公开(公告)号：US20020121504A1

公开(公告)日：2002-09-05

申请号：US10083382

申请日：2002-02-27

Inventor： Yoshihisa Miura ,  Yuichi Aki

IPC: B23K015/06

CPC classification number: H01J37/3174 ,  B23K15/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/301 ,  H01J2237/162 ,  H01J2237/166

Abstract: In a partial vacuum type electron beam irradiation system having a construction such that a static pressure floating pad is connected to a vacuum chamber incorporating an electron beam column, and an electron beam passes through an electron beam passage of the static pressure floating pad to impinge on a body to be irradiated in the condition where the static pressure floating pad is contactlessly attracted to the body to be irradiated, a vacuum seal valve for opening and closing the electron beam passage is provided in the inside of the static pressure floating pad, and when the static pressure floating pad is separated away from the body to be irradiated, the vacuum seal valve is actuated to close the electron beam passage, whereby the atmospheric air is prevented from flowing into the vacuum chamber

Abstract translation: 在具有这样的结构的部分真空型电子束照射系统中，静压浮动焊盘连接到包含电子束柱的真空室，并且电子束通过静压浮垫的电子束通道以撞击 在静压浮动垫无接触地吸引到被照射体的状态下照射的物体，在静压浮动垫的内部设置用于打开和关闭电子束通道的真空密封阀，并且当 将静压浮垫与被照射体分开，致动真空密封阀来闭合电子束通路，防止大气流入真空室

公开(公告)号：US06300630B1

公开(公告)日：2001-10-09

申请号：US09458583

申请日：1999-12-09

Applicant: Lee H. Veneklasen

Inventor： Lee H. Veneklasen

IPC: H01J3709

CPC classification number: H01J37/18 ,  H01J2237/166 ,  H01J2237/2006

Abstract: A vacuum seal facilitates the production of a vacuum with a localized region on the surface of a substrate, such as a semiconductor wafer or reticle, which is subject to electron beam lithography. The vacuum seal permits vacuum processing in a localized region while allowing the remainder of the substrate and its supporting stage to be outside the vacuum. In addition to conventional concentric differential pumping of vacuum zones to provide adequate vacuum, additional differential pumping is provided in the vertical direction where a lower vacuum level is maintained immediately above the substrate. Also, an isolation valve is provided between the high vacuum of the electron beam column and the lesser vacuum immediately above substrate. This valve allows isolation of the high vacuum surrounding the beam during times when the gap between an edge of the substrate and its coplanar carrier surface are directly under the vacuum seal. This protects the high vacuum during substrate loading and unloading.

Abstract translation: 真空密封件有利于在受电子束光刻的基板（例如半导体晶片或掩模版）的表面上的局部区域产生真空。 真空密封件允许在局部区域中进行真空处理，同时允许衬底的其余部分和其支撑台在真空之外。 除了真空区域的常规同心差动泵送以提供足够的真空之外，在垂直方向上提供额外的差动泵送，其中在真空上方保持较低的真空度。 此外，在电子束柱的高真空和紧挨基板上方的较小的真空之间设置隔离阀。 在该基板的边缘与其共面载体表面之间的间隙直接位于真空密封件下面的时间内，该阀允许围绕梁的高真空的隔离。 这可以保护基板装载和卸载期间的高真空。

公开(公告)号：US6165313A

公开(公告)日：2000-12-26

申请号：US291707

申请日：1999-04-14

Applicant: Toby J. Winters ,  Moutasim O. Khogly ,  Terrance P. Melvin

Inventor： Toby J. Winters ,  Moutasim O. Khogly ,  Terrance P. Melvin

IPC: C23C16/44 ,  C23C16/452 ,  H01J37/32 ,  H05H1/24 ,  H05H1/00 ,  C23C16/00

CPC classification number: C23C16/4409 ,  C23C16/452 ,  H01J37/32431 ,  H01J2237/166

Abstract: A downstream plasma reactor system is presented. The reactor system includes a reaction chamber. An inlet conduit is connected to the reaction chamber. A plasma tube is coupled to the inlet conduit. A sealing member is interposed between the plasma tube and the inlet conduit. A blocking member, preferably containing a fluorocarbon polymer, is also interposed between the plasma tube and the inlet conduit. The blocking member is positioned closer to the discharge opening of the plasma tube than the sealing member and is preferably capable of preventing a substantial quantity of plasma-generated reactive species from reaching the sealing member during operation of the reactor system.

