公开(公告)号：US20240006548A1

公开(公告)日：2024-01-04

申请号：US17822451

申请日：2022-08-26

申请人： Georgia Tech Research Corporation

发明人： Patrick Stephen Goley ,  John D. Cressler

IPC分类号： H01L31/107 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L31/107 ,  H01L31/1804 ,  H01L31/028

摘要： An exemplary embodiment of the present disclosure provides an avalanche photodiode (APD), comprising: a p-doped substrate; a first n-doped region; an n-doped epitaxial region; a plurality of n-doped wells; and a first p-doped region. The first n-doped region can be positioned above at least a portion of the p-doped substrate. The n-doped epitaxial region can be positioned above at least a portion of the first n-doped region. The plurality of n-doped wells can be positioned within the first n-doped epitaxial region. The first p-doped region can be positioned above the n-doped epitaxial region and the plurality of n-doped wells.

公开(公告)号：US20230402478A1

公开(公告)日：2023-12-14

申请号：US18232323

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yun-Wei CHENG ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/028

CPC分类号： H01L27/1463 ,  H01L31/02161 ,  H01L31/028

摘要： Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

公开(公告)号：US11830954B2

公开(公告)日：2023-11-28

申请号：US17974325

申请日：2022-10-26

申请人： W&WSens Devices, Inc.

发明人： Shih-Yuan Wang ,  Shih-Ping Wang

IPC分类号： H01L31/0236 ,  H01L27/144 ,  G02B1/00 ,  G02B6/42 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H04B10/25 ,  H04B10/40 ,  H04B10/69 ,  H04B10/80

CPC分类号： H01L31/02363 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

摘要： Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.

公开(公告)号：US11815422B2

公开(公告)日：2023-11-14

申请号：US17418720

申请日：2019-12-13

申请人： Nippon Telegraph and Telephone Corporation

发明人： Hiroshi Fukuda ,  Toru Miura ,  Yoshiho Maeda

IPC分类号： G01M11/00 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L33/34

CPC分类号： G01M11/33 ,  G02B6/12007 ,  H01L31/028 ,  H01L31/02327 ,  H01L33/34 ,  G02B2006/12061 ,  G02B2006/12123 ,  G02B2006/12126

摘要： An embodiment optical test circuit includes a first optical circuit and a second optical circuit formed on a substrate, an input optical waveguide optically connected to the first optical circuit and the second optical circuit, and an output optical waveguide optically connected to the first optical circuit and the second optical circuit. The optical test circuit also includes a light emitting diode optically connected to the input optical waveguide, and a photodiode optically connected to the output optical waveguide.

公开(公告)号：US20230352606A1

公开(公告)日：2023-11-02

申请号：US17921724

申请日：2021-04-27

申请人： OUSSAMA MOUTANABBIR ,  MAHMOUD ATALLA ,  SIMONE ASSALI ,  ANIS ATTIAOUI

发明人： OUSSAMA MOUTANABBIR ,  MAHMOUD ATALLA ,  SIMONE ASSALI ,  ANIS ATTIAOUI

IPC分类号： H01L31/028 ,  H01L33/34 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L31/028 ,  H01L33/34 ,  H01L33/002 ,  H01L33/0054 ,  H01L31/1812 ,  H01L31/1892 ,  H01L33/0093

摘要： There is provided an optoelectronic device having an operation range reaching and exceeding 4 μm. The optoelectronic device includes a silicon or a silicon-based substrate and a heterostructure at least partially extending over the substrate. The heterostructure includes a stack of coextending photoactive layers and each photoactive layer includes one or two group IV elements. The photoactive layers are configured for absorbing and/or emitting short-wave infrared and mid-wave infrared radiation. In some embodiments, the short-wave infrared and mid-wave infrared radiation is in a wavelength range extending from about 1 μm to about 8 μm. Methods for manufacturing such an optoelectronic device and device processing are also provided. The methods include forming a heterostructure on a substrate, releasing the heterostructure from the substrate to form a relaxed membrane and transferring the relaxed membrane on a host substrate.

