公开(公告)号：US20240055241A1

公开(公告)日：2024-02-15

申请号：US18206089

申请日：2023-06-06

Applicant: SEMES CO., LTD.

Inventor： Byeong Hyeon KONG

IPC: H01J37/32 ,  G05D23/19

CPC classification number: H01J37/32724 ,  G05D23/1917 ,  H01J2237/2007 ,  H01J2237/24585 ,  H01J2237/2001 ,  H01J2237/334

Abstract: There are provided an electrostatic chuck (ESC) temperature control unit capable of independently controlling multi-zones of an electrostatic chuck using an alternating current (AC) heater and a direct current (DC) heater, and a substrate treating apparatus including the same. The substrate treating apparatus includes: a housing; a substrate support unit; a shower head unit; a plasma generating unit; and an ESC temperature control unit, wherein the ESC temperature control unit which controls a temperature of the electrostatic chuck includes: a plurality of first heaters; a plurality of second heaters providing power different from that of the first heaters; and a control module controlling the first heaters and the second heaters, and the control module independently controls the first heaters and the second heaters.

公开(公告)号：US20240047259A1

公开(公告)日：2024-02-08

申请号：US18362367

申请日：2023-07-31

Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.

Inventor： Michio Horiuchi ,  Ryosuke Hori

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32715 ,  H01J2237/2007

Abstract: An electrostatic chuck includes a base body, and an electrostatic electrode embedded in the base body. The base body is a ceramic. The electrostatic electrode has TixOy, which is an oxide of titanium, as a main component, and an atomic ratio y/x is less than 1.7.

公开(公告)号：US11894254B2

公开(公告)日：2024-02-06

申请号：US16567865

申请日：2019-09-11

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Nicolas Launay

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.

公开(公告)号：US11887811B2

公开(公告)日：2024-01-30

申请号：US17014177

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Ravikumar Patil

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/458 ,  C23C16/509 ,  H01L21/687

CPC classification number: H01J37/32091 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  H01J2237/2007 ,  H01J2237/20235

Abstract: Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.

公开(公告)号：US20240030002A1

公开(公告)日：2024-01-25

申请号：US18375886

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/31116 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/2007

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US11862439B2

公开(公告)日：2024-01-02

申请号：US16821708

申请日：2020-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Kawawa ,  Hideomi Hosaka ,  Kouichi Nakajima ,  Masamichi Hara

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/458 ,  G01R29/24

CPC classification number: H01J37/32697 ,  C23C16/4583 ,  G01R29/24 ,  H01J37/32715 ,  H01L21/6831 ,  H01J2237/0206 ,  H01J2237/2007 ,  H01J2237/20214

Abstract: In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.

公开(公告)号：US20230420282A1

公开(公告)日：2023-12-28

申请号：US18345094

申请日：2023-06-30

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Masaki ISHIKAWA

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J37/32724

Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface on an upper surface, a first cooling substrate formed of a composite material of metal and ceramic or a low thermal expansion metal material, a metal joining layer that joins ceramic substrate and the first cooling substrate to each other, a second cooling substrate in which a refrigerant flow path is formed, a heat dissipation sheet disposed between the first cooling substrate and the second cooling substrate, a screw hole that opens in the lower surface of the first cooling substrate, a through hole that is provided at a position facing the screw hole and that extends through the second cooling substrate in an up-down direction, and a screw member that is inserted into the through hole from a lower surface of the second cooling substrate and that is screwed into the screw hole.

公开(公告)号：US11848223B2

公开(公告)日：2023-12-19

申请号：US16970615

申请日：2019-02-19

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Hironori Kugimoto ,  Masaki Ozaki ,  Takeshi Watanabe ,  Kentaro Takahashi

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck device includes: a mounting table provided with amounting surface on which a plate-shaped sample is mounted; an annular focus ring; and a cooling element for cooling the focus ring, in which the mounting table has a holding portion provided to surround the mounting surface, and the holding portion includes an annular groove surrounding the mounting surface, and a through-hole that is open on a bottom surface of the groove, wherein a tubular insulator has been inserted into the through-hole, the holding portion has upper surfaces, which are located on both sides of the groove in a width direction, as holding surfaces that are in contact with the focus ring and hold the focus ring, wherein the holding surface satisfies the following conditions (i) to (iii); (i) surface roughness is 0.05 μm or less, (ii) a flatness is 20 μm or less, and (iii) the holding surface does not have a recess having a depth of 1.0 μm or more and extending in a direction intersecting the holding surface.

公开(公告)号：US20230402265A1

公开(公告)日：2023-12-14

申请号：US18253423

申请日：2021-11-17

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yancheng LU ,  Gang WEI ,  Xingfei MAO

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20207 ,  H01J2237/2005

Abstract: The present disclosure provides a process chamber and a semiconductor process apparatus. The process chamber is applied in the semiconductor process apparatus and includes a chamber body, a base, and a chuck assembly. The reaction chamber is formed in the chamber body. The base is located in the reaction chamber. The chuck assembly is connected to the base and configured to carry a wafer. The base includes a base body and a plurality of cantilevers. The plurality of cantilevers are arranged evenly along the circumference of the base body. Each cantilever is connected to the inner wall of the chamber body and the outer wall of the base body. The chamber body, the base body, and the cantilever have an integral structure and are made of a material having the electrical conductivity and the thermal conductivity.

公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC: H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC classification number: H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.