Abstract translation: 提出了一种下游等离子体反应器系统。 反应器系统包括反应室。 入口导管连接到反应室。 等离子体管耦合到入口导管。 密封构件介于等离子体管和入口导管之间。 优选地含有氟碳聚合物的阻挡构件也插入在等离子体管和入口导管之间。 阻挡构件位于比密封构件更靠近等离子体管的排出开口处，并且优选地能够在反应器系统的操作期间防止大量的等离子体产生的反应物质到达密封构件。

公开(公告)号：US6163007A

公开(公告)日：2000-12-19

申请号：US272898

申请日：1999-03-19

Applicant: Tsutomu Tanaka ,  Thomas Nowak ,  Chau Nguyen ,  Hari Ponnekanti ,  Kevin Fairbairn

Inventor： Tsutomu Tanaka ,  Thomas Nowak ,  Chau Nguyen ,  Hari Ponnekanti ,  Kevin Fairbairn

IPC: H05H1/46 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC classification number: H01J37/32458 ,  H01J37/32192 ,  H01J2237/166

Abstract: Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.

Abstract translation: 用于解离诸如NF3的清洁气体用于半导体制造的装置包括：包围微波谐振器的壳体，微波能量被施加到微波谐振器，壳体内的等离子体管，其中清洁气体流动并由微波能量解离。 等离子体管具有两个进入和离开清洁气体的端部。 第一和第二结构组件热保护和密封等离子体管的每一端以抵抗大气泄漏。 每个结构组件具有金属环和密封O形圈，紧密地围绕等离子体管的相应末端。 每个金属套环包括具有高导热性的薄层弹性体材料，用于通过套环远离等离子体管的端部传导热量，从而保护O形环免受热损伤。 这使得设备更有效地操作。 风扇迫使环境空气流过设备。

公开(公告)号：US12027346B2

公开(公告)日：2024-07-02

申请号：US17386464

申请日：2021-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobutaka Sasaki ,  Shin Matsuura

IPC: H01J37/32 ,  H01J41/02 ,  H01L21/67

CPC classification number: H01J37/32477 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32816 ,  H01J37/32834 ,  H01J41/02 ,  H01L21/67253 ,  H01J2237/166 ,  H01J2237/334

Abstract: A substrate processing apparatus includes a chamber including a processing room for processing of a substrate using an introduced gas and an exhaust room for exhausting the gas in the processing room, a shield member provided near a side wall of the chamber to separate the processing room and the exhaust room and including a hole allowing the processing room and the exhaust room to communicate with each other, the shield member being driven in a vertical direction, and a hollow relay member connected to a pipe connected to an instrument outside the chamber and configured to be driven in a horizontal direction. When the shield member reaches an upper position, the relay member is driven inwardly of the chamber to be connected to the shield member at its inward end to allow the processing room and the pipe to communicate with each other through the hole.

公开(公告)号：US20230317480A1

公开(公告)日：2023-10-05

申请号：US18129473

申请日：2023-03-31

Applicant: Tokyo Electron Limited

Inventor： Masahiro DOGOME

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/67196 ,  H01L21/67739 ,  H01L21/68792 ,  H01J37/32513 ,  H01J37/32899 ,  H01J2237/166 ,  H01J2237/186

Abstract: A gate valve apparatus and a semiconductor manufacturing apparatus, in which a volume of a drive portion for driving a valve body is reduced, are provided. The gate valve apparatus includes a housing having an opening, a valve body configured to open and close the opening, and a drive portion configured to drive the valve body, in which the drive portion includes a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body, a second crankshaft including a second input shaft rotatably supported by the side wall of the housing and a second output shaft rotatably supported by the valve body, a rotation transmission portion configured to transmit rotation of the first input shaft to the second input shaft, and an actuator configured to rotate the first input shaft.

