公开(公告)号：US09306565B2

公开(公告)日：2016-04-05

申请号：US14711538

申请日：2015-05-13

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K17/16 ,  H03K19/00 ,  G06F13/40 ,  G11C11/4093 ,  H03K19/0175 ,  G11C11/401 ,  G11C11/419 ,  G11C16/26 ,  G11C11/41 ,  G11C11/4063 ,  G11C11/413 ,  G11C11/417 ,  G11C16/06 ,  G11C16/32

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: A non-volatile memory device determines, based at least partly on a first multi-bit device address received via a signaling interface and an incoming chip-select signal, whether the device is to participate in a memory access transaction by receiving or outputting data via an I/O node of the signaling interface. Based at least in part on that determination, on-die termination circuitry within the non-volatile memory device switchably couples or decouples a termination resistance between the I/O node and a supply voltage node during a data transmission phase of the memory access transaction.

Abstract translation: 至少部分地基于经由信令接口和输入芯片选择信号接收到的第一多位设备地址来确定设备是否通过接收或输出数据来参与存储器访问事务，非易失性存储器设备 信令接口的I / O节点。 至少部分地基于该确定，在存储器访问事务的数据传输阶段期间，非易失性存储器件内的片上终端电路可切换地将I / O节点和电源电压节点之间的终端电阻耦合或去耦。

公开(公告)号：US09304568B2

公开(公告)日：2016-04-05

申请号：US14351456

申请日：2012-10-11

Applicant: Rambus Inc.

Inventor： Yu Chang ,  Lei Luo ,  Kyung Suk Oh

IPC: H04B1/04 ,  G06F1/32 ,  G06F1/30

CPC classification number: G06F1/32 ,  G06F1/30 ,  G06F1/3203 ,  G06F1/3237 ,  Y02D10/128

Abstract: Disclosed embodiments relate to a system that changes transmitter and/or receiver settings to deal with reliability issues caused by a predetermined event, such as a change in a power state or a clock start event. One embodiment uses a first setting while operating a transmitter during a normal operating mode, and a second setting while operating the transmitter during a transient period following the predetermined event. A second embodiment uses similar first and second settings in a receiver, or in both a transmitter and a receiver employed on one side of a bidirectional link The first and second settings can be associated with different swing voltages, edge rates, equalizations and/or impedances.

Abstract translation: 公开的实施例涉及改变发射机和/或接收机设置以处理由诸如功率状态或时钟启动事件的改变等预定事件引起的可靠性问题的系统。 一个实施例在正常操作模式期间操作发射机时使用第一设置，以及在预定事件之后的过渡期间操作发射机时的第二设置。 第二实施例在接收机中使用类似的第一和第二设置，或在双向链路的一侧采用的发射机和接收机两者中。第一和第二设置可以与不同的摆动电压，边缘速率，均衡和/或阻抗相关联 。

公开(公告)号：US20150332746A1

公开(公告)日：2015-11-19

申请号：US14813028

申请日：2015-07-29

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C8/12 ,  G11C8/18 ,  G11C5/02

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

Abstract translation: 描述了包括可编程命令和地址（CA）接口和/或可编程数据接口的存储器件。 在操作模式下，两个或多个CA接口可能处于活动状态。 在另一操作模式中，至少一个但不是全部的CA接口可能是活动的。 在操作模式下，所有数据接口都可能处于活动状态。 在另一种操作模式中，至少一个但不是全部的数据接口可能是活动的。 存储器装置可以包括用于选择：操作模式的电路; 操作模式中的子模式; 一个或多个CA接口作为活动CA接口; 来自多个活动CA接口的主CA接口; 和/或一个或多个数据接口作为活动数据接口。 电路可以基于一个或多个寄存器中的一个或多个位和/或在一个或多个引脚上接收到的一个或多个信号来执行这些选择。

公开(公告)号：US20150249451A1

公开(公告)日：2015-09-03

申请号：US14712763

申请日：2015-05-14

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G11C11/4063 ,  G11C11/413 ,  H03K19/0175

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: An identifier value stored within a programmable register of a memory device is compared with a selector address received, together with a memory access command, via a signaling interface having at least one I/O node coupled to a bidirectional signaling line. On-die termination circuitry is transitioned between first and second states or maintained in one or the other of the first and second states based, at least in part, on whether the selector address matches the identifier value, with transition to the first state including switchably coupling a first termination resistance between the I/O node and a supply voltage line.

