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公开(公告)号：US09818792B2
公开(公告)日：2017-11-14
申请号：US14400461
申请日：2013-04-19
Applicant: Robert Bosch GmbH
Inventor： Ingo Herrmann , Edda Sommer , Christoph Schelling , Christian Rettig , Mirko Hattass
IPC: H01L27/146 , G01J5/20 , H01L31/028 , G01J5/00 , G01J5/06
CPC classification number: H01L27/14649 , G01J5/20 , G01J2005/0048 , G01J2005/067 , H01L27/14609 , H01L27/14629 , H01L27/14636 , H01L27/1467 , H01L27/14685 , H01L31/028
Abstract: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.
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公开(公告)号：US09632104B2
公开(公告)日：2017-04-25
申请号：US13851392
申请日：2013-03-27
Applicant: Robert Bosch GmbH
Inventor： Hubert Benzel , Christoph Schelling
CPC classification number: G01P3/487 , G01R33/0052 , H01L21/78 , H01L2224/48463 , H01L2224/73265 , H01L2924/10156 , Y10T29/49128
Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.
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公开(公告)号：US09621996B2
公开(公告)日：2017-04-11
申请号：US14793012
申请日：2015-07-07
Applicant: Robert Bosch GmbH
Inventor： Christoph Schelling , Michael Stumber , Benedikt Stein , Theresa Lutz , Rolf Scheben
CPC classification number: H04R9/048 , H04R9/025 , H04R9/08 , H04R31/006 , H04R2201/003 , H04R2209/024 , H04R2307/023
Abstract: A micromechanical sound transducer system and a corresponding manufacturing method, in which the micromechanical sound transducer system includes a substrate having a front side and a back side, the substrate having a through opening extending between the back side and the front side, and a coil configuration on the front side having a coil axis, which runs essentially parallel to the front side, the coil configuration covering the through opening at least partially. Also provided is a magnet device, which is situated so as to allow for an axial magnetic flux to be generated through the coil configuration. The coil configuration has a winding device which has at least first winding sections made from at least one layer of a low-dimensional conductive material, the coil configuration being configured to inductively detect and/or generate sound.
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34.发明授权Method for producing a micromechanical component, and corresponding micromechanical component 有权微机械部件的制造方法以及相应的微机械部件公开(公告)号：US09593012B2
公开(公告)日：2017-03-14
申请号：US14774799
申请日：2014-03-12
Applicant: Robert Bosch GmbH
Inventor： Friedjof Heuck , Christoph Schelling
IPC: B81C1/00
CPC classification number: B81C1/00619 , B81C1/00412 , B81C2201/0177 , B81C2201/0188
Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.
Abstract translation: 微机械部件的制造方法包括向基板提供暴露在结构化区域中的单晶起始层。 结构化区域具有上表面和侧面，其中在上表面上设置适合于促进结构单晶起始层暴露的上表面的硅外延生长的催化剂层，并且不提供催化剂层 在侧面。 该方法还包括在反应气体气氛中使用催化剂层在单晶起始层的上表面上进行选择性外延生长工艺，以形成微机械功能层。
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公开(公告)号：US20170022046A1
公开(公告)日：2017-01-26
申请号：US15212334
申请日：2016-07-18
Applicant: Robert Bosch GmbH
Inventor： Thomas BUCK , Fabian Purkl , Michael Stumber , Rolf Scheben , Benedikt Stein , Christoph Schelling
CPC classification number: B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2207/015 , B81B2207/07 , H04R17/02 , H04R2201/003
Abstract: A MEMS microphone component including at least one sound-pressure-sensitive diaphragm element is formed in the layer structure of the MEMS component, which spans an opening in the layer structure. The diaphragm element is attached via at least one column element in the central area of the opening to the layer structure of the component. The deflections of the diaphragm element are detected with the aid of at least one piezosensitive circuit element, which is implemented in the layer structure of the diaphragm element and is situated in the area of the attachment of the diaphragm element to the column element.
