公开(公告)号：US20110273952A1

公开(公告)日：2011-11-10

申请号：US13186769

申请日：2011-07-20

申请人： Koji NII ,  Shigeki Obayashi ,  Hiroshi Makino ,  Koichiro Ishibashi ,  Hirofumi Shinohara

发明人： Koji NII ,  Shigeki Obayashi ,  Hiroshi Makino ,  Koichiro Ishibashi ,  Hirofumi Shinohara

IPC分类号： G11C5/14

CPC分类号： G11C11/419 ,  G11C5/063 ,  G11C11/412

摘要： Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

摘要翻译： 单元电源线被布置用于存储单元列，并且分别根据相应列中的位线的电压电平来调整单元电源线的阻抗或电压电平。 在数据写入操作中，根据所选列的位线电位将单元电源线强制为浮置状态，并且电压电平改变，并且减小所选存储单元的锁存能力以快速写入数据。 即使使用低电源电压，也可以实现能够稳定地执行数据的写入和读取的静态半导体存储器件。

公开(公告)号：US07906761B2

公开(公告)日：2011-03-15

申请号：US12037623

申请日：2008-02-26

申请人： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

发明人： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC分类号： G01N23/225 ,  H01J49/00

CPC分类号： G01N23/225 ,  H01J37/265 ,  H01J37/28

摘要： A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

摘要翻译： 一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。 使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。 此外，优化了许多光学参数和设备参数。 此外，测量和调整所选择的一次光束的性质。

公开(公告)号：US07880143B2

公开(公告)日：2011-02-01

申请号：US11958717

申请日：2007-12-18

申请人： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

发明人： Sayaka Tanimoto ,  Hiroya Ohta ,  Hiroshi Makino ,  Ryuichi Funatsu

IPC分类号： H01J37/26

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/0435 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592

摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

摘要翻译： 由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。 此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。 此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

公开(公告)号：US07860592B2

公开(公告)日：2010-12-28

申请号：US10590704

申请日：2005-02-14

申请人： Fumihiko Kimura ,  Hiroshi Makino ,  Yoshikazu Matsuo

发明人： Fumihiko Kimura ,  Hiroshi Makino ,  Yoshikazu Matsuo

IPC分类号： G06F19/00

CPC分类号： G05B19/4103 ,  G05B2219/35146 ,  Y02P90/265

摘要： A trajectory of motion of the mechanical element is designed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable. A trajectory of a machine tool or a contour shape of a workpiece is expressed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable to control motion of the machine tool based on the three-dimensional curve.

摘要翻译： 通过使用被称为三维回旋曲线的三维曲线来设计机械元件的运动轨迹，其中在切向方向上的俯仰角和偏航角中的每一个由二次表达式给出 曲线长度或曲线长度变量。 通过使用被称为三维回旋曲线的三维曲线来表示机床的工具轨迹或工件的轮廓形状，其中给出切向方向上的俯仰角和偏航角中的每一个 通过曲线长度或曲线长度变量的二次表达式来基于三维曲线来控制机床的运动。

公开(公告)号：US07755776B2

公开(公告)日：2010-07-13

申请号：US11703154

申请日：2007-02-07

申请人： Hiroshi Makino ,  Masaki Hasegawa ,  Momoyo Enyama

发明人： Hiroshi Makino ,  Masaki Hasegawa ,  Momoyo Enyama

IPC分类号： G01B11/28

CPC分类号： G03F7/70616 ,  H01J37/20 ,  H01J37/222 ,  H01J37/265 ,  H01J37/29 ,  H01J2237/0048 ,  H01J2237/223 ,  H01J2237/226 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2583

摘要： There is a need for inspecting a heightwise variation in a sample. A holder holds a sample. A charge control unit charges the sample held by the holder. A retarding power supply applies a voltage to the sample held by the holder. An electro-optic system radiates an electron beam to the sample applied with a voltage by the retarding power supply and images a mirror electron returning near the surface of the sample. An image processing unit processes a mirror image resulting from imaging the mirror electron. The image processing unit outputs information corresponding to a difference between mirror images, i.e., a mirror image acquired by imaging the mirror electron and a mirror image for a prepared standard preparation, as a heightwise variation in a sample.

