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110 条记录 (耗时 0.02 秒)

    Self-cleaning radio frequency plasma source
    24.
    发明授权
    Self-cleaning radio frequency plasma source 有权
    自清洗射频等离子体源

    公开(公告)号：US09142392B2

    公开(公告)日：2015-09-22

    申请号：US13958809

    申请日：2013-08-05

    申请人： Varian Semiconductor Equipment Associates, Inc.

    发明人： Neil J. Bassom

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32853 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32862 ,  H01J37/32899 ,  H01J37/32981

    摘要： A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed.

    摘要翻译： 描述了用于半导体制造工艺的自清洁射频（RF）等离子体源。 各种示例提供了RF等离子体源，其包括设置在RF天线周围的RF天线和可旋转介质套筒。 电介质位于处理室和清洁室之间，使得电介质的表面的一部分可以暴露于处理室或清洁室中。 当材料沉积在处理室中的电介质的外表面上时，电介质套筒被旋转，使得包含积聚物的部分暴露于清洁室。 在清洁室中的溅射工艺从套筒的表面去除积聚。 然后使电介质套筒旋转，使其暴露于处理室。 公开和要求保护其他实施例。

    System and method of monitoring and controlling atomic layer deposition of tungsten
    25.
    发明授权
    System and method of monitoring and controlling atomic layer deposition of tungsten 有权
    监测和控制钨原子层沉积的系统和方法

    公开(公告)号：US08900886B2

    公开(公告)日：2014-12-02

    申请号：US13486270

    申请日：2012-06-01

    申请人： Kun-Ei Chen ,  Jen-Yi Chen ,  Yi-Chung Lin ,  Chen-Chieh Chiang ,  Ling-Sung Wang

    发明人： Kun-Ei Chen ,  Jen-Yi Chen ,  Yi-Chung Lin ,  Chen-Chieh Chiang ,  Ling-Sung Wang

    IPC分类号： H01L21/66

    CPC分类号： C23C16/52 ,  C23C16/14 ,  C23C16/45527 ,  H01J37/32981

    摘要： A method of semiconductor processing comprises providing a semiconductor wafer in a processing chamber; feeding at least one tungsten-containing precursor in a gas state into the processing chamber for atomic layer deposition (ALD) of tungsten; feeding at least one reducing chemical in a gas state into the processing chamber; and monitoring a concentration of at least one gaseous byproduct in the chamber; and providing a signal indicating concentration of the at least one gaseous byproduct in the chamber. The byproduct is produced by a reaction between the at least one tungsten-containing precursor and the at least one reducing chemical during the ALD.

    摘要翻译： 一种半导体处理方法包括在处理室中设置半导体晶片; 将至少一种以气体状态的含钨前体进料到用于钨的原子层沉积（ALD）的处理室中; 将至少一种气体状态的还原化学品进料到所述处理室中; 以及监测所述室中的至少一种气态副产物的浓度; 以及提供指示所述室中所述至少一种气态副产物的浓度的信号。 在ALD期间，副产物通过至少一种含钨前体与至少一种还原化学物质之间的反应产生。

    Method for controlling cyclic plasma-assisted process
    26.
    发明授权
    Method for controlling cyclic plasma-assisted process 有权
    控制循环等离子体辅助过程的方法

    公开(公告)号：US08790743B1

    公开(公告)日：2014-07-29

    申请号：US13784388

    申请日：2013-03-04

    申请人： ASM IP Holding B.V.

    发明人： Taku Omori ,  Naoki Inoue ,  Wataru Adachi

    IPC分类号： C23C16/52

    CPC分类号： C23C16/52 ,  C23C16/45536 ,  H01J37/32146 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

    摘要： A method for processing a substrate in a reactor by pulsing RF power, includes: applying RF power in pulses in the reactor to process the substrate; monitoring data from the reactor indicative of anomalous pulses of RF power, including data from a photo sensor equipped in the reactor; counting the number of anomalous pulses of RF power in the monitored data; determining whether or not the number of anomalous pulses of RF power is acceptable; and initiating a pre-designated sequence if the number of anomalous pulses of RF power is determined to be unacceptable.

