公开(公告)号：US20100117226A1

公开(公告)日：2010-05-13

申请号：US12267244

申请日：2008-11-07

申请人： Ku-Feng YANG ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu

发明人： Ku-Feng YANG ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Hung-Jung Tu

IPC分类号： H01L21/50 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/10 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A method for fabricating stacked wafers is provided. In one embodiment, the method comprises providing a wafer having a chip side and a non-chip side, the chip side comprising a plurality of semiconductor chips. A plurality of dies is provided, each of the die bonded to one of the plurality of semiconductor chips. The chip side of the wafer and the plurality of dies are encapsulated with a protecting material. The non-chip side of the wafer is thinned to an intended thickness. The wafer is then diced to separate the wafer into individual semiconductor packages.

摘要翻译： 提供了一种用于制造堆叠晶片的方法。 在一个实施例中，该方法包括提供具有芯片侧和非芯片侧的晶片，芯片侧包括多个半导体芯片。 提供多个管芯，每个管芯接合到多个半导体芯片中的一个。 晶片的芯片侧和多个管芯被保护材料封装。 晶片的非芯片侧被薄化到预期的厚度。 然后切割晶片以将晶片分离成单独的半导体封装。

公开(公告)号：US20100068866A1

公开(公告)日：2010-03-18

申请号：US12539374

申请日：2009-08-11

申请人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L21/768

CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

摘要： A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.

摘要翻译： 形成电路结构的方法包括提供基板; 在基板上形成凹部; 在所述基板上形成掩模层，其中所述掩模层覆盖所述基板的非凹部，所述凹部通过所述掩模层中的开口暴露; 在所述凹部中的所述基板的暴露部分上形成缓冲/成核层; 以及从所述凹部生长第III族V族化合物半导体材料，直到从所述凹部生长的所述III-V族化合物半导体材料的部分相互连接形成连续的III-V族化合物半导体层。

公开(公告)号：US20100059779A1

公开(公告)日：2010-03-11

申请号：US12547428

申请日：2009-08-25

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/20

摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。 嵌入式元件嵌入LED结构的一层或多层内。 在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。 在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。 另外的导电层可以形成在LED结构的上层和嵌入元件上。

公开(公告)号：US20100038661A1

公开(公告)日：2010-02-18

申请号：US12269497

申请日：2008-11-12

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/16 ,  H01L33/0079 ,  H01L33/10

摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。 反射结构由非金属材料形成。 在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。 在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。 在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。 反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

公开(公告)号：US20090267105A1

公开(公告)日：2009-10-29

申请号：US12235269

申请日：2008-09-22

申请人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/005 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405

摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

摘要翻译： 提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。 顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

公开(公告)号：US20080034766A1

公开(公告)日：2008-02-14

申请号：US11503275

申请日：2006-08-14

申请人： Kuo-Liang Weng ,  Wen-Chih Chiou

发明人： Kuo-Liang Weng ,  Wen-Chih Chiou

IPC分类号： F25D17/04 ,  F25B49/00

CPC分类号： F24F11/30 ,  F24F11/62 ,  F24F11/65 ,  F24F2221/38

摘要： A method for controlling selection of air conditioning (A/C) environmental modes according to user's requirements to provide a most comfortable A/C environment includes at least the following steps: establishing setting value parameters of control conditions for various environmental modes; selecting a use environmental mode; getting detection values of the control conditions of an A/C environment; comparing the setting values of the control conditions of the selected environmental mode with the detection values and sending out control commands; and operating an A/C equipment according to the control commands. Therefore users can select a corresponding A/C environmental mode according to individual requirements. Through selection of the environmental mode and operation control of the A/C equipment, optimal setting value parameters matching with various environmental modes suitable to individual users can be obtained. The personalized setting value parameters can be downloaded from a personal information device to other A/C equipment equipped with a common communication protocol so that control of personalized comfort and energy saving can be accomplished in different building spaces.

