公开(公告)号：US07597531B2

公开(公告)日：2009-10-06

申请号：US11044632

申请日：2005-01-28

申请人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

发明人： Keiji Okada ,  Michiro Sugitani ,  Yoshitomo Hidaka ,  Junichi Murakami ,  Fumiaki Sato ,  Mitsukuni Tsukihara ,  Suguru Hirokawa ,  Masamitsu Shinozuka

IPC分类号： B65H1/00 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H02K41/00

CPC分类号： H01L21/67706 ,  H01L21/67709 ,  Y10S414/135

摘要： Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

摘要翻译： 本发明的实施例涉及一种控制移动器装置的方法。该方法包括从移动力产生单元产生移动力以相对于可移动基座移动处理基座，从而相对于固定基座移动处理基座 作为处理基座相对于可移动基座移动的结果; 通过由从移动力产生单元产生的移动力产生的反作用力使处于移动方向的方向与处理基座的移动方向相反的方向移动到固定基座上，以移动处理基座，使得可移动基座移动 在与固定基座上的处理基座的移动方向相反的方向上。 该方法还包括控制处理基座相对于固定基座的移动速度。

公开(公告)号：US07351987B2

公开(公告)日：2008-04-01

申请号：US11202100

申请日：2005-08-12

申请人： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

发明人： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

IPC分类号： G21K5/10

CPC分类号： H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

摘要： An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

摘要翻译： 照射系统包括光束产生源，质量分析装置，光束变换器，用于使光束往复摆动的扫描偏转器，光束并行化装置，加速/减速装置以及能量过滤装置。 根据本发明，提供了产生电场和磁场以弯曲轨迹的混合角能量滤波器作为能量过滤装置。 在混合角能量滤波器的下游侧还设置有一对多表面能量狭缝单元，其具有可根据用于照射的离子种类在其间切换的多个能量狭缝。 在诸如中性粒子，不同种类的掺杂剂，具有不同能量的离子，金属和灰尘颗粒的污染物的量非常小的条件下，可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

公开(公告)号：US20080067404A1

公开(公告)日：2008-03-20

申请号：US11806127

申请日：2007-05-30

申请人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Hiroshi Matsushita

发明人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Yoshitaka Amano ,  Hiroshi Matsushita

IPC分类号： H01J3/14

CPC分类号： H01J37/153 ,  H01J37/1477 ,  H01J37/3171 ,  H01J2237/30477

摘要： A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.

摘要翻译： 光束偏转扫描器用离子束或带电粒子束进行往复偏转扫描，从而周期性地改变光束轨迹，并且包括一对扫描电极，其被安装成彼此相对，并且光束轨迹插入其间， 校正电极，其安装在垂直于该对扫描电极的相反方向的方向上，其中光束轨迹插入其间，并且沿着光束移动轴线延伸。 正电位和负电位交替施加到该对扫描电极，同时校正电压不断地施加到该对校正电极。 在正电位和负电位之间切换时，由一对校正电极产生的校正电场施加在通过该对扫描电极的离子束或带电粒子束之间。

公开(公告)号：US07276711B2

公开(公告)日：2007-10-02

申请号：US11150273

申请日：2005-06-13

申请人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

发明人： Hiroshi Kawaguchi ,  Takanori Yagita ,  Takashi Nishi ,  Junichi Murakami ,  Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC分类号： H01J37/317

CPC分类号： H01J37/026 ,  H01J37/3171

摘要： A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.

摘要翻译： 光束空间电荷补偿装置被应用于通过用离子束照射到晶片上进行处理的离子束处理系统中提供的角能量滤波器。 光束空间电荷补偿装置包括设置在角能量滤波器的光束引导室中的等离子体淋浴。 等离子体喷淋器包括具有用于产生等离子体的热电子的灯丝的电弧室。 电弧室包括用于提取热电子的提取孔。 等离子体淋浴器被布置成使得提取孔位于垂直于离子束行进方向的磁力线上，并且该细丝的中心轴线和所述提取孔的中心轴线与线条重合 的磁力，垂直于离子束前进方向的磁场。

公开(公告)号：US09601314B2

公开(公告)日：2017-03-21

申请号：US13495888

申请日：2012-06-13

申请人： Shiro Ninomiya ,  Tetsuya Kudo

发明人： Shiro Ninomiya ,  Tetsuya Kudo

IPC分类号： H01J37/317

CPC分类号： H01L21/26586 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/30483 ,  H01J2237/3171

摘要： An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.

