公开(公告)号：US08946567B2

公开(公告)日：2015-02-03

申请号：US12920296

申请日：2009-10-30

申请人： Kinya Nakatsu ,  Hiroshi Hozoji ,  Takeshi Tokuyama ,  Yusuke Takagi ,  Toshiya Satoh ,  Taku Oyama ,  Takanori Ninomiya

发明人： Kinya Nakatsu ,  Hiroshi Hozoji ,  Takeshi Tokuyama ,  Yusuke Takagi ,  Toshiya Satoh ,  Taku Oyama ,  Takanori Ninomiya

IPC分类号： H05K7/00 ,  H02M7/00 ,  B60L11/14 ,  B60L11/18 ,  H05K7/20 ,  H01L23/00

CPC分类号： H02M7/003 ,  B60L11/14 ,  B60L11/18 ,  B60L11/1803 ,  B60L2200/26 ,  B60L2210/40 ,  H01L21/4882 ,  H01L23/36 ,  H01L23/473 ,  H01L24/33 ,  H01L25/072 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H02M7/44 ,  H02M7/5395 ,  H02M2001/327 ,  H02P27/08 ,  H05K7/20409 ,  H05K7/205 ,  H05K7/209 ,  H05K7/20927 ,  Y02T10/70 ,  Y02T10/7005 ,  Y02T10/7077 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.

摘要翻译： 包括功率模块的功率模块和功率转换器装置包括：两个基板，它们的主表面相互面对; 设置在所述两个基板之间的半导体电路单元; 连接构件，其连接到所述两个基板并形成容纳所述半导体电路单元的壳体区域; 以及绝缘构件，其设置在所述基板和所述半导体电路单元之间，并且确保所述基板和所述半导体电路单元的电绝缘。 连接构件的刚性或厚度小于基板的刚度或厚度。

公开(公告)号：US08847374B2

公开(公告)日：2014-09-30

申请号：US13818490

申请日：2011-09-05

申请人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

发明人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

IPC分类号： H01L23/06 ,  H01L21/48 ,  H01L23/495 ,  H01L23/36 ,  H01L23/34 ,  H01L23/00 ,  H01L23/433 ,  H01L23/492 ,  H01L25/18 ,  H01L25/07

CPC分类号： H01L23/34 ,  H01L21/4825 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/3521 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37655 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/1305 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

摘要翻译： 功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板 通过第二焊料材料在功率半导体元件的另一个主表面上接合。 在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。 第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。 第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。 如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠 在第一导体板的基部与第一突起部之间。 功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

公开(公告)号：US20140197532A1

公开(公告)日：2014-07-17

申请号：US13983291

申请日：2011-03-04

申请人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

发明人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

IPC分类号： H01L23/367 ,  H01L21/52

CPC分类号： H01L23/3675 ,  H01L21/52 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/42 ,  H01L23/433 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

摘要翻译： 半导体模块包括壳体，该壳体包括由框架部分形成的容纳空间以及设置成彼此面对的壁对部分。 壁部包括散热部和在框架部分处支撑散热部的支撑壁，壁部包括散热部和支撑壁，该支撑壁在框架部分处支撑散热部 。 设置在壁部的散热部分别设置成面对多个半导体器件块。 多个单独的散热部被支撑壁包围，支撑壁变形为通过壳体内部的分离的散热部从框架部分凹陷，使得多个绝缘片紧密接合到多个 引线框架和多个散热部分。

公开(公告)号：US08743548B2

公开(公告)日：2014-06-03

申请号：US13241600

申请日：2011-09-23

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Atushi Kawabata

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Atushi Kawabata

IPC分类号： H05K5/00 ,  H01L23/34 ,  H01L23/48

CPC分类号： H05K7/02 ,  H01G2/08 ,  H01G4/224 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H02M7/003 ,  Y02T10/7022 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides an electric circuit device in which it is possible to achieve simultaneously the improvement of cooling performance and reduction in operating loss due to line inductance. The above object can be attained by constructing multiple plate-like conductors so that each of these conductors electrically connected to multiple semiconductor chips is also thermally connected to both chip surfaces of each such semiconductor chip to release heat from the chip surfaces of each semiconductor chip, and so that among the above conductors, a DC positive-polarity plate-like conductor and a DC negative-polarity plate-like conductor are opposed to each other at the respective conductor surfaces.

