公开(公告)号：US08183075B2

公开(公告)日：2012-05-22

申请号：US13137124

申请日：2011-07-21

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US08129729B2

公开(公告)日：2012-03-06

申请号：US12060693

申请日：2008-04-01

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L29/18

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US08026119B2

公开(公告)日：2011-09-27

申请号：US12805958

申请日：2010-08-26

申请人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

发明人： Chang Youn Kim ,  Shiro Sakai ,  Hwa Mok Kim ,  Joon Hee Lee ,  Soo Young Moon ,  Kyoung Wan Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/0079

摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

摘要翻译： 本发明提供一种制造半导体衬底的方法和一种制造发光器件的方法。 该方法包括在基板上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层和金属材料层上形成第二半导体层，在第一半导体层的第一部分形成空隙 在第二半导体层形成期间在金属材料层下面的第一半导体层，以及通过使用化学溶液蚀刻第一半导体层的至少第二部分来将衬底与第二半导体层分离。

公开(公告)号：US20110151647A1

公开(公告)日：2011-06-23

申请号：US12929712

申请日：2011-02-10

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01L21/04

CPC分类号： H01L21/0254 ,  C30B25/02 ,  C30B29/406 ,  H01L29/2003 ,  H01L33/0075

摘要： Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

摘要翻译： 本发明的示例性实施例提供一种制造半导体衬底的方法，该方法包括在衬底上形成第一半导体层，在第一半导体层上形成金属材料层，在第一半导体层上形成第二半导体层， 使用溶液蚀刻所述基板以去除所述金属材料层和所述第一半导体层的一部分，以及在去除所述金属材料层的第一半导体层内形成空腔。

公开(公告)号：US07897982B2

公开(公告)日：2011-03-01

申请号：US12139927

申请日：2008-06-16

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US07067838B1

公开(公告)日：2006-06-27

申请号：US10518148

申请日：2004-04-16

申请人： Hisao Sato ,  Naoki Wada ,  Shiro Sakai ,  Masahiro Kimura

发明人： Hisao Sato ,  Naoki Wada ,  Shiro Sakai ,  Masahiro Kimura

IPC分类号： H01L29/06

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2009 ,  H01S5/222 ,  H01S5/3086 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

摘要： A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer (124); an active layer (129) including an n-type first barrier layer (126), well layers (128), and second barrier layers (130); a p-type block layer (132); and a p-type clad layer (134). By setting the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layers (130), the band gap energy Eg1 of the first barrier layer (126), and the band gap energy Egc of the n-type and the p-type clad layers such that the relationship Egb>Eg2>Eg1≧Egc is satisfied; the carriers can be efficiently confined; and the intensity of the light emission can be increased.

摘要翻译： 采用GaN基半导体的发光装置。 发光装置包括n型覆层（124）; 包括n型第一阻挡层（126），阱层（128）和第二阻挡层（130）的有源层（129）; p型阻挡层（132）; 和p型覆盖层（134）。 通过设定p型阻挡层（132）的带隙能量Egb，第二阻挡层（130）的带隙能量Eg2，第一阻挡层（126）的带隙能量Eg1和 n型和p型覆盖层的带隙能量Egc满足关系式Egb> Eg2> Eg1> = Egc; 载体可以有效地限制; 并且可以增加发光的强度。

公开(公告)号：US07015511B2

公开(公告)日：2006-03-21

申请号：US10184305

申请日：2002-06-27

申请人： Shiro Sakai ,  Tao Wang

发明人： Shiro Sakai ,  Tao Wang

IPC分类号： H01L29/22

CPC分类号： H01S5/323 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01S5/0213 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： For a light emitting device using gallium nitride (GaN), on a substrate are sequentially formed a GaN-based layer, an AlGaN-based layer, and a light emitting layer. To prevent cracks in the AGaN-based layer, the AlGaN-based layer is formed before planarization of the surface of the GaN layer on a surface of the GaN layer which is not planar. For a laser, the AlGaN-based layers serve as clad layers which sandwich the light emitting layer.

