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    Deposition of metal doped amorphous carbon film
    32.
    发明授权
    Deposition of metal doped amorphous carbon film 有权

    公开(公告)号：US09624577B2

    公开(公告)日：2017-04-18

    申请号：US14697385

    申请日：2015-04-27

    Applicant: Applied Materials, Inc.

    Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Mukund Srinivasan ,  Rui Cheng

    IPC: C23F1/02 ,  C23C16/26 ,  C23C16/04 ,  C23C16/06 ,  H01J37/32 ,  C23C16/30

    CPC classification number: C23C16/26 ,  C23C16/042 ,  C23C16/06 ,  C23C16/30 ,  H01J37/32091

    Abstract: Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.

    Semiconductor process equipment
    36.
    发明授权
    Semiconductor process equipment 有权

    公开(公告)号：US10056279B2

    公开(公告)日：2018-08-21

    申请号：US15004406

    申请日：2016-01-22

    Applicant: Applied Materials, Inc.

    Inventor： Karthik Janakiraman ,  Hari K. Ponnekanti ,  Juan Carlos Rocha ,  Mukund Srinivasan

    IPC: H01L21/677

    CPC classification number: H01L21/67709 ,  H01L21/67736 ,  H01L21/67742

    Abstract: A system for processing a substrate is provided including a first planar motor, a substrate carrier, a first processing chamber, and a first lift. The first planar motor includes a first arrangement of coils disposed along a first horizontal direction, a top surface parallel to the first horizontal direction, a first side, a second side. The substrate carrier has a substrate supporting surface parallel to the first horizontal direction. The first processing chamber has an opening to receive a substrate disposed on the substrate carrier. The first lift includes a second planar motor having a second arrangement of coils disposed along the first horizontal direction. A top surface top surface of the second planar motor is parallel to the first horizontal direction. The first lift is configured to move the top surface of the second planar motor between a first vertical location and a second vertical location.

    Low-K dielectric gapfill by flowable deposition
    37.
    发明授权
    Low-K dielectric gapfill by flowable deposition 有权
    低K电介质间隙填充可流动沉积

    公开(公告)号：US09412581B2

    公开(公告)日：2016-08-09

    申请号：US14333262

    申请日：2014-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Kiran V. Thadani ,  Jingmei Liang ,  Young S. Lee ,  Mukund Srinivasan

    IPC: C23C16/452 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/02

    CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274

    Abstract: Methods are described for forming a flowable low-k dielectric layer on a patterned substrate. The film may be a silicon-carbon-oxygen (Si—C—O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. A similarly deposited silicon oxide layer may be deposited first to improve the gapfill capabilities. Alternatively, or in combination, the flow of a silicon-and-carbon-containing precursor may be reduced during deposition to change the properties from low-k to high strength roughly following the filling of features of the patterned substrate.

    Abstract translation: 描述了在图案化衬底上形成可流动的低k电介质层的方法。 该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中激活的含氧前体 。 可以首先沉积类似沉积的氧化硅层以改善间隙填充能力。 或者或组合地，可以在沉积期间减少含硅和碳的前体的流动，以便在填充图案化衬底的特征之后将性质从低k改变为高强度。

    Deposition of heteroatom-doped carbon films
    38.
    发明授权
    Deposition of heteroatom-doped carbon films 有权
    沉积掺杂杂质的碳膜

    公开(公告)号：US09406509B2

    公开(公告)日：2016-08-02

    申请号：US14161313

    申请日：2014-01-22

    Applicant: Applied Materials, Inc.

    Inventor： Pramit Manna ,  Abhijit Basu Mallick ,  Mukund Srinivasan

    IPC: H01L21/31 ,  H01L21/027 ,  H01L21/311

    CPC classification number: H01L21/0271 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/31133 ,  H01L21/31144 ,  Y10T428/24802

    Abstract: Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices.

    Abstract translation: 沉积易于除去的杂原子掺杂的含碳层。 含碳层可以用作硬掩模。 掺杂掺杂碳的硬掩模具有高蚀刻选择性和密度以及低压缩应力，这将减少或消除晶片弓的问题。 掺入硬掩模的杂原子包括硫，磷，氮，氧和氟，所有这些对于常用的蚀刻剂具有低反应性。 当使用硫作为杂原子时，硬掩模容易去除，这简化了NAND​​器件，DRAM器件和其它器件的制造。

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