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公开(公告)号：US20140273404A1
公开(公告)日：2014-09-18
申请号：US14091854
申请日：2013-11-27
Applicant: Intermolecular, Inc.
Inventor： Kent Riley Child , Minh Huu Le
IPC: H01L21/02
CPC classification number: H01L21/76864 , H01L21/02005 , H01L21/02104 , H01L21/02172 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/0228 , H01L21/283 , H01L21/28575 , H01L21/3065 , H01L22/12 , H01L22/14 , H01L27/1462 , H01L27/14643 , H01L27/14698 , H01L29/1606 , H01L29/41 , H01L29/66477 , H01L29/66742 , H01L29/778 , H01L29/786
Abstract: In some embodiments, methods are described that allow the processing of a substrate using microwave-based degas systems. The methods allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated. In some embodiments, apparatus are described that allow the investigation of process variables used in microwave-based degas systems to remove adsorbed species from the surface of a substrate. The apparatus allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated.
Abstract translation: 在一些实施例中，描述了允许使用基于微波的脱气系统来处理衬底的方法。 该方法允许调查诸如功率，停留时间，频率，背面冷却气体使用，背面冷却气体流量等的过程变量。 在一些实施方案中，描述了允许研究在基于微波的脱气系统中使用的工艺变量以从基底表面除去吸附物质的装置。 该装置允许研究诸如功率，停留时间，频率，背面冷却气体使用，背面冷却气体流量等的过程变量。
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公开(公告)号：US20140273311A1
公开(公告)日：2014-09-18
申请号：US14105797
申请日：2013-12-13
Applicant: Intermolecular, Inc.
Inventor： Haifan Liang , Jessica Eid , Minh Huu Le , Jeroen Van Duren
CPC classification number: H01L22/12 , H01L31/0322 , H01L31/0749 , H01L2924/0002 , Y02E10/541 , Y02P70/521 , H01L2924/00
Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.
Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。
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33.发明申请SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS INCLUDING A TERNARY ALLOY 有权低合金玻璃生产涂层的系统，方法和装置，包括三次合金公开(公告)号：US20140268316A1
公开(公告)日：2014-09-18
申请号：US14139350
申请日：2013-12-23
Applicant: Intermolecular Inc.
Inventor： Guizhen Zhang , Brent Boyce , Jeremy Cheng , Guowen Ding , Muhammad Imran , Minh Huu Le , Daniel Schweigert , Yongli Xu
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
Abstract translation: 本文公开了用于形成低辐射率面板的系统，方法和装置，其可以包括衬底和形成在衬底上的反射层。 低发射率面板还可以包括在反射层上形成的顶部电介质层，使得反射层形成在顶部电介质层和衬底之间。 顶部介电层可以包括三元金属氧化物，例如锌锡氧化铝。 顶部电介质层也可以包括铝。 铝的浓度可以在约1原子％至15原子％之间或约2原子％至10原子％之间。 顶部电介质层中锌与锡的原子比可以在约0.67至约1.5之间或约0.9至约1.1之间。
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34.发明申请公开(公告)号：US20140170308A1
公开(公告)日：2014-06-19
申请号：US13713899
申请日：2012-12-13
Applicant: INTERMOLECULAR INC.
Inventor： Nikhil Kalyankar , Richard Blacker , Minh Huu Le , Mark Lewis , Liang Liang
IPC: B05D5/06
CPC classification number: G02B1/115
Abstract: Embodiments provided herein describe antireflective coatings and methods for forming antireflective coatings. A substrate is provided. A first antireflective layer is formed over the substrate. The first antireflective layer has a first refractive index. A second antireflective layer is formed on the first antireflective layer. The second antireflective layer has a second refractive index. The first antireflective layer and the second antireflective layer jointly form an antireflective coating. The antireflective coating is graded such that the antireflective coating comprises at least three sub-layers, each of the at least three sub-layers having a unique refractive index.
Abstract translation: 本文提供的实施方案描述了用于形成抗反射涂层的抗反射涂层和方法。 提供基板。 在衬底上形成第一抗反射层。 第一抗反射层具有第一折射率。 在第一抗反射层上形成第二抗反射层。 第二抗反射层具有第二折射率。 第一抗反射层和第二抗反射层共同形成抗反射涂层。 抗反射涂层被分级，使得抗反射涂层包含至少三个子层，至少三个子层中的每一个具有独特的折射率。
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35.发明申请Electrochromic Device with Improved Transparent Conductor and Method for Forming the Same 审中-公开具有改进的透明导体的电致变色装置及其形成方法公开(公告)号：US20140092462A1
公开(公告)日：2014-04-03
申请号：US14102768
申请日：2013-12-11
Applicant: Intermolecular, Inc.
Inventor： Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC: G02F1/155
CPC classification number: G02F1/155
Abstract: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
Abstract translation: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。
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Patent Agency Ranking
36.发明授权公开(公告)号：US09518319B2
公开(公告)日：2016-12-13
申请号：US14203182
申请日：2014-03-10
Applicant: Intermolecular Inc. , Guardian Industries Corp.
