公开(公告)号：US10044182B2

公开(公告)日：2018-08-07

申请号：US14156761

申请日：2014-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kei Takahashi ,  Jun Koyama ,  Masaaki Hiroki

IPC: H02J7/00 ,  H02J1/00 ,  H01M10/42

Abstract: Degradation of a secondary battery or the like is prevented. A reduction in the capacity of a secondary battery or the like due to charging or discharging is prevented. A secondary battery module in which a secondary battery can be charged in a charging period into which short discharging periods are inserted is provided. A secondary battery module in which a plurality of secondary batteries are connected in parallel, and in a charging period of the secondary batteries, current due to short-time discharging of one secondary battery can be used for charging another secondary battery is provided. To carry out such operation, a secondary battery module includes a plurality of secondary batteries, a DC/DC converter, a switch, and a control circuit.

公开(公告)号：US10043915B2

公开(公告)日：2018-08-07

申请号：US15432977

申请日：2017-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Akiharu Miyanaga ,  Junpei Sugao ,  Hideki Uochi ,  Yasuo Nakamura

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US10043424B2

公开(公告)日：2018-08-07

申请号：US15259360

申请日：2016-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/786 ,  G02F1/1368 ,  G09G3/00 ,  G09G3/34 ,  H04N13/04 ,  H01L27/12 ,  G09G3/20 ,  G09G3/36 ,  H01L21/477 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1333

Abstract: It is an object to provide a specific driving method for reduction in power consumption in displaying a 3D image with field sequential driving. A driving method of a liquid crystal display device is a method in which a stereoscopic image can be perceived with a liquid crystal display device switching an image for a left eye and an image for a right eye to display the image for the left eye or the image for the right eye, and a pair of glasses having a switching circuitry with which the image for the right eye and the image for the left eye are switched in synchronization with display of the image for the left eye or the image for the right eye in order that the left or right eye of a viewer may selectively perceive the image for the left eye or the image for the right eye; the image for the left eye and the image for the right eye are perceived by the left eye or right eye in a mixed color by switching light which is emitted from a backlight portion and which corresponds to a plurality of colors, within a predetermined period, and the light which is emitted from the backlight portion are continuously emitted in accordance with an image signal of each of a plurality of colors which forms the linage for the left eye and the image for the right eye.

公开(公告)号：US10002580B2

公开(公告)日：2018-06-19

申请号：US15299515

申请日：2016-10-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuji Nishijima ,  Seiichi Yoneda ,  Takuro Ohmaru ,  Jun Koyama

IPC: H01L29/10 ,  G09G3/36 ,  H01L33/16 ,  H01L27/12 ,  G09G5/393 ,  G09G5/395 ,  H01L27/105 ,  H01L29/24 ,  H01L29/786 ,  G02F1/1362

CPC classification number: G09G3/3648 ,  G02F2001/136295 ,  G09G3/3614 ,  G09G3/3677 ,  G09G5/393 ,  G09G5/395 ,  G09G2300/0842 ,  G09G2310/0264 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2360/121 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/16

Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

公开(公告)号：US09991887B2

公开(公告)日：2018-06-05

申请号：US15144953

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: H03K3/01 ,  H03K17/30 ,  G11C16/04 ,  H01L29/04 ,  H01L29/786 ,  H01L27/12

CPC classification number: H03K17/302 ,  G11C16/0408 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/78648 ,  H01L29/7869 ,  H03K2217/0018 ,  H03K2217/0036

Abstract: To reduce power consumption, a semiconductor device includes a power source circuit for generating a power source potential, and a power supply control switch for controlling supply of the power source potential from the power source circuit to a back gate of a transistor, and the power supply control switch includes a control transistor for controlling conduction between the power source circuit and the back gate of the transistor by being turned on or off in accordance with a pulse signal that is input into a control terminal of the control transistor. The power source potential is intermittently supplied from the power source circuit to the back gate of the transistor, using the power supply control switch.

公开(公告)号：US09991286B2

公开(公告)日：2018-06-05

申请号：US15370034

申请日：2016-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: H01L27/12 ,  G02F1/1345 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/36

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/023 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

公开(公告)号：US09991265B2

公开(公告)日：2018-06-05

申请号：US15157565

申请日：2016-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L27/11 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  G11C13/00 ,  H01L49/02

CPC classification number: H01L27/1052 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/79 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US09984644B2

公开(公告)日：2018-05-29

申请号：US13949273

申请日：2013-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata ,  Hiroyuki Miyake

IPC: G09G3/36

CPC classification number: G09G3/3696 ,  G09G3/3614 ,  G09G3/3648 ,  G09G2310/065 ,  G09G2310/08 ,  G09G2330/02

Abstract: Power consumed in a liquid crystal display device owing to inversion driving is reduced. A control circuit generates a polarity control signal whose potential level is switched at intervals of two or more frame periods. A data line driver circuit processes an image signal to generate a data signal. The data signal has a polarity corresponding to the potential level of the polarity control signal. The control circuit stops output of the image signal to the data line driver circuit when determining that there is no motion in data of the image signal. The control circuit controls a scan line driver circuit and the data line driver circuit, thereby performing, in response to a change in the potential level of the polarity control signal, rewriting of a display portion at least in one frame period during a period in which the output of the image signal is stopped.

公开(公告)号：US09959822B2

公开(公告)日：2018-05-01

申请号：US15134937

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Ryo Arasawa ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/467 ,  H01L21/477 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: G09G3/3614 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/10 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/08 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

公开(公告)号：US09941343B2

公开(公告)日：2018-04-10

申请号：US15641556

申请日：2017-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC: H01L29/49 ,  H01L27/32 ,  H01L27/146 ,  H01L51/00 ,  H04N3/14 ,  G09G3/3266 ,  G09G3/3258 ,  H01L29/786 ,  H01L27/15 ,  H04N5/225

CPC classification number: H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.