公开(公告)号：US10741590B2

公开(公告)日：2020-08-11

申请号：US16087811

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Masakatsu Ohno ,  Seiji Yasumoto ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56 ,  H01L21/77

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US10586817B2

公开(公告)日：2020-03-10

申请号：US15463487

申请日：2017-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Kuwabara ,  Hiroki Adachi ,  Satoru Idojiri

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/67 ,  H01L21/683

Abstract: A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

公开(公告)号：US10205007B2

公开(公告)日：2019-02-12

申请号：US15486545

申请日：2017-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junpei Yanaka ,  Seiji Yasumoto ,  Masakatsu Ohno ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311

Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 μm or more and 3 μm or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

公开(公告)号：US10181424B2

公开(公告)日：2019-01-15

申请号：US15477528

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Masakatsu Ohno ,  Seiji Yasumoto ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/02 ,  H01L21/47 ,  H01L21/84 ,  H01L21/683 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/00

Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US09995970B2

公开(公告)日：2018-06-12

申请号：US15661602

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yohei Monma ,  Hiroki Adachi ,  Shingo Eguchi ,  Saki Obana ,  Koji Moriya ,  Shuji Fukai

IPC: G02F1/1339 ,  G02F1/1345

CPC classification number: G02F1/1339 ,  G02F1/1345

Abstract: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].

公开(公告)号：US20170322437A1

公开(公告)日：2017-11-09

申请号：US15661602

申请日：2017-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yohei Monma ,  Hiroki Adachi ,  Shingo Eguchi ,  Saki Obana ,  Koji Moriya ,  Shuji Fukai

IPC: G02F1/1339 ,  G02F1/1345

CPC classification number: G02F1/1339 ,  G02F1/1345

Abstract: The object can be achieved by the following structure. A material whose value of fracture toughness is greater than or equal to 1.5 [MPa·m1/2] is used for a base substrate and a counter substrate which hold a liquid crystal material therebetween; a first sealant containing liquid crystal contaminants at less than or equal to 1×10−4 wt % is provided so as be in contact with the liquid crystal material and to surround the liquid crystal material seamlessly; the second sealant is provided to surround the first sealant; and the base substrate and the counter substrate which hold the liquid crystal material therebetween using the first sealant and the second sealant are bonded with a bond strength of greater than or equal to 1 [N/mm2].

公开(公告)号：US09764488B2

公开(公告)日：2017-09-19

申请号：US14468801

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryu Komatsu ,  Kohei Yokoyama ,  Masakatsu Ohno ,  Satoru Idojiri ,  Hisao Ikeda ,  Yasuhiro Jinbo ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Daiki Nakamura

IPC: C03B33/027 ,  C03B33/07 ,  B26D3/08 ,  G02F1/13 ,  B26D3/28 ,  B26F1/38 ,  C03B33/037

CPC classification number: B26D3/282 ,  B26D3/08 ,  B26F1/3826 ,  C03B33/027 ,  C03B33/037 ,  C03B33/07 ,  G02F1/1303 ,  Y02P40/57 ,  Y10T83/0281 ,  Y10T156/1051 ,  Y10T156/1082 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1168 ,  Y10T156/1195 ,  Y10T156/12 ,  Y10T156/1348 ,  Y10T156/1788 ,  Y10T156/1793 ,  Y10T156/1928 ,  Y10T156/1933 ,  Y10T156/1939 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1994

Abstract: A device for forming a separation starting point that allows separation of a surface layer of a processed member to form a remaining portion is provided. A manufacturing device of a stack including a support and a remaining portion of a processed member whose surface layer is separated is provided. The device for forming the separation starting point includes a stage that supports the processed member, a cutter that faces the stage, a head portion that supports the cutter, an arm portion that supports the head portion, and a moving mechanism that relatively moves the cutter to the stage.

公开(公告)号：US09559317B2

公开(公告)日：2017-01-31

申请号：US15145260

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314 ,  H01L27/32

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US09508619B2

公开(公告)日：2016-11-29

申请号：US13912309

申请日：2013-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tomoyuki Aoki ,  Takuya Tsurume ,  Hiroki Adachi ,  Nozomi Horikoshi ,  Hisashi Ohtani

IPC: G06K19/067 ,  H01L23/29 ,  G06K19/077 ,  H01L23/31 ,  H01L23/60 ,  H01L23/66 ,  H01L27/12 ,  H01L27/13 ,  H01L21/56 ,  H01L23/14

CPC classification number: H01L23/29 ,  G06K19/07749 ,  H01L21/563 ,  H01L23/145 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10T428/31522 ,  H01L2924/00

Abstract: A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.

公开(公告)号：US09257560B2

公开(公告)日：2016-02-09

申请号：US14246407

申请日：2014-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi ,  Kayo Kumakura

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/78603 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/78606 ,  H01L2021/775

Abstract: Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.

Abstract translation: 提供了一种具有由裂纹引起的缺陷或具有高生产率的柔性装置的柔性装置。 一种半导体器件，包括：柔性基板上的显示部分，包括晶体管和显示元件; 围绕显示部的半导体层; 以及在晶体管和半导体层上的绝缘层。 当在与柔性基板的表面垂直的方向上观察时，基板的端部与半导体层的端部大致对准，绝缘层的端部位于半导体层的上方。