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105 条记录 (耗时 0.028 秒)

    Semiconductor device and method of manufacturing the same
    32.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US07728434B2

    公开(公告)日：2010-06-01

    申请号：US11962154

    申请日：2007-12-21

    申请人： Akira Furuya

    发明人： Akira Furuya

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller.

    摘要翻译： 为了提高半导体器件中的上下互连之间的粘合性，本发明的半导体器件包括形成在基板上并包含下互连的第二介质多层膜; 形成在所述第二电介质多层膜上并具有凹部的第一电介质多层膜; 形成在凹部的内壁上并含有金属M和氧作为主要成分的MOx膜; 形成在MOx膜上并含有M作为主要成分的M膜; 以及形成在M膜上的电导体，以填充凹部，并且包含Cu作为主要成分，其中互连的表面部分在凹部的底部下方直线的氧浓度为1％以下。

    Bearing case for engine
    34.
    发明授权
    Bearing case for engine 失效
    发动机轴承箱

    公开(公告)号：US06799548B2

    公开(公告)日：2004-10-05

    申请号：US09864074

    申请日：2001-05-22

    申请人： Akira Furuya

    发明人： Akira Furuya

    IPC分类号： F02F700

    CPC分类号： F02B75/16 ,  F02B63/02 ,  F02B2275/20 ,  F02F7/0004

    摘要： A main bearing case has a bearing holder for holding a bearing for supporting a crankshaft, and a crankcase mounting section at which it is joined to a crankcase. Spherical rib walls are formed on one face of the main bearing case opposite to the crankcase for connecting the bearing holder and the crankcase mounting section, on the upper side with respect to the axis of the crankshaft. Force radially exerted to the crankshaft is received by these rib walls, increasing the rigidity of the main bearing case, whereby deformation and play thereof are prevented.

    摘要翻译： 主轴承箱具有用于保持用于支撑曲轴的轴承的轴承座和与曲轴箱接合的曲轴箱安装部。 在主轴承箱的与曲轴箱相对的一个面上形成有球面肋壁，用于将轴承保持架和曲轴箱安装部分相对于曲轴的轴线在上侧相连接。 径向施加到曲轴的力被这些肋壁容纳，从而增加了主轴承箱的刚性，从而防止了其变形和打击。

    Lubricating system for OHC engine
    35.
    发明授权
    Lubricating system for OHC engine 有权
    OHC发动机润滑系统

    公开(公告)号：US06561315B2

    公开(公告)日：2003-05-13

    申请号：US09864071

    申请日：2001-05-22

    申请人： Akira Furuya ,  Takao Sakai

    发明人： Akira Furuya ,  Takao Sakai

    IPC分类号： F01M100

    CPC分类号： F02B75/16 ,  F01M1/04 ,  F01M9/06 ,  F02B63/02 ,  F02B2275/20

    摘要： A scraper is provided in a large end portion of a connecting rod in an inclined type of overhead camshaft engine to lubricate a timing system by dipping a lubricating oil stored in a lower portion of a crank case up. The scraper includes a bottom wall and a side wall set up on the bottom wall, and have a substantially L-shaped cross-section. An angle between the bottom wall and the side wall is set in a range of 60° to 90°. Thus, the droplets of the oil can be splashed to the side direction of scraper also in three-dimensional inclined direction, so that oil can be securely supplied to and lubricate the timing system which is offset from the scraper in a longitudinal direction of the crankshaft.

    摘要翻译： 在倾斜式顶置凸轮轴发动机的连杆的大端部设置有刮刀，通过将存储在曲轴箱的下部的润滑油向上浸渍来润滑定时系统。 刮板包括底壁和设置在底壁上的侧壁，并且具有大致L形的横截面。 底壁和侧壁之间的角度设定在60°至90°的范围内。 因此，油的液滴也可以在三维倾斜方向上溅到刮板的侧面方向，从而可以将油可靠地供给到润滑油，并沿着曲轴的纵向方向润滑从刮刀偏移的定时系统 。

    Method of fabricating ferroelectric integrated circuit using dry and wet etching
    36.
    发明授权
    Method of fabricating ferroelectric integrated circuit using dry and wet etching 失效
    使用干法和湿蚀刻制作铁电集成电路的方法

    公开(公告)号：US06207465B1

    公开(公告)日：2001-03-27

    申请号：US09062248

    申请日：1998-04-17

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： H01L2100

    CPC分类号： H01L27/11502 ,  H01L21/28568 ,  H01L21/32132 ,  H01L21/32134 ,  H01L21/32136 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

    摘要： In a ferroelectric integrated circuit, a hydrogen barrier layer comprising titanium or titanium nitride or both is formed over a metal oxide element to protect it from hydrogen degradation. After hydrogen annealing and other process steps causing hydrogenating or reducing conditions, the hydrogen barrier layer is removed in a two-step etching process. The first etch step is a dry etch, preferably a standard ion-mill etching process, which rapidly removes most of the hydrogen barrier layer. The second step is a wet, chemical etch, preferably using a solution containing NH4OH, H2O2, and H2O, which selectively removes remnants of the hydrogen barrier layer from the circuit by oxidizing a chemical element of the barrier layer. The metal oxide material preferably comprises a layered superlattice compound.

