半导体部件的方法包括提供具有顶侧，与顶侧相对设置的下侧以及沿横向彼此并排布置的多个连接区域的载体; 施加在顶侧沿横向彼此一定距离地布置的多个光电子部件，所述部件具有背离载体的接触区域; 将保护元件施加到触点和连接区域; 将电绝缘层施加到载体，接触区域和保护元件的暴露位置; 通过去除保护元件在绝缘层中产生开口; 以及在所述绝缘层和所述开口中布置导电材料，其中所述导电材料将接触区域连接到所分配的连接区域。

公开(公告)号：US08791548B2

公开(公告)日：2014-07-29

申请号：US12678363

申请日：2008-09-24

申请人： Elmar Baur ,  Walter Wegleiter

发明人： Elmar Baur ,  Walter Wegleiter

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L24/82 ,  H01L24/24 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/24051 ,  H01L2224/24998 ,  H01L2224/82007 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.

摘要翻译： 指定具有对于许多常见应用不是最佳的接触层的半导体芯片。 例如，接触层太薄而不能耐受半导体芯片的工作电流，而不会有相当大的劣化。 还规定了可以集成半导体芯片的光电子部件，从而补偿接触层的次优质量。 在部件中，半导体芯片被施加到载体主体，使得接触层布置在半导体主体的远离载体主体的一侧。 半导体芯片和载体主体至少部分地被电绝缘层覆盖，并且施加到隔离层的电导体横向延伸离开半导体本体并且接触接触层的至少部分表面。 此外，规定了制造组件的有利方法。

公开(公告)号：US20130307004A1

公开(公告)日：2013-11-21

申请号：US13822367

申请日：2011-08-22

申请人： Karl Weidner ,  Johann Ramchen ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann

发明人： Karl Weidner ,  Johann Ramchen ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： H01L33/60 ,  H01L23/055 ,  H01L24/18 ,  H01L24/24 ,  H01L24/82 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/24 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244

摘要： An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier.

摘要翻译： 光电子部件包括具有第一连接区域和第二连接区域的载体，具有基底表面和与基底表面相对的辐射出射表面的辐射发射半导体芯片，其中半导体芯片由载体上的基底表面布置 ，具有布置在所述载体上的下壳体部分和所述半导体芯片的相邻侧面的壳体，以及布置在所述下壳体部分上并形成为由所述半导体芯片发射的辐射的反射器的上壳体部分，以及电连接层 其从半导体芯片的辐射出射表面经由下壳体部分和上壳体部分之间的界面的一部分穿过下壳体部分到达载体上的第一连接区域。

公开(公告)号：US08546826B2

公开(公告)日：2013-10-01

申请号：US12529137

申请日：2008-02-29

申请人： Jan Marfeld ,  Walter Wegleiter ,  Moritz Engl

发明人： Jan Marfeld ,  Walter Wegleiter ,  Moritz Engl

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L24/24 ,  H01L24/82 ,  H01L33/44 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/00014

摘要： A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.

摘要翻译： 发光模块包括支撑元件，安装在用于产生电磁辐射的支撑元件上的多个光电子半导体元件，以及金属连接层，通过该金属连接层向光电半导体元件提供工作电压。 绝缘层布置在支撑元件和金属连接层之间的光电半导体部件的区域中。 金属连接层形成光电子半导体部件的光阴，使得电磁辐射仅沿指定方向发射。