摘要:
The power conversion apparatus includes an inverter circuit which converts a DC current into an AC current and have a U-phase, V-phase, and w-phase power semiconductor modules, and a capacitor module for smoothing the DC current. Each of the power semiconductor modules is configured separately and connected to a first bus bar. The first bus bar is configured with a first positive side bus bar, a first negative side bus bar, and a first insulation member arranged between the first positive side bus bar and the first negative side bus bar. The first bus bar includes a first to third terminals to which the U-phase, V-phase, and W-phase power semiconductor modules are connected, respectively, and a fourth terminal connected to a terminal of the second bus bar protruding from a surface of sealing material of a second bus bar.
摘要:
A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.
摘要:
The power conversion apparatus includes an inverter circuit which converts a DC current into an AC current and have a U-phase, V-phase, and w-phase power semiconductor modules, and a capacitor module for smoothing the DC current. Each of the power semiconductor modules is configured separately and connected to a first bus bar. The first bus bar is configured with a first positive side bus bar, a first negative side bus bar, and a first insulation member arranged between the first positive side bus bar and the first negative side bus bar. The first bus bar includes a first to third terminals to which the U-phase, V-phase, and W-phase power semiconductor modules are connected, respectively, and a fourth terminal connected to a terminal of the second bus bar protruding from a surface of sealing material of a second bus bar.
摘要:
A power module according to the present invention includes: a semiconductor element for converting DC current to AC current by switching operation; an electrical wiring board to which the semiconductor element is electrically connected, with the semiconductor element being disposed upon one of its principal surfaces; an insulating resin layer provided on the other principal surface of the electrical wiring board; a first insulation layer that is disposed opposite from the electrical wiring board, separated by the insulating resin layer, and that is joined to the insulating resin layer; a second insulation layer that is disposed opposite from the insulating resin layer, separated by the first insulation layer, and that ensures electrical insulation of the semiconductor element; and a metallic heat dissipation member that is disposed opposite from the first insulation layer, separated by the second insulation layer, and that radiates heat generated by the semiconductor element via the electrical wiring board, the insulating resin layer, the first insulation layer, and the second insulation layer.
摘要:
A power conversion device for a vehicle includes: a power module that includes a switching device and, upon operation of the switching device, converts DC power into AC power to be supplied to an electric machine for driving a vehicle; a capacitor module that includes a smoothing capacitor element, an input-side power source terminal for receiving DC power, and an output-side power source terminal for supplying DC power to the power module; and a noise removal capacitor for removing noise, wherein: the noise removal capacitor is built in the capacitor module, and the noise removal capacitor is electrically connected to the input-side power source terminal in a position where a distance between a connection position of the noise removal capacitor and the input-side power source terminal is less than a distance between a connection position of the noise removal capacitor and the output-side power source terminal of the capacitor module.
摘要:
An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that comprises an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module comprises a first and a second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further comprises a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.
摘要:
An image forming apparatus includes an image carrier, a developing device that forms a toner image on the surface of the image carrier, a transfer unit that transfers the toner image formed on the image carrier onto a transfer material such as paper, a neutralizing unit that neutralizes an electrostatic latent image on the surface of the image carrier by light radiation, a cleaning unit that cleans toner remaining on the surface of the image carrier after the toner image is transferred. The image carrier, the developing device, the transfer unit, the neutralizing unit, and the cleaning unit are provided to the main body of the image forming apparatus. The image forming apparatus further includes a withdrawal mechanism that withdraws at least the image carrier, the cleaning unit, and the neutralizing unit integrally from the main body of the image forming apparatus.
摘要:
Semiconductor devices, semiconductor wafers, and semiconductor modules are provided, wherein: the semiconductor device has a small warp; damage at the chip edge and cracks occurring in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor includes a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on the same plane.
摘要:
A miniature semiconductor apparatus is outstanding in reflow resistance, temperature cycle property, and PCT resistance corresponding to high density packing, high densification, and speeding up of processing. The semiconductor apparatus has at least one stress cushioning layer on a semiconductor element with an electrode pad formed, having a conductor on the stress cushioning layer, having a conductor for conducting the electrode pad and conductor via a through hole passing through the stress cushioning layer between the electrode pad and the conductor, having an external electrode on the conductor, and having a stress cushioning layer in an area other than the area where the external electrode exists and a conductor protection layer on the conductor, wherein the stress cushioning layer includes crosslinking acrylonitrile-butadiene rubber having an epoxy resin which is solid at 25° C. and a carboxyl group.
摘要:
A manufacturing method makes it possible to produce a semiconductor apparatus which is outstanding in mounting reliability at a high manufacturing yield rate. A semiconductor apparatus, in which, on the surface of a semiconductor chip with a circuit and an electrode formed thereon, a stress cushioning layer is provided, except for a part where the electrode is, has a wiring layer connected to the electrode on the stress cushioning layer, an external protection film on the wiring layer and stress cushioning layer, a window where a part of the wiring layer is exposed at a predetermined location of the external protection film, and an external electrode which is electrically connected to the wiring layer via the window. The stress cushioning layer, wiring layer, conductor, external protection film, and external electrode are formed on the inside of the end of the semiconductor chip.