公开(公告)号：US07122825B2

公开(公告)日：2006-10-17

申请号：US11093795

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/36

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US20050179025A1

公开(公告)日：2005-08-18

申请号：US11093885

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/06 ,  H01L29/20 ,  H01L31/0304

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20050170538A1

公开(公告)日：2005-08-04

申请号：US11093807

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L21/00

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20050167675A1

公开(公告)日：2005-08-04

申请号：US11093795

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L29/15 ,  H01L31/0312

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US5976958A

公开(公告)日：1999-11-02

申请号：US965390

申请日：1997-11-06

Applicant: Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

Inventor： Rajesh D. Rajavel ,  Owen K. Wu ,  Peter D. Brewer ,  Terence J. deLyon

IPC: C30B23/02 ,  H01L21/363 ,  H01L21/20

CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02631

Abstract: A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first Group V flux is then decomposed to generate a second Group V flux, which is, in turn, provided to the lattice to p-type dope the growing film. The Group V source material may by arsenic such that the second Group V flux may predominantly include dimeric arsenic decomposed from tetrameric arsenic to improve the incorporation of arsenic into the Group VI sublattice of the lattice.

Abstract translation: 生长p型掺杂的II-VI族半导体膜的方法包括以下步骤：形成包含II族材料和VI族材料的晶格，并通过蒸发固体V族源材料产生第一V族熔剂。 然后第一组V磁通被分解以产生第二组V磁通，其又提供给p型掺杂生长膜的晶格。 V族源材料可以通过砷使得第二V族通量主要包括从四聚砷分解的二聚砷，以改善砷掺入到晶格的第VI族亚晶格中。

公开(公告)号：US5132247A

公开(公告)日：1992-07-21

申请号：US589921

申请日：1990-09-28

Applicant: Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

Inventor： Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

IPC: H01L21/208 ,  H01L21/20 ,  H01L29/06 ,  H01S5/00 ,  H01S5/34

CPC classification number: B82Y20/00 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02628 ,  H01L21/02661 ,  H01S5/341 ,  Y10S438/962

Abstract: A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

公开(公告)号：US4447470A

公开(公告)日：1984-05-08

申请号：US447082

申请日：1982-12-06

Applicant: Robert E. Kay

Inventor： Robert E. Kay

IPC: H01L21/363 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/00

CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02631 ,  H01L31/02966

Abstract: Methods for growing HgCdTe (15) upon a CdTe substrate (5) using a HgTe source (3) and close-spaced vapor phase epitaxy (CSVPE). A processing temperature T of between 520.degree. C. and 625.degree. C. is employed over a processing time t of between approximately 1/4 and 4 hours. The thickness A of the grown HgCdTe (15) is a linear function of processing time t. The mole fraction x of cadmium in the HgCdTe (15) is a linear function of temperature T and an exponential function of the mole fraction y of mercury in the source (3). The lower the relative amount of mercury in the source (3), the greater the relative amount of mercury in the end product (15), and vice versa. Any crystal plane and any axial orientation of the CdTe substrate (5) can be used without affecting the rate of growth of the HgCdTe (15), the single crystal nature of the HgCdTe (15), or the mirror-like finish of its surface. At least 90% of the transition between the CdTe substrate (5) and the grown HgCdTe layer (15) occurs within the first 20% of the HgCdTe layer (15); for distances greater than this away from the substrate (5), the HgCdTe (15) exhibits a substantially uniform x.

Abstract translation: 使用HgTe源（3）和紧密间隔的气相外延（CSVPE）在CdTe衬底（5）上生长HgCdTe（15）的方法。 在大约1/4至4小时之间的处理时间t内采用520℃至625℃之间的加工温度T. 生长的HgCdTe（15）的厚度A是处理时间t的线性函数。 HgCdTe（15）中镉的摩尔分数x是温度T的线性函数，以及源（3）中汞的摩尔分数y的指数函数。 源（3）中汞的相对量越低，最终产品（15）中汞的相对量越大，反之亦然。 可以使用CdTe基板（5）的任何晶面和任何轴向取向，而不影响HgCdTe（15）的生长速率，HgCdTe（15）的单晶性质或其表面的镜面光洁度 。 CdTe衬底（5）和生长的HgCdTe层（15）之间的至少90％的转变发生在HgCdTe层（15）的前20％内; 对于远离衬底（5）的距离，HgCdTe（15）表现出基本均匀的x。

公开(公告)号：US4435224A

公开(公告)日：1984-03-06

申请号：US234753

申请日：1981-02-17

Applicant: Alain Durand

Inventor： Alain Durand

IPC: C01B19/04 ,  C30B11/00 ,  C30B19/00 ,  C30B23/02 ,  C30B29/48 ,  H01L21/363 ,  H01L21/365 ,  H01L29/221 ,  H01L31/0296 ,  H01L31/18 ,  H01L21/205 ,  H01L21/324

CPC classification number: H01L31/1832 ,  C30B11/00 ,  C30B19/00 ,  C30B23/02 ,  C30B29/48 ,  C30B29/60 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02667 ,  H01L29/221 ,  H01L31/02966

Abstract: Process for obtaining a homogeneous layer of composition Hg.sub.1-x Cd.sub.x Te, comprising the steps of:subjecting a wafer formed by a layer of Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x.sub.o being less than the desired value x, to a melting treatment,then rapidly cooling the wafer.

Abstract translation: 用于获得组合物Hg1-xCdxTe的均匀层的方法，包括以下步骤：将由外延生长沉积的Hg1-xCdxoTe层形成的晶片在小于期望值x的CdTe衬底上经受熔融处理 ，然后快速冷却晶片。

公开(公告)号：US3261726A

公开(公告)日：1966-07-19

申请号：US14388261

申请日：1961-10-09

Applicant: MONSANTO CO

Inventor： RUEHRWEIN ROBERT A

IPC: H01L21/34 ,  H01L21/365 ,  H01L31/18

CPC classification number: H01L31/1836 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/024 ,  H01L21/02411 ,  H01L21/02551 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/66969 ,  H01L31/1828 ,  Y02E10/543 ,  Y10S148/072

公开(公告)号：US09922933B2

公开(公告)日：2018-03-20

申请号：US14837331

申请日：2015-08-27

Applicant: SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR

Inventor： Olivier Chevrier ,  Emmanuel Carrere ,  Nicolas Pere-Laperne

IPC: H01L23/544 ,  H01L21/02 ,  H01L21/08 ,  H01L21/10 ,  H01L27/146 ,  C30B9/12 ,  C30B25/18

CPC classification number: H01L23/544 ,  C30B9/12 ,  C30B25/18 ,  H01L21/02411 ,  H01L21/0243 ,  H01L21/02562 ,  H01L21/02617 ,  H01L21/08 ,  H01L21/101 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14669 ,  H01L27/14683 ,  H01L27/1469 ,  H01L27/14696 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of positioning elements or additional technological levels on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit comprising an array network of photosensitive sites for the wavelength ranges of interest, hybridized on a read circuit, said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit indexing patterns by marking of the growth substrate.