    摘要翻译： 在铁电集成电路中，在金属氧化物元件上形成包含钛或氮化钛或二者的氢阻挡层，以防止其降解氢。 在氢退火和引起氢化或还原条件的其它工艺步骤之后，在两步蚀刻工艺中除去氢气阻挡层。 第一蚀刻步骤是干蚀刻，优选标准离子磨蚀刻蚀工艺，其快速去除大部分氢阻挡层。 第二步是湿化学蚀刻，优选使用含有NH 4 OH，H 2 O 2和H 2 O的溶液，其通过氧化阻挡层的化学元素从电路中选择性地除去氢阻挡层的残余物。 金属氧化物材料优选包含层状超晶格化合物。

    Method for fabricating ferroelectric integrated circuits
    37.
    发明授权
    Method for fabricating ferroelectric integrated circuits 失效
    铁电集成电路的制造方法

    公开(公告)号：US6130103A

    公开(公告)日：2000-10-10

    申请号：US62283

    申请日：1998-04-17

    申请人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    发明人： Joseph D. Cuchiaro ,  Akira Furuya ,  Carlos A. Paz de Araujo ,  Yoichi Miyasaka

    IPC分类号： G11C11/22 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L27/115 ,  H01L21/00 ,  H01L21/8242

    CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L21/28291 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L21/324 ,  H01L28/56

    摘要： An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to the some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer, preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element. A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200.degree. to 350.degree. C. and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800.degree. C. after high-energy hydrogen steps restores ferroelectric properties.

    摘要翻译： 形成集成电路，其包含含有至少两种金属的金属氧化物材料的铁电体元件。 应用各种方法和结构以最小化在电路制造期间由氢引起的铁电性能的劣化。 在制造步骤期间，将氧气添加到集成电路的一些元件以用作氢气的吸气剂。 为了使氢降解最小化，铁电化合物可以由含有一种或多种构成金属的液体前体制成，超过对应于化学计量平衡浓度的量。 形成优选包含氮化钛的氢阻挡层以覆盖铁电元件的顶部。 在集成电路中在200〜350℃的温度下进行氢气中的氢热处理，并且在不超过30分钟的时间内对氢的铁电性质的降低最小化，同时恢复集成电路的其它性能 。 在高能氢步骤之后，在800℃下的氧回收退火恢复铁电性能。

    Electrostatic chuck and method of manufacturing semiconductor device
    39.
    发明授权
    Electrostatic chuck and method of manufacturing semiconductor device 有权
    静电卡盘及制造半导体装置的方法

    公开(公告)号：US09543182B2

    公开(公告)日：2017-01-10

    申请号：US13305139

    申请日：2011-11-28

    申请人： Akira Furuya ,  Takamitsu Kitamura

    发明人： Akira Furuya ,  Takamitsu Kitamura

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6833

    摘要： An electrostatic chuck device including: a plurality of adsorption areas having an electrode generating electrostatic attractive force; and a control portion controlling the electrostatic attractive force against each of the plurality of the adsorption areas independently of other adsorption areas.

    摘要翻译： 一种静电吸盘装置，包括：具有产生静电吸引力的电极的多个吸附区域; 以及控制部分，其独立于其他吸附区域控制对所述多个吸附区域中的每一个的静电吸引力。

    Method for manufacturing a semiconductor device
    40.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08642472B2

    公开(公告)日：2014-02-04

    申请号：US13495586

    申请日：2012-06-13

    申请人： Akira Furuya

    发明人： Akira Furuya

    IPC分类号： H01L21/44

    CPC分类号： H01L23/485 ,  H01L21/2885 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed.

    摘要翻译： 凹陷部分中的空隙的产生被抑制。 一种制造半导体器件的方法包括：形成在半导体衬底上的绝缘膜中形成凹部的操作; 在凹部中形成种子膜的操作; 在凹部中形成覆盖金属膜的动作; 选择性地去除覆盖金属膜以将种子膜暴露在凹部的底部上的操作; 以及通过利用暴露在凹部的底部中的种子膜作为种子来进行镀膜的生长以填充凹部的操作。