摘要翻译： 本发明提供一种电路装置，其中可以同时实现冷却性能的提高和由于线路电感引起的工作损耗的降低。 上述目的可以通过构造多个板状导体来实现，使得电连接到多个半导体芯片的这些导体中的每一个也热连接到每个这样的半导体芯片的两个芯片表面，以从每个半导体芯片的芯片表面释放热量， 并且使得在上述导体中，DC正极板状导体和DC负极板状导体在各导体表面处彼此相对。

公开(公告)号：US08653652B2

公开(公告)日：2014-02-18

申请号：US13499520

申请日：2010-08-24

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

IPC分类号： H01L23/34

CPC分类号： H02M7/003 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L25/072 ,  H01L2224/33 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

摘要翻译： 一种半导体器件包括：形成有开口的壳体; 容纳在壳体内的半导体元件; 容纳在壳体内并位于半导体元件的一个表面侧的第一导体板; 第二导体板，容纳在所述壳体内并且位于所述半导体元件的另一表面侧; 电连接到第一导体板的正母线，通过其提供直流电力; 电连接到第二导体板的负母线，通过其提供直流电力; 封闭壳体上的开口的第一树脂构件; 以及第二树脂构件，其密封半导体元件，第一导体板和第二导体板，并且由构成第一树脂构件的材料以外的材料构成。

公开(公告)号：US20130119525A1

公开(公告)日：2013-05-16

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。

公开(公告)号：US08416574B2

公开(公告)日：2013-04-09

申请号：US13152505

申请日：2011-06-03

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Keisuke Horiuchi ,  Toshiya Satoh ,  Hideki Miyazaki

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Keisuke Horiuchi ,  Toshiya Satoh ,  Hideki Miyazaki

IPC分类号： H05K7/20

CPC分类号： H05K7/20927 ,  B60K6/26 ,  B60K6/28 ,  B60K6/46 ,  B60K17/16 ,  B60L11/1803 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/429 ,  B60Y2200/92 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/473 ,  H01L23/492 ,  H01L23/49517 ,  H01L24/45 ,  H01L25/072 ,  H01L2224/40137 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1203 ,  H01L2924/13055 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H05K1/0262 ,  H05K7/2089 ,  Y10S903/906 ,  Y10S903/907 ,  Y10S903/909 ,  H01L2924/00 ,  H01L2224/45099

摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that comprises an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module comprises a first and a second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further comprises a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.

摘要翻译： 电力转换装置包括：形成冷却水通道的通道壳体; 包括逆变器电路的上臂和下臂串联电路的双面冷却半导体模块; 电容器模块; 直流连接器; 和备用电流连接器。 半导体模块包括第一和第二散热金属，其外表面是散热表面，上下臂串联电路紧密地设置在第一散热金属和第二散热金属之间，并且半导体模块还包括 直流正极端子，直流负极端子和突出到外部的交流电流端子。 通道壳体设置有从冷却水入口延伸到冷却水出口的冷却水通道以及通向冷却水通道的第一开口。

公开(公告)号：US20130062724A1

公开(公告)日：2013-03-14

申请号：US13638394

申请日：2011-03-30

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Toshiya Satoh ,  Hideaki Ishikawa

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Toshiya Satoh ,  Hideaki Ishikawa

IPC分类号： H01L27/04 ,  H01L23/48

CPC分类号： H05K7/1432 ,  H01L23/492 ,  H01L24/33 ,  H01L24/40 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M1/32 ,  H02M7/003 ,  H05K7/20927 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0103 ,  H01L2924/01048 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A power module includes a semiconductor chip, a first coupling conductor with one main surface coupled to one main surface of the semiconductor chip, a second coupling conductor with one main surface coupled to the other main surface of the semiconductor chip, a coupling terminal supplied with electrical power from the direct current power source, and resin material to seal the semiconductor chip, and in which the resin member has a protruding section that protrudes from the space where the first and second coupling conductors are formed opposite each other, and the coupling terminal is clamped on the protruding section, and at least one of the first or second coupling conductors is coupled to a coupling terminal by way of a metallic material that melts at a specified temperature.

摘要翻译： 功率模块包括半导体芯片，具有耦合到半导体芯片的一个主表面的一个主表面的第一耦合导体，具有耦合到半导体芯片的另一主表面的一个主表面的第二耦合导体， 来自直流电源的电力和用于密封半导体芯片的树脂材料，并且其中树脂构件具有从第一和第二耦合导体彼此相对的空间突出的突出部分，并且耦合端子 被夹紧在突出部分上，并且第一或第二耦合导体中的至少一个通过在特定温度下熔化的金属材料耦合到耦合端子。

公开(公告)号：USD651565S1

公开(公告)日：2012-01-03

申请号：US29354620

申请日：2010-01-27

申请人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

设计人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

公开(公告)号：US08081472B2

公开(公告)日：2011-12-20

申请号：US12715025

申请日：2010-03-01

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Atushi Kawabata

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Atushi Kawabata

IPC分类号： H05K5/00 ,  H01L23/34 ,  H01L23/48

CPC分类号： H05K7/02 ,  H01G2/08 ,  H01G4/224 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H02M7/003 ,  Y02T10/7022 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides an electric circuit device in which it is possible to achieve simultaneously the improvement of cooling performance and reduction in operating loss due to line inductance. The above object can be attained by constructing multiple plate-like conductors so that each of these conductors electrically connected to multiple semiconductor chips is also thermally connected to both chip surfaces of each such semiconductor chip to release heat from the chip surfaces of each semiconductor chip, and so that among the above conductors, a DC positive-polarity plate-like conductor and a DC negative-polarity plate-like conductor are opposed to each other at the respective conductor surfaces.