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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    31.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210399134A1

    公开(公告)日：2021-12-23

    申请号：US17285401

    申请日：2019-10-17

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

    LIGHT-EMITTING DEVICE
    34.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180172222A1

    公开(公告)日：2018-06-21

    申请号：US15890396

    申请日：2018-02-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tomoya AOYAMA ,  Yasuhiro JINBO ,  Yoshiharu HIRAKATA ,  Shunpei YAMAZAKI

    IPC: F21L4/00

    Abstract: An object of this invention is to provide a highly portable light-emitting device or a highly browsable light-emitting device. The light-emitting device includes a joint portion, and a plurality of light-emitting units apart from each other with the joint portion positioned therebetween. The joint portion and the light-emitting units are flexible. The joint portion can be bent to a curvature radius smaller than a curvature radius to which the light-emitting unit can be bent. The light-emitting unit is supplied with a signal through a side not adjacent to the joint portion or is supplied with a signal by wireless communication.

    DISPLAY DEVICE
    39.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20150323823A1

    公开(公告)日：2015-11-12

    申请号：US14711275

    申请日：2015-05-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Takeshi OSADA ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO

    IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1365

    CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1365 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/78648 ,  Y10T428/24331

    Abstract: A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.

    Abstract translation: 提供了一种可以缩小框架并且显示特性优异的显示装置。 在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极， 开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括 第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。 逆变器电路可以是EDMOS电路。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    40.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250113480A1

    公开(公告)日：2025-04-03

    申请号：US18893067

    申请日：2024-09-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshihiko SAITO ,  Yasuhiro JINBO ,  Shunpei YAMAZAKI

    IPC: H10B12/00

    Abstract: A semiconductor device with a high operation speed is provided. The semiconductor device includes a second oxide semiconductor; a second conductor; a third conductor; a first insulator over the second oxide semiconductor, the second conductor, and the third conductor; a second insulator and a fourth conductor in a first opening portion of the first insulator; and a third insulator and a fifth conductor in a second opening portion of the first insulator. The second oxide semiconductor is formed by removing a region covering the top surface of a columnar insulator from a first oxide semiconductor formed to cover the columnar insulator. The second conductor and the third conductor are formed by sequentially forming a first conductor and a first insulator over the second oxide semiconductor and removing a region overlapping with the second opening portion of the first insulator from the first conductor to expose the second oxide semiconductor. The first opening portion of the first insulator includes a region overlapping with the third conductor and the second oxide semiconductor.

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