公开(公告)号：US20110147926A1

公开(公告)日：2011-06-23

申请号：US13038843

申请日：2011-03-02

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/485

CPC分类号： H05K1/185 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/187 ,  H05K3/205 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a first semiconductor die or component having a plurality of bumps, and a plurality of first and second contact pads. In one embodiment, the first and second contact pads include wettable contact pads. The bumps are mounted directly to a first surface of the first contact pads to align the first semiconductor die or component. An encapsulant is deposited over the first semiconductor die or component. An interconnect structure is formed over the encapsulant and is connected to a second surface of the first and second contact pads opposite the first surface of the first contact pads. A plurality of vias is formed through the encapsulant and extends to a first surface of the second contact pads. A conductive material is deposited in the vias to form a plurality of conductive vias that are aligned by the second contact pads to reduce interconnect pitch.

摘要翻译： 半导体器件包括具有多个凸块的第一半导体管芯或部件，以及多个第一和第二接触焊盘。 在一个实施例中，第一和第二接触垫包括可湿性接触垫。 凸块直接安装在第一接触焊盘的第一表面上，以对准第一半导体管芯或部件。 密封剂沉积在第一半导体管芯或部件上。 互连结构形成在密封剂上方并连接到与第一接触焊盘的第一表面相对的第一和第二接触焊盘的第二表面。 通过密封剂形成多个通孔并且延伸到第二接触焊盘的第一表面。 导电材料沉积在通孔中以形成多个导电通孔，其通过第二接触焊盘对准以减少互连间距。

公开(公告)号：US20100258937A1

公开(公告)日：2010-10-14

申请号：US12822080

申请日：2010-06-23

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/488 ,  H01L23/31

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/82039 ,  H01L2224/83132 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

摘要翻译： 半导体器件具有形成在半导体晶片的有源表面上的保护层。 具有预先施加的保护层的半导体管芯从半导体晶片移动并安装在载体上。 载体上的半导体管芯和接触焊盘被封装。 载体被移除。 在预先施加的保护层和接触垫上形成第一绝缘层。 在第一绝缘层和预先施加的保护层中形成通孔以暴露半导体管芯上的互连部位。 在第一绝缘层上形成互连结构，与半导体管芯和接触焊盘上的互连部位电接触。 互连结构具有形成在第一绝缘层上的再分布层，形成在再分配层上的第二绝缘层和形成在与再分布层电接触的第二电介质上的凸块下金属化层。

公开(公告)号：US08846454B2

公开(公告)日：2014-09-30

申请号：US13555531

申请日：2012-07-23

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/44 ,  H01L21/48 ,  H05K1/18 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/683 ,  H01L21/56 ,  H01L25/16 ,  H01L25/10 ,  H01L23/50 ,  H05K3/46

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/82039 ,  H01L2224/83132 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

摘要翻译： 半导体器件具有形成在半导体晶片的有源表面上的保护层。 具有预先施加的保护层的半导体管芯从半导体晶片移动并安装在载体上。 载体上的半导体管芯和接触焊盘被封装。 载体被移除。 在预先施加的保护层和接触垫上形成第一绝缘层。 在第一绝缘层和预先施加的保护层中形成通孔以暴露半导体管芯上的互连部位。 在第一绝缘层上形成互连结构，与半导体管芯和接触焊盘上的互连部位电接触。 互连结构具有形成在第一绝缘层上的再分布层，形成在再分配层上的第二绝缘层和形成在与再分布层电接触的第二电介质上的凸块下金属化层。

公开(公告)号：US20120223426A9

公开(公告)日：2012-09-06

申请号：US13248312

申请日：2011-09-29

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L23/562 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar.

公开(公告)号：US20120217634A9

公开(公告)日：2012-08-30

申请号：US13038843

申请日：2011-03-02

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/485

CPC分类号： H05K1/185 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/187 ,  H05K3/205 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a first semiconductor die or component having a plurality of bumps, and a plurality of first and second contact pads. In one embodiment, the first and second contact pads include wettable contact pads. The bumps are mounted directly to a first surface of the first contact pads to align the first semiconductor die or component. An encapsulant is deposited over the first semiconductor die or component. An interconnect structure is formed over the encapsulant and is connected to a second surface of the first and second contact pads opposite the first surface of the first contact pads. A plurality of vias is formed through the encapsulant and extends to a first surface of the second contact pads. A conductive material is deposited in the vias to form a plurality of conductive vias that are aligned by the second contact pads to reduce interconnect pitch.

摘要翻译： 半导体器件包括具有多个凸块的第一半导体管芯或部件，以及多个第一和第二接触焊盘。 在一个实施例中，第一和第二接触垫包括可湿性接触垫。 凸块直接安装在第一接触焊盘的第一表面上，以对准第一半导体管芯或部件。 密封剂沉积在第一半导体管芯或部件上。 互连结构形成在密封剂上方并连接到与第一接触焊盘的第一表面相对的第一和第二接触焊盘的第二表面。 通过密封剂形成多个通孔并延伸到第二接触焊盘的第一表面。 导电材料沉积在通孔中以形成多个导电通孔，其通过第二接触焊盘对准以减少互连间距。

公开(公告)号：US20120001325A1

公开(公告)日：2012-01-05

申请号：US13231789

申请日：2011-09-13

申请人： Yaojian Lin ,  Il Kwon Shim ,  Seng Guan Chow

发明人： Yaojian Lin ,  Il Kwon Shim ,  Seng Guan Chow

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed over the silicon layer. A semiconductor die is also mounted to the temporary substrate. The stress relief buffer can be thinner than the semiconductor die. An encapsulant is deposited between the semiconductor die and stress relief buffer. The temporary substrate is removed. An interconnect structure is formed over the semiconductor die, encapsulant, and stress relief buffer. The interconnect structure is electrically connected to the semiconductor die. A stiffener layer can be formed over the stress relief buffer and encapsulant. A circuit layer containing active devices, passive devices, conductive layers, and dielectric layers can be formed within the stress relief buffer.