公开(公告)号：US09305784B2

公开(公告)日：2016-04-05

申请号：US13748288

申请日：2013-01-23

申请人： SEN CORPORATION

发明人： Shiro Ninomiya ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC分类号： A61N5/00 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

摘要： On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

摘要翻译： 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US20140353518A1

公开(公告)日：2014-12-04

申请号：US14291766

申请日：2014-05-30

申请人： SEN CORPORATION

发明人： Masateru Sato

IPC分类号： H01J27/02

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/032 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/08 ,  H01J2237/31701

摘要： An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a first electrode and a second part connected to a second electrode and configured to support the first electrode to the second electrode, a first cover surrounding at least a part of the first part to protect the first part from contamination particles, and a second cover surrounding at least a part of the second part to protect the second part from contamination particles. At least one of the first part and the second part is made of a machinable ceramic or a porous ceramic.

摘要翻译： 提供了用于从等离子体产生部分提取离子束的多个电极之间设置的绝缘结构。 绝缘结构包括绝缘构件，该绝缘构件包括连接到第一电极的第一部分和连接到第二电极的第二部分，并被配置为将第一电极支撑到第二电极，第一盖围绕第一部分的至少一部分， 保护第一部分免受污染颗粒，以及围绕第二部分的至少一部分的第二盖，以保护第二部分免受污染颗粒。 第一部分和第二部分中的至少一个由可机加工的陶瓷或多孔陶瓷制成。

公开(公告)号：US20140345522A1

公开(公告)日：2014-11-27

申请号：US14286083

申请日：2014-05-23

申请人： SEN Corporation

发明人： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Inada ,  Makoto Sano

IPC分类号： H01L21/265 ,  H01L21/67

CPC分类号： H01L21/26506 ,  H01J37/05 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/04737 ,  H01J2237/053 ,  H01J2237/057

摘要： A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter.

摘要翻译： 高能离子注入机包括：束生成单元，其包括离子源和质谱仪; 射频多级线性加速单元; 偏转单元，其包括用于通过动量对离子进行过滤的磁场型能量分析装置; 梁输送线单元; 和基板处理/供给单元。 在该装置中，除了磁场型质谱仪之外，还在电场型光束准直仪和晶片之间插入通过电场使高能扫描光束在垂直方向上偏转的电场型最终能量过滤器， 作为动力滤波器的磁场型能量分析装置和作为速度滤波器的射频多级线性加速装置。

公开(公告)号：US20140283745A1

公开(公告)日：2014-09-25

申请号：US14219682

申请日：2014-03-19

申请人： SEN Corporation

发明人： Takayuki Nagai ,  Masateru Sato

IPC分类号： C23C16/44 ,  C23C16/30

CPC分类号： C23C14/564 ,  B08B7/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/182

摘要： An ion implantation apparatus in which a fluorine compound gas is used as a source gas of an ion source, includes a vacuum chamber into which the source gas is introduced; an introduction passage connected to the vacuum chamber and configured to introduce into the vacuum chamber a cleaning gas containing a component that reacts with the fluorine compound deposited inside the vacuum chamber so as to generate a reactant gas; a delivery device configured to forcibly introduce the cleaning gas into the introduction passage; a first adjustment device configured to adjust an amount of gas flow in the introduction passage; an exhausting passage connected to the vacuum chamber and configured to forcibly exhaust the reactant gas along with the cleaning gas; and a second adjustment device configured to adjust an amount of gas flow in the exhausting passage.

摘要翻译： 使用氟化合物气体作为离子源的源气体的离子注入装置包括：引入源气体的真空室; 引入通道，连接到真空室并且构造成将包含与沉积在真空室内的氟化合物反应的成分的清洁气体引入真空室，以产生反应气体; 配置成强制地将清洗气体导入导入通路的输送装置; 第一调节装置，被配置为调节所述引入通道中的气体流量; 排气通道，其连接到真空室，并且构造成与清洁气体一起强制排出反应气体; 以及第二调节装置，其构造成调节排气通道中的气体流量。

公开(公告)号：US20140235042A1

公开(公告)日：2014-08-21

申请号：US14259889

申请日：2014-04-23

申请人： SEN Corporation

发明人： Shiro NINOMIYA ,  Tetsuya Kudo ,  Akihiro Ochi

IPC分类号： H01L21/265 ,  H01J37/30 ,  H01J37/317

CPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额