公开(公告)号：US11798969B2

公开(公告)日：2023-10-24

申请号：US17841546

申请日：2022-06-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/028

CPC分类号： H01L27/1463 ,  H01L31/028 ,  H01L31/02161

摘要： Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

公开(公告)号：US11784276B2

公开(公告)日：2023-10-10

申请号：US16500350

申请日：2018-01-08

申请人： SUNPOWER CORPORATION ,  TOTAL SOLAR INTERNATIONAL

发明人： Moon Chun ,  Christoph Sachs ,  David Verstraeten

IPC分类号： H01L31/18 ,  H01L31/028 ,  B28D5/04 ,  C01B33/037

CPC分类号： H01L31/1804 ,  B28D5/042 ,  C01B33/037 ,  H01L31/028 ,  C01P2002/52 ,  C01P2004/61 ,  C01P2006/40 ,  C01P2006/80

摘要： Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

公开(公告)号：US11769849B2

公开(公告)日：2023-09-26

申请号：US17422005

申请日：2020-01-14

申请人： Nippon Telegraph and Telephone Corporation

发明人： Kotaro Takeda

IPC分类号： H01L31/105 ,  H01L31/0224 ,  H01L31/024 ,  H01L31/028

CPC分类号： H01L31/1055 ,  H01L31/024 ,  H01L31/028 ,  H01L31/022408

摘要： The present invention is to provide a GePD, the optical sensitivity of which is independent from a temperature, and to achieve a photodetector in which heat applied from heaters is constant even when a plurality of GePDs are provided and in which a temperature and sensitivity of each of the GePDs are the same. The photodetector includes germanium photoreceivers including a silicon substrate, a lower clad layer, a silicon core layer, a silicon waveguide layer, a germanium layer, an upper clad layer, and electrodes. In the photodetector, two or more germanium photoreceivers are arranged adjacent to each other on the silicon substrate, and the photodetector includes resistors embedded in the upper clad layer to cover or surround respective germanium layers of the two or more germanium photoreceivers arranged adjacent to each other, the resistors being made of a metal or a metal compound.

公开(公告)号：US20230299225A1

公开(公告)日：2023-09-21

申请号：US18155876

申请日：2023-01-18

申请人： Massachusetts Institute of Technology

发明人： Kevin Ryu ,  Joseph S. Ciampi ,  Brian F. AULL ,  Kevan Donlon ,  Renee D. Lambert

IPC分类号： H01L31/18 ,  H01L31/107 ,  H01L31/028 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02

CPC分类号： H01L31/1876 ,  H01L31/1075 ,  H01L31/028 ,  H01L27/1446 ,  H01L27/1443 ,  H01L27/14634 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/1469 ,  H01L27/14692 ,  H01L27/14698 ,  H01L31/02027 ,  H01L31/02005 ,  H01L31/1864 ,  H01L31/1868

摘要： Fabrication of avalanche photodiodes on a first wafer for operation in Geiger mode and integration with read-out integrated circuits (ROICs), fabricated on a second wafer, are described. Photodiode arrays are fabricated using a thin epitaxial layer grown on a semiconductor-on-insulator wafer. Chips are diced from the first wafer and bump bonded to chips diced from the second wafer.

公开(公告)号：US11749773B2

公开(公告)日：2023-09-05

申请号：US17414452

申请日：2019-12-04

申请人： Nippon Telegraph and Telephone Corporation

发明人： Yuki Yamada ,  Fumito Nakajima

IPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0304

CPC分类号： H01L31/107 ,  H01L31/0336 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0304

摘要： An embodiment avalanche photodiode includes a substrate, an n-type contact layer, a buffer layer, a multiplication layer, a field-control layer, an absorption layer, and a p-type contact layer. A conductive layer is formed in a central part of the buffer layer. The substrate is constituted of a semiconductor with a higher thermal conductivity than InP such as SiC, and the n-type contact layer is constituted of a same semiconductor as the substrate and is made n-type.