公开(公告)号：US20100007016A1

公开(公告)日：2010-01-14

申请号：US12172373

申请日：2008-07-14

申请人： Klaus-Guenter Oppermann ,  Martin Franosch

发明人： Klaus-Guenter Oppermann ,  Martin Franosch

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/488 ,  H01L21/486 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05599 ,  H01L2224/1131 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

摘要： A device with contact elements. One embodiment provides an electrical device including a structure defining a main face. The structure includes an array of cavities and an array of overhang regions, each overhang region defining an opening to one of the cavities. The electrical device further includes an array of contact elements, each contact element only partially filling one of the cavities and protruding from the structure over the main face.

摘要翻译： 具有接触元件的设备。 一个实施例提供一种电气设备，其包括限定主面的结构。 该结构包括空腔阵列和突出区域阵列，每个悬出区域限定到一个空腔的开口。 电气装置还包括接触元件的阵列，每个接触元件仅部分地填充其中一个空腔并从主面上的结构突出。

公开(公告)号：US20090261327A1

公开(公告)日：2009-10-22

申请号：US12106667

申请日：2008-04-21

申请人： Herbert Schaefer ,  Martin Franosch ,  Thomas Meister ,  Josef Boeck

发明人： Herbert Schaefer ,  Martin Franosch ,  Thomas Meister ,  Josef Boeck

IPC分类号： H01L27/00 ,  H01L21/62

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661

摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

摘要翻译： 本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。 在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。 单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。 沉积包括形成两个或更多个子层。 可以为每个单独的子层改变工艺参数以优化沉积特性。

公开(公告)号：US20080224297A1

公开(公告)日：2008-09-18

申请号：US11724603

申请日：2007-03-15

申请人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

发明人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

IPC分类号： H01L23/15 ,  H01L21/58 ,  H01L23/48

CPC分类号： H03H9/02125 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

摘要翻译： 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

公开(公告)号：US07234237B2

公开(公告)日：2007-06-26

申请号：US10821798

申请日：2004-04-09

申请人： Martin Franosch ,  Andreas Meckes ,  Klaus-Günter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Klaus-Günter Oppermann

IPC分类号： H01R43/00

CPC分类号： B81C1/00333 ,  B81C2203/0136 ,  H03H3/02 ,  H03H3/08 ,  H03H9/105 ,  H03H9/1092 ,  Y10S156/93 ,  Y10S438/976 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/4922 ,  Y10T29/49224 ,  Y10T29/49798 ,  Y10T156/1082 ,  Y10T156/11

摘要： In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first portion covering a first area of the substrate including the device and a second portion extending from the first portion into a second area of the substrate including no device. Then a first cover layer is deposited that encloses the sacrificial structure such that the second portion of the sacrificial structure is at least partially exposed. Then the sacrificial structure is removed, and the structure formed by the removal of the sacrificial structure is closed.

摘要翻译： 在用于生产用于形成在衬底中的器件的保护罩的方法中，首先在衬底上产生牺牲结构，其中牺牲结构包括覆盖包括该器件的衬底的第一区域的第一部分和延伸 从第一部分到不包括器件的衬底的第二区域。 然后沉积包围牺牲结构的第一覆盖层，使得牺牲结构的第二部分至少部分地暴露。 然后去除牺牲结构，并且通过去除牺牲结构形成的结构是封闭的。

公开(公告)号：US20050146022A1

公开(公告)日：2005-07-07

申请号：US10992627

申请日：2004-11-17

申请人： Martin Franosch ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Winfried Nessler ,  Klaus-Gunter Oppermann

IPC分类号： B81B7/00 ,  H01L23/12

CPC分类号： B81C1/00293 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/0271 ,  B81C2203/0136 ,  B81C2203/0145 ,  Y10S438/977

摘要： Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure to form a cavity together with the substrate between the substrate and the photo-resist material structure, wherein the cavity separates the micromechanical structure and the photo-resist material structure and has an opening, and a closure for closing the opening to close the cavity.

摘要翻译： 用于容纳微机械结构的装置，以及用于制造外壳的方法。 该装置具有基板，其上形成有微机械结构的主侧面，围绕微机械结构的光致抗蚀剂材料结构，与基板和光刻胶材料结构之间的基板一起形成空腔，其中空腔分离 微机械结构和光致抗蚀剂材料结构并具有开口，以及用于封闭开口以封闭空腔的封闭件。

公开(公告)号：US06903454B2

公开(公告)日：2005-06-07

申请号：US10324874

申请日：2002-12-20

申请人： Matthias Goldbach ,  Albert Birner ,  Martin Franosch

发明人： Matthias Goldbach ,  Albert Birner ,  Martin Franosch

IPC分类号： G01R1/067 ,  G01R1/073 ,  H01L23/48

CPC分类号： G01R1/06727 ,  G01R1/07357 ,  G01R3/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： A contact spring configuration for contacting semiconductor wafers is provided. At least one strip-type contact spring is provided on a substrate. The contact spring is fixed to a surface of the substrate on one side and is composed of a semiconductor material having a stress gradient which causes a permanent bending of the contact spring. The stress gradient in the semiconductor material is brought about by two semiconductor layers which are connected to one another and are mechanically strained differently. The different strains can be set by different doping or by deposition temperatures of different magnitude during the deposition of the semiconductor layers. The contact springs provide a good ohmic contact in particular with contact regions of a semiconductor wafer that are composed of a semiconductor material.