摘要翻译： 半导体器件具有在指定用于凸块形成的位置中安装到临时衬底的应力释放缓冲器。 应力消除缓冲器可以是多层复合材料，例如第一顺应层，在第一柔性层上形成的硅层，以及形成在硅层上的第二柔性层。 半导体管芯也安装在临时衬底上。 应力消除缓冲器可以比半导体管芯更薄。 密封剂沉积在半导体管芯和应力释放缓冲器之间。 移除临时衬底。 在半导体管芯，密封剂和应力释放缓冲器上形成互连结构。 互连结构电连接到半导体管芯。 可以在应力消除缓冲器和密封剂上形成加强层。 可以在应力消除缓冲器内形成包含有源器件，无源器件，导电层和电介质层的电路层。

公开(公告)号：US20100052135A1

公开(公告)日：2010-03-04

申请号：US12615428

申请日：2009-11-10

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L25/065 ,  H01L21/60

CPC分类号： H05K1/185 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/187 ,  H05K3/205 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a photoresist layer over a metal carrier. A plurality of openings is formed in the photoresist layer extending to the metal carrier. A conductive material is selectively plated in the openings of the photoresist layer using the metal carrier as an electroplating current path to form wettable contact pads. A semiconductor die has bumps formed on its surface. The bumps are directly mounted to the wettable contact pads to align the die with respect to the wettable contact pads. An encapsulant is deposited over the die. The metal carrier is removed. An interconnect structure is formed over the encapsulant and electrically connected to the wettable contact pads. A plurality of conductive vias is formed through the encapsulant and extends to the contact pads. The conductive vias are aligned by the wettable contact pads with respect to the die to reduce interconnect pitch.

摘要翻译： 通过在金属载体上形成光致抗蚀剂层制成半导体器件。 在延伸到金属载体的光致抗蚀剂层中形成多个开口。 使用金属载体作为电镀电流路径，将导电材料选择性地电镀在光致抗蚀剂层的开口中，以形成可湿性接触焊盘。 半导体管芯在其表面上形成凸点。 凸块直接安装到可湿性接触垫上，以相对于可湿性接触垫对准模具。 密封剂沉积在模具上。 去除金属载体。 互连结构形成在密封剂上并电连接到可湿性接触垫上。 通过密封剂形成多个导电通孔并延伸到接触垫。 导电通孔相对于管芯可湿接触焊盘对齐，以减少互连间距。

公开(公告)号：US20090152715A1

公开(公告)日：2009-06-18

申请号：US11957101

申请日：2007-12-14

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/488 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/82039 ,  H01L2224/83132 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device is made by first forming a protective layer over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

摘要翻译： 半导体器件通过首先在半导体晶片的有效表面上形成保护层来制造。 具有预先施加的保护层的半导体管芯从半导体晶片移动并安装在载体上。 载体上的半导体管芯和接触焊盘被封装。 载体被移除。 在预先施加的保护层和接触垫上形成第一绝缘层。 在第一绝缘层和预先施加的保护层中形成通孔以暴露半导体管芯上的互连部位。 在第一绝缘层上形成互连结构，与半导体管芯和接触焊盘上的互连部位电接触。 互连结构具有形成在第一绝缘层上的再分布层，形成在再分配层上的第二绝缘层和形成在与再分布层电接触的第二电介质上的凸块下金属化层。

公开(公告)号：US09252066B2

公开(公告)日：2016-02-02

申请号：US13207633

申请日：2011-08-11

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L23/538 ,  H01L23/00 ,  H01L25/10 ,  H01L25/16 ,  H05K1/18 ,  H05K3/46

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/82039 ,  H01L2224/83132 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

摘要翻译： 半导体器件具有形成在半导体晶片的有源表面上的保护层。 具有预先施加的保护层的半导体管芯从半导体晶片移动并安装在载体上。 载体上的半导体管芯和接触焊盘被封装。 载体被移除。 在预先施加的保护层和接触垫上形成第一绝缘层。 在第一绝缘层和预先施加的保护层中形成通孔以暴露半导体管芯上的互连部位。 在第一绝缘层上形成互连结构，与半导体管芯和接触焊盘上的互连部位电接触。 互连结构具有形成在第一绝缘层上的再分布层，形成在再分配层上的第二绝缘层和形成在与再分布层电接触的第二电介质上的凸块下金属化层。

公开(公告)号：US09006888B2

公开(公告)日：2015-04-14

申请号：US13248312

申请日：2011-09-29

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

IPC分类号： H01L23/498 ,  H01L23/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/10 ,  H01L23/66

CPC分类号： H01L23/562 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar.

摘要翻译： 通过在牺牲载体上形成第一导电层来制造半导体器件。 在第一导电层上形成导电柱。 半导体管芯的有源表面安装在载体上。 密封剂沉积在半导体管芯上方并围绕导电柱。 去除载体和粘合剂层。 在半导体管芯的有源表面和密封剂的第一表面上形成应力消除绝缘层。 应力消除绝缘层在半导体管芯上方具有第一厚度，并且第二厚度小于密封剂上的第一厚度。 在应力释放绝缘层上形成第一互连结构。 在与第一互连结构相对的密封剂的第二表面上形成第二互连结构。 第一和第二互连结构通过导电柱电连接。