公开(公告)号：US06884647B2

公开(公告)日：2005-04-26

申请号：US10102863

申请日：2002-03-21

申请人： Shiro Sakai ,  Yves Lacroix

发明人： Shiro Sakai ,  Yves Lacroix

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L33/22 ,  H01L21/0337 ,  H01L21/3086 ,  H01L33/0095

摘要： In order to provide a method for easily roughening a surface of a semiconductor constituting an LED, a first material 18 and a second material 20 having a property that they are nonuniformly mixed when thermally treated are deposited on a semiconductor 16, the structure is thermally treated, and etching is performed through reactive ion etching in which the etching rate with respect to the first material 18 is slower than the etching rates with respect to the second material 20 and to the semiconductor 16. During this process, a region 22 in which the first material 18 is the primary constituent functions as an etching mask, and a predetermined roughness can be easily formed on the surface of the semiconductor 16.

摘要翻译： 为了提供容易地使构成LED的半导体的表面粗糙化的方法，在半导体16上沉积具有热处理时不均匀混合的特性的第一材料18和第二材料20，将该结构热处理 ，并且通过反应离子蚀刻进行蚀刻，其中相对于第一材料18的蚀刻速率比相对于第二材料20和半导体16的蚀刻速率慢。在该过程中，其中 第一材料18是作为蚀刻掩模的主要成分，并且可以容易地在半导体16的表面上形成预定的粗糙度。

公开(公告)号：US06861270B2

公开(公告)日：2005-03-01

申请号：US10092231

申请日：2002-03-06

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： C30B29/38 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01S5/323 ,  H01S5/343 ,  H01L27/15 ,  H01L31/12

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/08

摘要： A method for manufacturing a GaN compound semiconductor which can improve light emitting efficiency even when dislocations are present. An n type AlGaN layer, a undoped AlGaN layer, and a p type AlGaN layer are laminated on a substrate to obtain a double hetero structure. When the undoped AlGaN layer is formed, droplets of Ga or Al are formed on the n type AlGaN layer. The compositional ratio of Ga and Al in the undoped AlGaN layer varies due to the presence of the droplets, creating a spatial fluctuation in the band gap. Because of the spatial fluctuation in the band gap, the percentage of luminous recombinations of electrons and holes is increased.

摘要翻译： 即使存在位错也能够提高发光效率的GaN化合物半导体的制造方法。 将n型AlGaN层，未掺杂的AlGaN层和p型AlGaN层层叠在基板上，得到双异质结构。 当形成未掺杂的AlGaN层时，在n型AlGaN层上形成Ga或Al的液滴。 未掺杂的AlGaN层中的Ga和Al的组成比由于液滴的存在而变化，导致带隙中的空间波动。 由于带隙中的空间波动，电子和空穴的发光复合的百分比增加。

公开(公告)号：US20050031768A1

公开(公告)日：2005-02-10

申请号：US10895318

申请日：2004-07-21

申请人： Shiro Sakai ,  Makoto Sakai ,  Hisao Tanaka ,  Toshio Kon ,  Kenji Tsukazaki

发明人： Shiro Sakai ,  Makoto Sakai ,  Hisao Tanaka ,  Toshio Kon ,  Kenji Tsukazaki

IPC分类号： A23D9/007 ,  A23L27/10 ,  A23L27/18 ,  C07C331/22 ,  C07C331/24 ,  C07C331/28 ,  C11B9/02 ,  C12P7/22 ,  C12P11/00 ,  C12P13/00 ,  C11B1/00

CPC分类号： C07C331/22 ,  C07C331/24 ,  C11B9/02 ,  C12P7/22 ,  C12P11/00 ,  C12P13/00

摘要： Yellow or oriental mustard seed can be fractionated to produce allyl isothiocyanate and p-hydroxybenzyl isothiocyanate, along with prepared mustard products, mustard protein and dietary fiber. Processes for the production of these various fractions from mustard seed stock are disclosed. The seed stock is comminuted with water to yield an activated slurry in which the enzyme myrosinase hydrolyses and deteriorates glycosinolates in the seed stock to isothiocyanates. Remaining slurry can then be sterilized and further conventionally processed to yield improved finished mustard products.

摘要翻译： 黄瓜或东方芥菜种子可以分馏以产生异硫氰酸烯丙酯和异硫氰酸对羟基苄酯，以及芥子产品，芥子蛋白和膳食纤维。 公开了从芥菜种子原料生产这些各种级分的方法。 用水粉碎种子原料以产生活化的浆料，其中酶黑芥子酶水解并将种子中的糖苷变性降解为异硫氰酸酯。 然后将剩余的浆料灭菌，并进一步常规加工，以得到改良的成品芥末产品。