摘要翻译： 提供了用于接触半导体晶片的接触弹簧构造。 至少一个带状接触弹簧设置在基板上。 接触弹簧在一侧固定到基板的表面，并且由具有引起接触弹簧的永久弯曲的应力梯度的半导体材料构成。 半导体材料中的应力梯度由彼此连接并且机械应变不同的两个半导体层引起。 可以通过不同的掺杂或通过在半导体层的沉积期间具有不同大小的沉积温度来设置不同的应变。 接触弹簧特别提供了由半导体材料构成的半导体晶片的接触区域的良好欧姆接触。

公开(公告)号：US08872335B2

公开(公告)日：2014-10-28

申请号：US11781282

申请日：2007-07-23

申请人： Holger Huebner ,  Martin Franosch

发明人： Holger Huebner ,  Martin Franosch

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H05K3/30 ,  H01L23/00 ,  H01L23/498 ,  H05K3/28

CPC分类号： H05K3/305 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83194 ,  H01L2224/8383 ,  H01L2224/83862 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K3/284 ,  H05K2201/10674 ,  H05K2201/10977 ,  H05K2203/0783 ,  H05K2203/306 ,  Y02P70/613 ,  H01L2924/00

摘要： It is proposed a method of manufacturing an electronic system wherein a first substrate comprising first connection elements on a first surface of the first substrate is provided; a second substrate comprising second connection elements on a first surface of the second substrate is provided; a polymer layer is applied to at least one of the two first surfaces; the first connection elements are attached to the second connection elements; and the polymer layer is caused to swell during or after the attachment.

摘要翻译： 提出了一种制造电子系统的方法，其中提供包括在第一基板的第一表面上的第一连接元件的第一基板; 提供包括在第二基板的第一表面上的第二连接元件的第二基板; 将聚合物层施加到两个第一表面中的至少一个上; 第一连接元件附接到第二连接元件; 并且在附着期间或之后使聚合物层膨胀。

公开(公告)号：US08501534B2

公开(公告)日：2013-08-06

申请号：US12174359

申请日：2008-07-16

申请人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

发明人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Bernhard Gebauer

IPC分类号： H01L21/00

CPC分类号： H01L23/498 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/315 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H03H9/1007 ,  H03H9/105 ,  H03H9/1085 ,  H01L2924/014 ,  H01L2224/05099

摘要： A method for housing an electronic component in a device package includes providing a first substrate, wherein the electronic component is arranged in a component area on a first main surface of the first substrate, and wherein first contact pads are arranged outside of the component area, forming an open top frame structure around the component area on the first main surface of the first substrate, providing a second substrate having second contact pads, arranged symmetrically to the first contact pads and electrically and mechanically connecting the first main surface of the first substrate with the first main surface of the second substrate, so that the frame structure and the second substrate from a cavity or recess around the electronic component on the first substrate.

摘要翻译： 一种用于在装置封装中容纳电子部件的方法，包括提供第一基板，其中所述电子部件布置在所述第一基板的第一主表面上的部件区域中，并且其中第一接触焊盘布置在所述部件区域的外部， 在所述第一基板的所述第一主表面上的所述部件区域周围形成开放的顶部框架结构，提供具有第二接触焊盘的第二基板，所述第二接触焊盘对称地布置在所述第一接触焊盘上，并且将所述第一基板的所述第一主表面与 第二基板的第一主表面，使得框架结构和第二基板来自第一基板上的电子部件周围的空腔或凹部。

公开(公告)号：US08319344B2

公开(公告)日：2012-11-27

申请号：US12172373

申请日：2008-07-14

申请人： Klaus-Guenter Oppermann ,  Martin Franosch

发明人： Klaus-Guenter Oppermann ,  Martin Franosch

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/488 ,  H01L21/486 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05599 ,  H01L2224/1131 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00

摘要： A device with contact elements. One embodiment provides an electrical device including a structure defining a main face. The structure includes an array of cavities and an array of overhang regions, each overhang region defining an opening to one of the cavities. The electrical device further includes an array of contact elements, each contact element only partially filling one of the cavities and protruding from the structure over the main face.

摘要翻译： 具有接触元件的设备。 一个实施例提供一种电气设备，其包括限定主面的结构。 该结构包括空腔阵列和突出区域阵列，每个悬出区域限定到一个空腔的开口。 电气装置还包括接触元件的阵列，每个接触元件仅部分地填充其中一个空腔并从主面上的结构突出。

公开(公告)号：US07947552B2

公开(公告)日：2011-05-24

申请号：US12106667

申请日：2008-04-21

申请人： Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

发明人： Herbert Schäfer ,  Martin Franosch ,  Thomas Meister ,  Josef Böck

IPC分类号： H01L21/8238

CPC分类号： H01L21/02639 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661

摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.

摘要翻译： 本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。 在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。 单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。 沉积包括形成两个或更多个子层。 可以为每个单独的子层改变工艺参数以优化沉积特性。