公开(公告)号：US20230282442A1

公开(公告)日：2023-09-07

申请号：US18079074

申请日：2022-12-12

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Andreas Schmaunz ,  Gero Walter ,  Bernd Stenke ,  Gerald Schmid

IPC: H01J37/16 ,  H01J37/10

CPC classification number: H01J37/16 ,  H01J37/10 ,  H01J2237/006 ,  H01J2237/0492 ,  H01J2237/166

Abstract: The invention relates to a gas reservoir (3000) for receiving a precursor (3035). The gas reservoir (3000) has a gas-receiving unit (3004) which is arranged in a first receiving unit (3002) of a basic body (3001), and a sliding unit (3007) which is arranged movably in a second receiving unit (3003) of the basic body (3001). The gas-receiving unit (3004) has a movable closure unit (3006) for opening or closing a gas outlet opening (3005) of the gas-receiving unit (3004). In a first position of the sliding unit (3007), both a first opening (3009) of a sliding-unit line device (3008) is fluidically connected to a first basic body opening (3011) and a second opening (3010) of the sliding-unit line device (3008) is fluidically connected to a second basic body opening (3012). In the second position of the sliding unit (3007), both the first opening (3009) is arranged at an inner wall (3015) of the second receiving unit (3003) and the second opening (3010) is arranged at the movable closure unit (3006).

公开(公告)号：US20180019104A1

公开(公告)日：2018-01-18

申请号：US15244718

申请日：2016-08-23

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  Anthony O'MALLEY

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32513 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/166 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

公开(公告)号：US20170263414A1

公开(公告)日：2017-09-14

申请号：US15174323

申请日：2016-06-06

Applicant: Taiwan Electron Microscope Instrument Corporation

Inventor： FU-RONG CHEN ,  Tsu-Wei HUANG ,  Shih-Yi LIU ,  I-Jiun CHEN ,  CHIH WEI CHEN ,  Ying-Shuo TSENG ,  Yu-Shan HUANG ,  Hsin-Yu LIN ,  Jian-Min FANG ,  Chin-Liang HSU ,  LI-CHIAO YANG

IPC: H01J37/26 ,  H01J37/16 ,  H01J37/20

CPC classification number: H01J37/26 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J2237/162 ,  H01J2237/166 ,  H01J2237/188 ,  H01J2237/2001 ,  H01J2237/2003 ,  H01J2237/2004 ,  H01J2237/202

Abstract: An electron microscope includes a charged particle beam generator, a detector, a film and a bearing unit. The charged particle beam generator generates a first charged particle beam to bomb an object. The detector detects a second charged particle from the object to form an image. The film disposes on downstream of charged particle beam generator and has a first surface and a second surface. A space between charged particle beam generator and the first surface of film is a vacuum environment. The bearing unit disposes at a side of second surface of film and has a bearing surface and a back surface. The object disposes on the bearing surface of the bearing unit and a distance between an analyzed surface of the object and the film is less than a predetermined spacing. A liquid space exists between the analyzed surface and the film to be filled a liquid.

公开(公告)号：US20150287616A1

公开(公告)日：2015-10-08

申请号：US14725192

申请日：2015-05-29

Applicant: Intermolecular, Inc.

Inventor： Thomas R. Boussie ,  Tony P. Chiang ,  Alexander Gorer ,  David E. Lazovsky

IPC: H01L21/67 ,  C23C16/455 ,  H01J37/32 ,  C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458

CPC classification number: H01L21/67011 ,  C23C14/54 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32724 ,  H01J2237/166 ,  H01J2237/20228 ,  H01J2237/20235 ,  H01L21/6715 ,  H01L21/76849 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S438/907 ,  Y10S438/913 ,  Y10T137/8593 ,  H01L2924/00

Abstract: The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.

Abstract translation: 本发明提供了用于基板区域的离散化，组合处理的方法和系统，例如用于集成电路制造中使用的新材料，工艺和工艺顺序集成方案的发现，实现，优化和鉴定。 通过将材料输送到衬底或修改衬底的区域来处理其上具有差分处理区域阵列的衬底。