Inventor： Guowen Ding , Jeremy Cheng , Tong Ju , Minh Huu Le , Daniel Schweigert , Zhi-Wen Sun , Yongli Xu , Guizhen Zhang
IPC: B32B15/04 , B32B17/06 , C23C14/08 , G02F1/09 , B29D11/00 , G02B5/26 , C03C17/36 , C23C14/14 , E06B9/24
CPC classification number: G02B5/208 , B29D11/00865 , C03C17/36 , C03C17/3626 , C03C17/3639 , C03C17/3644 , C03C17/366 , C03C17/3681 , C03C23/007 , C03C2217/43 , C03C2217/48 , C03C2218/154 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/22 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02B5/26 , G02F1/091 , G02F2001/094 , Y10T428/24975 , Y10T428/265
Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. A first dielectric layer is disposed over a substrate and includes a bi-metal oxide having tin and bismuth or niobium. A seed layer is disposed directly on the first dielectric layer. A reflective layer including silver is disposed directly on the seed layer. A barrier layer is disposed above the reflective layer. The barrier layer includes one of a nickel chromium titanium aluminum alloy or a nickel chromium titanium aluminum oxide. The nickel chromium titanium aluminum alloy or the nickel chromium titanium aluminum oxide includes between about 5% and about 10% by weight nickel, between about 25% and about 30% by weight chromium, between about 30% and about 35% by weight titanium, and between about 30% and about 35% by weight aluminum.
Abstract translation: 本文公开了用于形成低发射率面板的系统，方法和装置。 第一电介质层设置在衬底上并且包括具有锡和铋或铌的双金属氧化物。 种子层直接设置在第一介电层上。 包括银的反射层直接设置在种子层上。 阻挡层设置在反射层上。 阻挡层包括镍铬钛铝合金或镍铬钛氧化铝中的一种。 镍铬钛铝合金或镍铬钛铝氧化物包括约5重量％至约10重量％的镍，约25重量％至约30重量％的铬，约30重量％至约35重量％的钛， 和约30重量％至约35重量％的铝。
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37.发明授权公开(公告)号：US09466499B2
公开(公告)日：2016-10-11
申请号：US14142121
申请日：2013-12-27
Applicant: Intermolecular, Inc.
Inventor： Jeroen Van Duren , Minh Huu Le , Minh Anh Nguyen , Sandeep Nijhawan
IPC: B05D5/06 , H01L21/30 , B08B3/04 , G11C13/00 , H01L27/24 , C23C14/08 , C23C14/22 , C23C14/34 , H01L21/02 , H01L21/66 , H01L45/00 , H01L21/306 , H01L21/67 , C23C18/16 , C25D17/02 , B01J19/00
CPC classification number: H01L21/30 , B01J19/0046 , B01J2219/00283 , B01J2219/00286 , B01J2219/00301 , B01J2219/00313 , B01J2219/0038 , B01J2219/00382 , B01J2219/00416 , B01J2219/00418 , B01J2219/00527 , B01J2219/00585 , B08B3/04 , C23C14/08 , C23C14/22 , C23C14/34 , C23C18/1619 , C23C18/1682 , C25D17/02 , G11C13/0004 , H01L21/02104 , H01L21/30604 , H01L21/67051 , H01L21/67057 , H01L21/6719 , H01L22/10 , H01L22/12 , H01L22/14 , H01L27/2463 , H01L45/1608
Abstract: A substrate having a plurality of site-isolated regions defined thereon is provided. A first electrochromic material, or a first electrochromic device stack, is formed above a first of the plurality of site-isolated regions using a first set of processing conditions. A second electrochromic material, or a second electrochromic device stack, is formed above a second of the plurality of site-isolated regions using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.
Abstract translation: 提供了具有限定在其上的多个位置隔离区域的基板。 使用第一组处理条件在多个位置隔离区域的第一个上方形成第一电致变色材料或第一电致变色器件堆叠。 使用第二组处理条件在多个位置隔离区域的第二个上方形成第二电致变色材料或第二电致变色器件堆叠。 第二组处理条件与第一组处理条件不同。
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38.发明授权Low-e panels with ternary metal oxide dielectric layer and method for forming the same 有权具有三元金属氧化物介电层的低e面板及其形成方法公开(公告)号：US09315414B2
公开(公告)日：2016-04-19
申请号：US14701053
申请日：2015-04-30
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Jingyu Lao , Minh Huu Le , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun
CPC classification number: C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/21 , C03C2217/228 , C03C2217/23 , C03C2217/26 , C03C2217/281
Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.
Abstract translation: 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧化物层。 金属氧化物层包括第一元件，第二元件和第三元件。 在透明基板上形成反射层。 第一元素可以包括锡或锌。 第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。 金属氧化物层也可以包括氮。
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公开(公告)号：US09296651B2
公开(公告)日：2016-03-29
申请号：US14299341
申请日：2014-06-09
Inventor： Mohd Fadzli Anwar Hassan , Richard Blacker , Guowen Ding , Muhammad Imran , Jingyu Lao , Minh Huu Le , Yiwei Lu , Zhi-Wen Wen Sun
CPC classification number: C03C17/366 , C03C17/2453 , C03C17/36 , C03C17/3618 , C03C17/3642 , C23C14/08 , C23C28/32 , C23C28/345 , H01B3/10
Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.
Abstract translation: 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。
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40.发明申请Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride 有权具有薄金属层的氧化物作为P型和N型氮化镓的透明欧姆接触公开(公告)号：US20160013367A1
公开(公告)日：2016-01-14
申请号：US14330616
申请日：2014-07-14
Applicant: Intermolecular, Inc.
Inventor： Jianhua Hu , Heng-Kai Hsu , Minh Huu Le , Sandeep Nijhawan , Teresa B. Sapirman
CPC classification number: H01L33/42 , H01L33/0075 , H01L33/0095 , H01L33/32 , H01L2933/0016
Abstract: Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5 nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.
Abstract translation: 通过用薄（0.1-5nm）导电金属层的透明氧化物退火层，形成功函数为4.1和4.7eV的III-V半导体可用作欧姆接触的透明导电层。 当退火期间层间相互扩散时，一些导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡，氧化锌和至多5重量％的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例，可以调整透明导电层的功函数以使接触的半导体匹配。
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