Abstract translation: 存储在存储器件的可编程寄存器中的标识符值与经由具有耦合到双向信令线的至少一个I / O节点的信令接口的存储器访问命令一起被接收的选择器地址进行比较。 至少部分地，至少部分地基于选择器地址是否与标识符值匹配，在第一状态和第二状态之间转换到第一状态或第二状态之间的转换到包括可切换的状态 耦合I / O节点和电源电压线之间的第一终端电阻。

公开(公告)号：US20130307584A1

公开(公告)日：2013-11-21

申请号：US13952393

申请日：2013-07-26

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/0175

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: An integrated circuit memory device stores a plurality of digital values that specify respective termination impedances. The memory device switchably couples respective sets of load elements to a data input/output (I/O) to apply the termination impedances specified by the digital values, including, applying a first termination impedance to the data I/O during an idle state of the memory device, applying a first one of two non-equal termination impedances to the data I/O while the memory device receives write data in a memory write operation and applying a second one of the two non-equal termination impedances to the data I/O while another memory device receives write data in a memory write operation. When outputting read data via the data I/O in a memory read operation, the memory device switchably couples to the data I/O at least a portion of the load elements included in the sets of load elements.

Abstract translation: 集成电路存储器件存储指定相应终端阻抗的多个数字值。 存储器件可将各组负载元件可切换地耦合到数据输入/输出（I / O），以施加由数字值指定的终端阻抗，包括在空闲状态期间向数据I / O施加第一终端阻抗 所述存储器件在所述存储器件在存储器写入操作中接收到写入数据并将所述两个不相等的终端阻抗中的第二个施加到所述数据I上时，将两个不相等的终端阻抗中的第一个施加到所述数据I / O / O，而另一个存储器件在存储器写入操作中接收写入数据。 当在存储器读取操作中经由数据I / O输出读取数据时，存储器件可切换地耦合到包含在负载元件组中的负载元件的至少一部分的数据I / O。

公开(公告)号：US20130194854A1

公开(公告)日：2013-08-01

申请号：US13753360

申请日：2013-01-29

Applicant: RAMBUS INC.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C5/06

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US20240105242A1

公开(公告)日：2024-03-28

申请号：US18214466

申请日：2023-06-26

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C7/22 ,  G11C5/06 ,  G11C11/4063 ,  G11C29/02

CPC classification number: G11C7/22 ,  G11C5/063 ,  G11C11/4063 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028 ,  G11C5/04

Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.

公开(公告)号：US20240096387A1

公开(公告)日：2024-03-21

申请号：US18460413

申请日：2023-09-01

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C8/18 ,  H01L23/00 ,  H01L25/065

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/49 ,  H01L25/0657 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US11882647B2

公开(公告)日：2024-01-23

申请号：US17360896

申请日：2021-06-28

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ralf M. Schmitt ,  Yijiong Feng

IPC: H05K1/02 ,  H01L23/498 ,  H01L23/528 ,  H01B5/02 ,  H01L23/522

CPC classification number: H05K1/0216 ,  H01B5/02 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/5286 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage.

公开(公告)号：US20220345131A1

公开(公告)日：2022-10-27

申请号：US17745435

申请日：2022-05-16

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G06F13/40 ,  G11C11/4093 ,  H03K19/0175 ,  G11C11/401 ,  G11C11/419 ,  G11C16/26 ,  G11C11/41 ,  G11C11/4063 ,  G11C11/413 ,  G11C11/417 ,  G11C16/06 ,  G11C16/32 ,  G06F3/06

Abstract: In an integrated circuit component having a command interface to receive commands, a data interface to receive write data during a write-data reception interval, and first and second registers, control circuitry within the integrated circuit component responds to one or more of the commands by storing within the first register and the second register, respectively, a first control value that specifies a first termination to be applied to the data interface during the write-data reception interval, and a second control value that specifies a second termination to be applied to the data interface after the write-data reception interval transpires.