    摘要翻译： 一种用于通过脉冲RF功率来处理反应器中的衬底的方法，包括：在反应器中以脉冲施加RF功率以处理衬底; 监测来自反应堆的指示RF功率的异常脉冲的数据，包括来自安装在反应器中的光传感器的数据; 对监测数据中的RF功率的异常脉冲数进行计数; 确定RF功率的异常脉冲数是否可接受; 以及如果RF功率的异常脉冲数被确定为不可接受，则启动预定序列。

    MASS SPECTROMETRY DEVICE
    27.
    发明申请
    MASS SPECTROMETRY DEVICE 有权
    质谱仪

    公开(公告)号：US20140103207A1

    公开(公告)日：2014-04-17

    申请号：US14123310

    申请日：2012-04-09

    申请人： Makoto Sampei

    发明人： Makoto Sampei

    IPC分类号： H01J49/02

    CPC分类号： H01J49/02 ,  G01N27/624 ,  H01J37/32862 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J49/067

    摘要： When a specimen from a specimen ionizing unit is not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and be deposited as a product such as an oxide or carbide, which causes a deterioration in the performance of the mass spectrometry device. The mass spectrometry device has a specimen ionizing section for ionizing a specimen, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located downstream of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside the specimen-introduction regulating chamber and/or the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member located oppositely to each other inside the specimen-introduction regulating chamber.

    摘要翻译： 当来自试样离子化单元的试样没有充分离子化时，导致在导入部中残留在孔以外的部位，作为氧化物或碳化物等的制品析出，导致质量的性能下降 光谱仪 该质谱装置具有用于使试样离子化的试样离子化部，引入离子化试样的离子的试样导入调节室，位于试样导入调节室下游的差动抽空室，以及分析部 其中形成有用于在试样导入调节室和/或差动抽空室内产生放电的排放发生装置的差动排空室的下游侧。 放电产生装置具有在试样导入调节室内部彼此相对设置的试样导入部电极和第一孔部形成部件。

    Impedance-Based Adjustment of Power and Frequency
    28.
    发明申请
    Impedance-Based Adjustment of Power and Frequency 有权
    基于阻抗的功率和频率调整

    公开(公告)号：US20130214683A1

    公开(公告)日：2013-08-22

    申请号：US13666912

    申请日：2012-11-01

    申请人： John C. Valcore, JR. ,  Bradford J. Lyndaker

    发明人： John C. Valcore, JR. ,  Bradford J. Lyndaker

    IPC分类号： H05H1/46

    CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

    摘要： Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line.

    摘要翻译： 描述了用于功率和频率的基于阻抗的调整的系统和方法。 系统包括用于容纳等离子体的等离子体室。 等离子体室包括电极。 该系统包括耦合到等离子体室的驱动器和放大器，用于向电极提供射频（RF）信号。 驱动器和放大器经由传输线耦合到等离子体室。 该系统还包括耦合到驱动器和放大器的选择器，耦合到选择器的第一自动频率控制（AFC）和耦合到选择器的第二AFC。 选择器被配置为基于传输线上感测的电流和电压的值来选择第一AFC或第二AFC。

    PLASMA PROCESSING METHOD AND APPARATUS
    29.
    发明申请
    PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
    等离子体处理方法和装置

    公开(公告)号：US20100288195A1

    公开(公告)日：2010-11-18

    申请号：US12846403

    申请日：2010-07-29

    申请人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    发明人： Eiji IKEGAMI ,  Shoji Ikuhara ,  Takeshi Shimada ,  Kenichi Kuwabara ,  Takao Arase ,  Tsuyoshi Matsumoto

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

    摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

    摘要翻译： 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

    APPARATUS FOR CHEMICALLY ETCHING A WORKPIECE
    30.
    发明申请
    APPARATUS FOR CHEMICALLY ETCHING A WORKPIECE 有权
    化学蚀刻工具的设备

    公开(公告)号：US20100230049A1

    公开(公告)日：2010-09-16

    申请号：US12722614

    申请日：2010-03-12

    申请人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

    发明人： Oliver Ansell ,  Anthony Barrass ,  Paul Bennett ,  David Tossell

    IPC分类号： C23F1/06

    CPC分类号： H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

    摘要： Apparatus for chemically etching a workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

    摘要翻译： 用于化学蚀刻工件的设备包括用于接收处理气体并具有用于抽取废气的泵送端口的腔室和位于泵送端口上游的腔室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件的下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可通过窗口监测的光发射。