摘要翻译： 需要检查样品的高度变化。 持有人持有样本。 收费控制单元收取由持有人持有的样本。 延迟电源对由保持器保持的样品施加电压。 电光系统通过延迟电源将电子束辐射到施加有电压的样品，并对在样品表面附近返回的镜电子进行成像。 图像处理单元处理由镜电子成像产生的镜像。 图像处理单元输出与镜像相对应的信息，即通过将镜像电子成像获得的镜像和准备的标准品的镜像作为样品的高度变化。

公开(公告)号：US07728294B2

公开(公告)日：2010-06-01

申请号：US11808247

申请日：2007-06-07

申请人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

发明人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

IPC分类号： H01J37/21 ,  H01J37/26

CPC分类号： H01J37/20 ,  G01R31/307 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2008 ,  H01J2237/20235 ,  H01J2237/20292 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/28

摘要： A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.

摘要翻译： 提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。 将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。 来自待检查晶片的二次电子（或反射电子）10由充电控制电极5控制并由传感器11检测。图像处理器将来自传感器11的检测信号转换为检测图像， 通过预定的参考图像判断缺陷，总体控制部分14从每个要检查的晶片的配方信息中选择检查条件6并设置要施加到充电控制电极5的电压.Za级8设置晶片之间的距离 根据该电压检查6和充电控制电极5。

公开(公告)号：US07652248B2

公开(公告)日：2010-01-26

申请号：US11692263

申请日：2007-03-28

申请人： Hiroshi Makino ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

发明人： Hiroshi Makino ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/265 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/2817

摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.

摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。

公开(公告)号：US20090261252A1

公开(公告)日：2009-10-22

申请号：US12457734

申请日：2009-06-19

申请人： Masaki Hasegawa ,  Hisaya Murakoshi ,  Hiroshi Makino

发明人： Masaki Hasegawa ,  Hisaya Murakoshi ,  Hiroshi Makino

IPC分类号： G01N23/04

CPC分类号： H01J37/265 ,  G06T7/0004 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/29 ,  H01J2237/22 ,  H01J2237/24592

摘要： Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.

公开(公告)号：US20090166557A1

公开(公告)日：2009-07-02

申请号：US11338843

申请日：2006-01-25

申请人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

发明人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

IPC分类号： G21K5/10 ,  G01N23/00

CPC分类号： H01J37/073 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/0635 ,  H01J2237/24564 ,  H01J2237/2594

摘要： The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

摘要翻译： 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。

公开(公告)号：US07432503B2

公开(公告)日：2008-10-07

申请号：US11319721

申请日：2005-12-29

申请人： Toshifumi Honda ,  Hiroshi Makino

发明人： Toshifumi Honda ,  Hiroshi Makino

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  H01J37/1471 ,  H01J37/153 ,  H01J37/21 ,  H01J37/243 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1532 ,  H01J2237/216 ,  H01J2237/2487 ,  H01J2237/2817 ,  H01J2237/2826

摘要： In the present invention, in order to realize both a reduction of an image detecting time and high quality image detection in a scanning electron microscope for measurement, inspection, defect review, or the like of semiconductor wafers, a low-magnification image is taken by using a large beam current; a high-magnification image is taken by using a small beam current; control amounts for correcting a change in luminance, a focus deviation, misalignment, and visual field misalignment of taken images, which are generated due to a variation of a beam current are saved in advance in a memory of an overall control system; and these amounts are corrected every time the beam current is switched, thereby making it possible to take the images without any adjustment operation after switching the currents.

摘要翻译： 在本发明中，为了实现半导体晶片的测量，检查，缺陷检查等的扫描型电子显微镜中的图像检测时间的缩短和高质量图像检测，低倍率图像被采用 使用大束电流; 通过使用小束电流拍摄高倍率图像; 在整个控制系统的存储器中预先保存用于校正由于波束电流的变化而产生的拍摄图像的亮度变化，聚焦偏移，未对准和视场未对准的控制量; 并且每当切换电流时校正这些量，从而可以在切换电流之后进行没有任何调整操作的图像。