Abstract translation: 在MEMS部件的层结构中形成包括至少一个声压敏膜片元件的MEMS麦克风部件，其跨越层结构中的开口。 隔膜元件通过开口的中心区域中的至少一个柱元件附接到部件的层结构。 借助于至少一个压敏电路元件来检测隔膜元件的偏转，压敏电路元件实现在隔膜元件的层结构中，并且位于隔膜元件附接到柱元件的区域中。
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Patent Agency Ranking
36.发明授权Bonding pad for thermocompression bonding, process for producing a bonding pad and component 有权用于热压接合的接合垫，用于生产焊盘和部件的工艺公开(公告)号：US09281280B2
公开(公告)日：2016-03-08
申请号：US13954649
申请日：2013-07-30
Applicant: Robert Bosch GmbH
Inventor： Christoph Schelling , David Borowsky
CPC classification number: H01L23/564 , B81B7/007 , B81C2201/019 , B81C2203/035 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/11462 , H01L2224/1147 , H01L2224/1181 , H01L2224/11825 , H01L2224/13011 , H01L2224/13022 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13644 , H01L2224/13647 , H01L2224/13664 , H01L2224/13669 , H01L2224/27462 , H01L2224/2747 , H01L2224/2781 , H01L2224/27825 , H01L2224/29011 , H01L2224/29022 , H01L2224/29035 , H01L2224/29124 , H01L2224/29147 , H01L2224/29155 , H01L2224/29166 , H01L2224/29181 , H01L2224/29186 , H01L2224/29562 , H01L2224/2957 , H01L2224/29644 , H01L2224/29647 , H01L2224/29664 , H01L2224/29669 , H01L2224/32227 , H01L2224/73103 , H01L2224/73203 , H01L2224/81193 , H01L2224/81203 , H01L2224/8183 , H01L2224/83193 , H01L2224/83203 , H01L2224/8383 , H01L2224/9211 , H01L2924/00013 , H01L2924/1461 , H05K1/111 , H05K3/4007 , H01L2924/00012 , H01L2924/00014 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/01015 , H01L2924/01042 , H01L2924/01046 , H01L2924/01005 , H01L2924/01027 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/81205
Abstract: A bonding pad for thermocompression bonding of a carrier material to a further carrier material includes a base layer and a top layer. The base layer is made of metal, is deformable, and is connected to the carrier material. The metal is nickel-based. The top layer is metallic and is connected directly to the base layer. The top layer is arranged at least on a side of the base layer which faces away from the carrier material. The top layer has a smaller layer thickness than the base layer. In at least one embodiment, the top layer has a greater oxidation resistance than the base layer.
Abstract translation: 用于将载体材料热压接合到另外的载体材料的接合焊盘包括基层和顶层。 基层由金属制成，可变形，并与载体材料连接。 金属为镍基。 顶层是金属的，并直接连接到基层。 顶层至少布置在基层的远离载体材料的一侧上。 顶层具有比基层更薄的层厚度。 在至少一个实施方案中，顶层具有比基层更高的抗氧化性。
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37.发明申请Component including two semiconductor elements, between which at least two hermetically sealed cavities are formed and method for establishing a corresponding bonding connection between two semiconductor elements 有权包括两个半导体元件的部件，其间形成有至少两个密封腔体，以及用于在两个半导体元件之间建立相应的接合连接的方法公开(公告)号：US20150353347A1
公开(公告)日：2015-12-10
申请号：US14731666
申请日：2015-06-05
Applicant: Robert Bosch GmbH
Inventor： Christoph Schelling , Ralf Reichenbach , Jens Frey , Antoine Puygranier
CPC classification number: B81B7/0041 , B81B2203/0315 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C2203/0118 , B81C2203/0145 , B81C2203/037
Abstract: To implement cavities having different internal pressures in joining two semiconductor elements, at least one of the two element surfaces to be joined is structured, so that at least one circumferential bonding frame area is recessed or elevated in comparison with at least one other circumferential bonding frame area. At least one connecting layer should then be applied to this structured element surface and at least two circumferential bonding frames should be structured out of this connecting layer on different surface levels of the element surface. The topography created in the element surface permits sequential bonding in which multiple cavities between the two elements may be successively hermetically sealed, so that a defined internal pressure prevails in each of the cavities.
