公开(公告)号：US20210066051A1

公开(公告)日：2021-03-04

申请号：US16664155

申请日：2019-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular ring configured to surround a substrate support; and an annular lip extending from an upper surface of the annular ring, wherein the annular ring includes a plurality of ring slots extending through the annular ring and disposed at regular intervals along the annular ring, and wherein the annular lip includes a plurality of lip slots extending through the annular lip disposed at regular intervals along the annular lip.

公开(公告)号：US10677830B2

公开(公告)日：2020-06-09

申请号：US15649600

申请日：2017-07-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Jacob Newman ,  Preetham Rao ,  Yuichi Wada ,  Vinodh Ramachandran

IPC: G01R29/08 ,  H01L21/67 ,  H05B6/80 ,  H05B6/64

Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.

公开(公告)号：US20180323091A1

公开(公告)日：2018-11-08

申请号：US15966211

申请日：2018-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham Rao ,  Dennis Ivanov ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow

IPC: H01L21/67 ,  H05B6/64 ,  H05B6/66 ,  H05B6/70

CPC classification number: H01L21/67115 ,  H05B6/6402 ,  H05B6/664 ,  H05B6/705 ,  H05B6/707

Abstract: Methods and apparatus for uniform thermal distribution across semiconductor batches are provided herein. According to one embodiment, a microwave oven for semiconductor processing, comprising a thermal housing having a cavity and a plurality of input ports, a power source configured to provide a microwave signal to the cavity of the thermal housing via the plurality of input ports, a phase shifter disposed between the power source and the input ports, wherein the phase shifter is configured to vary a phase difference between two or more signals provided to it; and a controller communicatively coupled to the phase shifter and configured to control the phase difference between the two or more signals.

公开(公告)号：US09548200B2

公开(公告)日：2017-01-17

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。

公开(公告)号：US08895450B2

公开(公告)日：2014-11-25

申请号：US14054477

申请日：2013-10-15

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/28 ,  C23C14/35 ,  H01L21/285 ,  C23C14/34 ,  H01L29/49 ,  C23C14/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US12237186B2

公开(公告)日：2025-02-25

申请号：US17945910

申请日：2022-09-15

Applicant: Applied Materials, Inc.

Inventor： Ruiping Wang ,  Ying Wang ,  Guan Huei See ,  Ananthkrishna Jupudi ,  Praveen Kumar Choragudi

IPC: H01L21/67 ,  B08B1/10 ,  B08B3/04 ,  B08B7/00 ,  B08B13/00 ,  F26B25/14 ,  G06T1/00 ,  H01L21/683

Abstract: Methods and apparatus for cleaning tooling parts in a substrate processing tool are provided herein. In some embodiments, a method of cleaning tooling parts in a substrate processing tool includes placing one or more dirty tools on a holder in a bonding chamber of a multi-chamber processing tool; transferring the holder from the bonding chamber to a cleaning chamber of the multi-chamber processing tool; cleaning the one or more dirty tools in the cleaning chamber to produce one or more cleaned tools; inspecting the one or more cleaned tools in an inspection chamber of the multi-chamber processing tool; and transferring the one or more cleaned tools to the bonding chamber.

公开(公告)号：US11870202B2

公开(公告)日：2024-01-09

申请号：US17009851

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Rajesh Kumar Putti ,  Vinodh Ramachandran ,  Ananthkrishna Jupudi ,  Lean Wui Koh ,  Prashant Agarwal

IPC: H03F1/52 ,  H01S3/041 ,  H01S3/067 ,  H01S3/042 ,  H01S3/23

CPC classification number: H01S3/041 ,  H01S3/042 ,  H01S3/06779 ,  H01S3/06783 ,  H01S3/2308

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

公开(公告)号：US11670525B2

公开(公告)日：2023-06-06

申请号：US16363537

申请日：2019-03-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Preetham P. Rao ,  Ananthkrishna Jupudi ,  Ribhu Gautam

IPC: H01L21/67 ,  H05B6/76 ,  H05B6/64

CPC classification number: H01L21/67115 ,  H05B6/6408 ,  H05B6/76

Abstract: Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.

公开(公告)号：US11361981B2

公开(公告)日：2022-06-14

申请号：US16198417

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Shashidhara Patel ,  Ananthkrishna Jupudi ,  Ribhu Gautam

IPC: H01L21/677 ,  C23C16/458 ,  H01L21/68 ,  H01L21/673

Abstract: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.

公开(公告)号：US11251028B2

公开(公告)日：2022-02-15

申请号：US16405070

申请日：2019-05-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Cheng-Hsiung Matt Tsai ,  Ananthkrishna Jupudi ,  Sarath Babu ,  Manjunatha P. Koppa ,  Hiroyuki Takahama

IPC: H01L21/67 ,  H01L21/68 ,  H01J37/34 ,  C23C14/02 ,  H01L21/687 ,  H01L21/677

Abstract: Substrate processing chambers with integrated shutter garage are provided herein. In some embodiments, a pre-clean substrate processing chamber may include a chamber body, wherein the chamber body includes a first side configured to be attached to mainframe substrate processing tool, and a second side disposed opposite the first side, a substrate support configured to support a substrate when disposed thereon, a shutter disk garage disposed on the second side of the process chamber, and a shutter disk assembly mechanism comprising a rotatable shaft, and a robot shutter arm coupled to the shaft, wherein the robot shutter arm includes a shutter disk assembly support section configured to support a shutter disk assembly, and wherein the shutter disk assembly mechanism is configured to move the robot shutter arm between a storage position within the shutter garage and a processing position within the process chamber over the substrate support.