摘要翻译： 一种用于根据用户要求控制空调（A / C）环境模式选择以提供最舒适的空调环境的方法至少包括以下步骤：为各种环境模式建立控制条件的设定值参数; 选择使用环境模式; 获取A / C环境控制条件的检测值; 将所选择的环境模式的控制条件的设置值与检测值进行比较并发送控制命令; 并根据控制命令操作A / C设备。 因此用户可以根据个人要求选择相应的A / C环境模式。 通过选择A / C设备的环境模式和运行控制，可以获得与个人用户适应的各种环境模式匹配的最优设定值参数。 个性化设置值参数可以从个人信息设备下载到配备有通用通信协议的其他A / C设备，从而可以在不同的建筑空间中实现个性化舒适度和节能的控制。

公开(公告)号：US20070296073A1

公开(公告)日：2007-12-27

申请号：US11426734

申请日：2006-06-27

申请人： Weng-Jin Wu ,  Wen-Chih Chiou

发明人： Weng-Jin Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/02 ,  H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15747 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/83

摘要： A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises a metal-to-metal bond and a non-metal-to-non-metal bond.

摘要翻译： 三维集成电路结构包括至少第一和第二器件，每个器件包括衬底和形成在衬底上的器件层，第一和第二器件以堆叠结合在一起，其中第一和第二器件之间的结合包括 金属对金属键和非金属对非金属键。

公开(公告)号：US07105446B2

公开(公告)日：2006-09-12

申请号：US10656585

申请日：2003-09-04

申请人： Chia-Che Chuang ,  Wen-Chih Chiou ,  Hsin-Hsien Lu ,  Liang-Guang Chen

发明人： Chia-Che Chuang ,  Wen-Chih Chiou ,  Hsin-Hsien Lu ,  Liang-Guang Chen

IPC分类号： B24B7/00

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B49/16

摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.

摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。

公开(公告)号：US07091126B2

公开(公告)日：2006-08-15

申请号：US10422443

申请日：2003-04-24

申请人： Han-Hsin Kuo ,  Hung-Wen Su ,  Wen-Chih Chiou ,  Tsu Shih ,  Hsien-Ming Lee

发明人： Han-Hsin Kuo ,  Hung-Wen Su ,  Wen-Chih Chiou ,  Tsu Shih ,  Hsien-Ming Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/76886 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/7684

摘要： An improvement in a copper damascene process is disclosed. The improvement comprises the step of projecting an electron beam on to a chemical mechanically polished material surface having copper filled etched trenches at a known angle of incidence with respect to the material surface for a known period of time, the electron beam having a beamwidth substantially covering the material surface and a known intensity.

摘要翻译： 披露了铜镶嵌工艺的改进。 该改进包括将电子束投射到具有铜填充的蚀刻沟槽的化学机械抛光的材料表面上的步骤，其具有相对于材料表面已知的入射角已知的时间段，电子束具有基本覆盖的波束宽度 材料表面和已知的强度。

公开(公告)号：US20050051266A1

公开(公告)日：2005-03-10

申请号：US10656585

申请日：2003-09-04

申请人： Chia-Che Chuang ,  Wen-Chih Chiou ,  Hsin-Hsien Lu ,  Liang-Guang Chen

发明人： Chia-Che Chuang ,  Wen-Chih Chiou ,  Hsin-Hsien Lu ,  Liang-Guang Chen

IPC分类号： B24B37/04 ,  B24B49/16 ,  B24B53/00 ,  C23F1/00

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B49/16

摘要： An apparatus and method suitable for the pre-conditioning of a polishing pad on a CMP apparatus prior to the polishing of production wafers on the apparatus. The apparatus includes a pre-conditioning arm on which is mounted an ingot of suitable material. In use, the ingot is pressed against the polishing surface of the rotating polishing pad for a selected period of time to increase the temperature of the polishing surface by friction. The pre-conditioned polishing pad facilitates uniform polishing rates of production semiconductor wafers subsequently polished on the apparatus.

摘要翻译： 一种适于在抛光装置上的生产晶片之前对CMP装置上的抛光垫进行预处理的装置和方法。 该装置包括预调节臂，在其上安装合适材料的锭。 在使用中，将铸锭压在旋转的抛光垫的抛光表面上一段选定的时间，以通过摩擦来增加抛光表面的温度。 预处理的抛光垫有助于随后在设备上抛光的生产半导体晶片的均匀抛光速率。