Abstract translation: 为了在连接两个半导体元件时实现具有不同内部压力的空腔，要结合的两个元件表面中的至少一个被构造成使得与至少一个其它周向粘结框架相比，至少一个周向粘合框架区域是凹陷或升高的 区。 然后应该将至少一个连接层施加到该结构化元件表面，并且应当在元件表面的不同表面层上从该连接层构造至少两个周向粘结框架。 在元件表面中形成的形状允许顺序键合，其中两个元件之间的多个空腔可以被依次密封，使得在每个空腔中都存在限定的内部压力。
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公开(公告)号：US09066180B2
公开(公告)日：2015-06-23
申请号：US13787272
申请日：2013-03-06
Applicant: Robert Bosch GmbH
Inventor： Jochen Zoellin , Christoph Schelling
CPC classification number: H04R1/08 , H04R19/005 , H04R19/04
Abstract: A micromechanical microphone structure configured as a layered structure includes: a semiconductor substrate; a diaphragm structure having an acoustically active diaphragm which at least partially spans a sound opening in the back side of the substrate and is provided with a movable electrode of a microphone capacitor, which diaphragm structure has openings via which pressure compensation occurs between the back side and the front side of the diaphragm; a stationary acoustically permeable counterelement having vents, which counterelement is situated in the layered structure above the diaphragm and which functions as a carrier for a nonmovable electrode of the microphone capacitor; and at least one ridge-like structural element which is situated at the outer edge area of the diaphragm, and which protrudes from the diaphragm plane into corresponding recesses in an adjoining layer.
Abstract translation: 构造为层状结构的微机械麦克风结构包括：半导体基板; 隔膜结构，其具有至少部分地跨过基板的背面中的声音开口的声学活动隔膜，并且设置有麦克风电容器的可动电极，该隔膜结构具有开口，通过该开口在背面和 隔膜的前侧; 具有排气孔的静止声透射反射体，其中振荡器位于隔膜上方的分层结构中，并且用作麦克风电容器的不可移动电极的载体; 以及至少一个脊状结构元件，其位于隔膜的外边缘区域处，并且从隔膜平面突出到邻接层中的相应凹部中。
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39.发明申请公开(公告)号：US20150137300A1
公开(公告)日：2015-05-21
申请号：US14400461
申请日：2013-04-19
Applicant: Robert Bosch Gmbh
Inventor： Ingo Herrmann , Edda Sommer , Christoph Schelling , Christian Rettig , Mirko Hattass
IPC: H01L27/146 , H01L31/028 , G01J5/20
CPC classification number: H01L27/14649 , G01J5/20 , G01J2005/0048 , G01J2005/067 , H01L27/14609 , H01L27/14629 , H01L27/14636 , H01L27/1467 , H01L27/14685 , H01L31/028
Abstract: An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.
Abstract translation: 红外线传感器装置包括半导体衬底，至少一个在半导体衬底中微机械地形成的传感器元件，以及用于传感器元件的微机械地形成在半导体衬底中的至少一个校准元件。 在传感器元件和校准元件的区域中的半导体衬底上布置有吸收材料。 一个洞穴分别形成在半导体衬底中，基本上位于传感器元件的下方并且基本上在校准元件的下面。 传感器元件和校准元件通过洞穴与半导体衬底的其余部分热电隔离。 红外传感器设备具有高灵敏度，传感器元件的校准功能和高信噪比。
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40.发明申请公开(公告)号：US20150102443A1
公开(公告)日：2015-04-16
申请号：US14400691
申请日：2013-04-12
Applicant: Robert Bosch GmbH
Inventor： Ingo Herrmann , Christoph Schelling
IPC: H01L31/0352 , H01L31/18 , H01L27/144 , H01L31/02 , H01L31/028
CPC classification number: H01L31/035281 , G01J5/0225 , G01J5/023 , G01J5/024 , G01J5/046 , G01J5/20 , H01L27/1443 , H01L27/14649 , H01L31/02005 , H01L31/028 , H01L31/103 , H01L31/1804 , Y02E10/50
Abstract: An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.
Abstract translation: 红外线传感器装置包括形成在半导体衬底中的至少一个传感器元件，限定传感器元件下方和周围的间隙的SOI晶片，以及悬置装置，其将传感器元件悬置在SOI晶片中。 传感器元件基本上布置在悬挂装置下方，从而实现高灵敏度，低热容量，对基板的低热耦合和高图像刷新率。
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